High dielectric coefficient gate dielectric material hafnium aluminate fil mand preparing method thereof

A technology with high dielectric coefficient and gate dielectric, applied in the field of microelectronic materials, can solve problems such as high grain boundary leakage current, large oxygen diffusivity, and reduce device capacitance, and achieve high thermodynamic stability
CN1471138AInactive Publication Date: 2004-01-28NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV
Publication Date
2004-01-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

Through ball mill mixing, the powder of hafnium oxide and alumina is cold pressed to piece. Then, ceramics target of hafnium aluminate is made through agglomeration under high temperature. Based on pulse laser deposit (PLD) technique, under high vacuum and low oxygen partial pressure, peeling off ceramic target of hafnium aluminate and generating laser plasma deposited on silicon substrate to produce amorphous hafnium nitronic aluminate film. The film possesses the features of high thermodynamic stability, higher dielectric coefficient and low leakage current. The performance index of the product reaches advanced stage of international similar products and meets practical application requirement of MOSFET with not high power consumption.
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Description

1. Technical field

[0001] The invention belongs to the field of microelectronic materials, and in particular relates to a high-permittivity gate dielectric material applied in a metal-oxide-semiconductor field effect transistor (MOSFET) and a preparation method thereof. 2. Background technology

[0002] In silicon-based semiconductor integrated circuits, metal-oxide-semiconductor field effect transistors (MOSFETs) are the basic units that constitute memory units, microprocessors, and logic circuits. Its volume is directly related to the integration degree of VLSI. According to the famous Moore's Law, the integration level of integrated circuits will double every 18 months. According to the prediction of the International Semiconductor Technology Roadmap (ITRS) published by the International Semiconductor Industry Association in 1999, by 2005, the 0.1μm photolithography technology will become mature, and the SiO2 used as the gate dielectric film in the corresponding MOSFET ...

Claims

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