Photoresist developer compositions

A technology of photoresist and developer, which is applied in the fields of optics, photography, and optomechanical equipment, and can solve the problems that the permeability of inorganic developer compositions is not always satisfactory and residues are left

Active Publication Date: 2004-06-09
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to its components, however, the permeability of inorganic developer compositions is not always satisfactory and residues may be left after the development step

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0014] Preparation of sample: A conventional color resist composition (manufacturer: Fuji Film Arch Co., Ltd., trade name: CR-8131L, CR-8130L, CB-8140L, CR-8100L, CB-8100L) was rotated Coated on a chrome black matrix deposited on LCD glass to make a resist layer with a thickness of 1.5 μm. The resist layer was prebaked at 90° C. for 90 seconds using a hotplate, and a mask was placed on the resist layer. Electron beam exposure (200mJ / cm 2 ) of the resist layer to prepare samples.

[0015] Preparation of the developer composition: as shown in Table 1, prepare the developer compositions in Examples 1-8 and Comparative Examples 1-4 by adjusting the amount and type of inorganic alkaline compound, organic solvent, surfactant, and water .

[0016] (a) Inorganic basic compound

(b) Organic solvents

(c) Surfactant

(d) water

Reality

apply

example

KOH

NaOH

Na 2 CO 3

MeOH

EtOH

EGEE

DPGME

POEO

ES

wate...

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PUM

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Abstract

A photoresist developer composition is provided, to improve miscibility and to suppress or minimize the generation of residue after development, thereby enhancing the precision of photoresist pattern. The photoresist developer composition comprises 1-10 wt% of an inorganic alkali; 0.1-3.0 wt% of an organic solvent; 1.0-20.0 wt% of a surfactant; and 67-97.9 wt% of water. Preferably the inorganic alkali is selected from the group consisting of KOH, NaOH, sodium phosphate, sodium silicate, sodium carbonate, sodium bicarbonate and their mixtures; the organic solvent is selected from the group consisting of methanol, ethanol, 1-propanol, 2-propanol, butanol, diacetone alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropyl glycol monomethyl ether, dipropyl glycol monoethyl ether and their mixtures; and the surfactant is a mixture of a nonionic surfactant and an anionic surfactant.

Description

technical field [0001] The invention relates to a photoresist developer composition, in particular to a photoresist for forming a photoresist pattern in thin film transistor liquid crystal display (TFT-LCD) or semiconductor preparation developer composition. Background technique [0002] Microcircuit patterns such as TFT-LCD circuits, semiconductor integrated circuits, etc. are generally formed by the following steps. First, by coating a resist composition including a binder, a photopolymerizable monomer, an initiator, an organic solvent, etc. on an insulating layer or a conductive metal layer formed on a substrate, and baking the coated resist resist composition to form a resist layer. Then, a mask with a predetermined circuit pattern is placed on the resist layer, and the resist layer is irradiated with UV rays, E-beams, or electron beams such as X-rays. The exposed and non-exposed areas have different solubilities in the developer composition. Therefore, a desired res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/32G02F1/136H01L21/00
CPCG03F7/004G03F7/0397G03F7/32G03F7/322G03F7/425
Inventor 朴赞硕金吉来朴春镐金敬娥
Owner DONGJIN SEMICHEM CO LTD
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