Damascene process for chemically vapor depositing titanium nitride and copper metal layer

A chemical vapor phase, copper metal technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low deposition rate and poor quality, and achieve low process stability, simple process, and good adhesion Effect

Inactive Publication Date: 2003-06-25
SHANGHAI HUA HONG GROUP +1
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Problems solved by technology

The usual method of depositing Cu thin films is to use Cu-containing organics, such as (CF 3 COCHCF 3 CO) 2 Cu, with H 2 Or Ar gas is carried into the CVD system, although (CF 3 COCHCF 3 CO) 2 Cu can be

Method used

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Experimental program
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Embodiment Construction

[0020] 1. Using He 2 Carrying Ti-containing chemical substance TDMA, under the condition of low vacuum 1.5Torr, TiN film is deposited by thermal decomposition. Deposition temperature is 450C, deposition time is 15 seconds, TDMAT flow rate is 225sccm, He 2 The flow rate is 275sccm, N 2 The flow rate is 300sccm.

[0021] 2. In situ H 2 -N 2Radio frequency plasma treatment reduces the content of impurities such as carbon, oxygen, and hydrogen in the CVD-deposited TiN film, reduces the resistivity, makes the TiN grain grow uniformly, densifies the TiN film, and improves the uniformity of film thickness. The processing vacuum is 1.5 Torr, and the time is 35 seconds.

[0022] 3. Processes 1 and 2 are used cyclically to deposit 35 nm of TiN barrier material.

[0023] 4. Chemical vapor deposition of Cu metal film: using Cu-containing organic Cu I (hafc)(vtms) thermally decomposes at a temperature of 180°C and a vacuum of 1-3 Torr to form a pure Cu film. The chemical reaction fo...

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Abstract

The present invention relates to Damascene process of chemically vapor depositing TiN layer and Cu metal layer. Inside one multiple-cavity vacuum equipment, TiN diffusing barrier layer and Cu metal film are first deposited successively and then heat annealed quickly in H2-N2 atmosphere to obtain TiSiN barrier layer and Cu metal film with homogeneously distributed crystal size and resistance. The present invention has excellent filling property and form retention, good adhesion to insulating medium and stable and simple technological process. When combined with chemical and mechanical polishing of Cu, may be manufactured Cu metal Damascene interconnection wiring structure suitable for deep submicron superlarge scale ICs.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and specifically relates to the use of chemical vapor deposition (CVD) TiSiN barrier layer and Cu metal film, and in N 2 and H 2 In the atmosphere, the CVD deposited Cu metal film is annealed, combined with the Cu chemical mechanical polishing (CMP) process, to realize the Cu damascene interconnection structure. Background technique [0002] With the continuous reduction of integrated circuit design rules, the line width of the feature size has been reduced to 0.10 microns, and the trend of continuous downward reduction is maintained. On the other hand, the density of devices in integrated circuits continues to increase, the number of metal wiring layers is increasing, and the number of wiring layers in logic circuits has reached 7-8 layers. Due to the increase of the resistance of the metal interconnection line itself and its parasitic capacita...

Claims

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Application Information

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IPC IPC(8): H01L21/283H01L21/285H01L21/31H01L21/443H01L21/469
Inventor 徐小诚缪炳有
Owner SHANGHAI HUA HONG GROUP
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