Supercharge Your Innovation With Domain-Expert AI Agents!

Absorbing compounds for spin-on glass anti-reflective coatings for photolithography

A technology for spinning glass and compounds, which is applied in the field of light-absorbing spinning glass materials and absorbing compounds, and can solve problems such as increasing processing complexity.

Inactive Publication Date: 2003-09-17
HONEYWELL INT INC
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additional chemical vapor deposition methods increase processing complexity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Absorbing compounds for spin-on glass anti-reflective coatings for photolithography
  • Absorbing compounds for spin-on glass anti-reflective coatings for photolithography

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Synthesis of 9-Anthracenemethoxy-methyldiethoxysilane

[0031] In a 3-liter flask, mix 92.37 g (0.419 mol) methyltriacetoxysilane (MTAS), 87.36 g (0.419 mol) 9-anthracenemethanol, 38.56 g (0.839 mol) ethanol, 595.51 g (10.20 mol) acetone . The solution was stirred under nitrogen atmosphere for 7 days. The solution was degassed to remove the acetic acid by-product.

Embodiment 2

[0033] Synthesis of Absorbent SOG Containing 9-Anthracenemethoxymethyldiethoxysilane

[0034] In a 1-liter flask, 297 g (4.798 mol) of isopropanol, 148 g (2.55 gmol) of acetone, 123 g (0.593 mol) of TEOS, 77 g (0.432 mol) of MTEOS, 200 g of 9-anthracenemethoxy -Methyldiethoxysilane, produced in Example 1, 2.61 grams (0.009) mol rosenic acid, 10 grams (0.024mol) 2-hydroxy-4 (3-triethoxysilyl propoxy) - Benzophenone, 0.09 grams (0.0004 mol) of 2,6-dihydroxyanthraquinone, 0.6 grams of 1.0 M nitric acid and 72 grams (3.716 mol) of deionized water were mixed. The flask was refluxed for 4 hours. 43 grams (0.590 mol) of butanol were added to the solution. The solution was filtered. The solution was dispensed, followed by thickness spinning at 3000 rpm for 20 seconds and baking at 80°C and 180°C for 1 minute respectively. Optical properties were measured with a N & K Technology Model 1200 analyzer. The film thickness was 2801 angstroms. At 248 nm, the refractive index (n) is 1.4...

Embodiment 3

[0036] Synthesis of 9-Anthracenemethoxy-triethoxysilane

[0037] In a 3 liter flask, 110.73 grams (0.419 mol) of tetraacetoxysilane (TAS), 87.36 grams (0.419 mol) of 9-anthracenemethanol, 57.98 grams (1.2585 mol) of ethanol, 595.51 grams (10.20 mol) of acetone were mixed. The solution was stirred under nitrogen atmosphere for 7 days. The solution was degassed to remove the acetic acid by-product.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

As the organic light-absorbing compound, an absorbing ether-like compound comprising a silicon ethoxy, silicon diethoxy or silicon triethoxy species linked to a naphthalene or anthracene chromophore through an oxygen bond is used. The absorbing ether-like compound is incorporated into the spin-on-glass material to provide an antireflective coating material for deep ultraviolet lithography. The method for the synthesis of this light-absorbing ether compound is based on the reaction of an alcohol-substituted chromophore with an acetoxy silicon compound in the presence of an alcohol. Also provided is a method of making an absorbent spin-on-glass material comprising an absorbent etheroid compound.

Description

technical field [0001] The present invention relates generally to light-absorbing spin-on-glass materials, and more particularly to absorbing compounds that can be incorporated into spin-on-glass materials for use as antireflection layers in photolithography, and methods of producing the absorbing compounds. Background of the invention [0002] To meet demands for faster performance, the feature sizes of integrated circuit device components continue to decrease. The fabrication of devices with smaller component sizes poses new challenges in many of the methods commonly used in semiconductor fabrication. One of the most important of these fabrication methods is photolithography. [0003] It has long been recognized that line width deviations in patterns produced by photolithography can arise from optical interference of light reflected from underlying layers on semiconductor wafers. Variations in photoresist thickness due to the surface morphology of the underlying layer al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C03C17/30C07F7/18C08K5/5415C08L83/05C09D4/00C09D183/04H01L21/027
CPCC03C17/30C07F7/1804C09D4/00C09D183/04Y10T428/31663C08G77/04C08L2666/44C08G77/42
Inventor T·巴德温M·里奇J·德拉格H·-J·吴R·斯佩尔
Owner HONEYWELL INT INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com