Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Soakage reversibly variable temperature-responsive copolymer film preparation method

A temperature-responsive polymer film technology, applied in the field of temperature-responsive polymer film preparation, can solve the problems of difficult control of molecular structure, inability to achieve reversible control of superhydrophilicity and superhydrophobicity, and achieve excellent wettability The effect of reversible transformation characteristics, simple preparation method and wide applicability

Inactive Publication Date: 2005-01-26
INST OF CHEM CHINESE ACAD OF SCI
View PDF0 Cites 37 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has its limitations: it is limited to the grafting of hydrophobic and hydrophilic polymers to the surface of the needle-like substrate, and it needs to be induced by hydrophilic and hydrophobic solvents.
However, the molecular structure prepared by this method is not easy to control, and the reversible regulation between the superhydrophilicity and superhydrophobicity of the material surface cannot be realized.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Soakage reversibly variable temperature-responsive copolymer film preparation method
  • Soakage reversibly variable temperature-responsive copolymer film preparation method
  • Soakage reversibly variable temperature-responsive copolymer film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] 1) Soak silicon wafers with chromic acid lotion to remove surface organic impurities; then rinse with deionized water; soak in 0.1N NaOH solution for 2 minutes; 0.1N HNO 3 Soak in solution for 10 minutes.

[0049] 2) The above treated silicon wafer was immersed in 100 mL of toluene solution of 15 wt % trimethoxysilylpropylamine, and heated to reflux for 6 hours. Then rinse with toluene and dichloromethane, and blow dry with nitrogen.

[0050] 3) The above-mentioned treated silicon chip was immersed in 100 mL of chloroform solution of 2 wt % pyridine, 5 mL of 2-bromo-2-methylpropionyl bromide was added, reacted in an ice-water bath for 1 hour, and then continued to react at room temperature for 12 hours. After the reaction, rinse with acetone and dry with nitrogen.

[0051] 4) The above treated silicon wafer was immersed in 200mL of water / methanol (volume ratio 1:5) containing 0.03g CuBr and 0.5mL diethylenetriamine (PMDETA) of 20wt% isopropylacrylamide (NIPAAM). solu...

Embodiment 2

[0054] 1) Soak silicon wafers in chromic acid lotion to remove surface organic impurities; then rinse with deionization; blow dry with nitrogen.

[0055] 2) Horizontally and vertically etch the above-mentioned treated silicon wafer with a laser, the laser etching width is 6 microns, the depth is 5 microns, and the parallel spacing of the laser beams is 8 microns (ie, the etching groove spacing); then use 0.1N NaOH solution Soak for 2 minutes; 0.1N HNO 3 Soak in solution for 10 minutes.

[0056] 3) The above treated silicon wafer was immersed in 100 mL of toluene solution of 15 wt % trimethoxysilylpropylamine, and heated to reflux for 6 hours. Then rinse with toluene and dichloromethane, and blow dry with nitrogen.

[0057] 4) The above-mentioned treated silicon chip was immersed in 100 mL of dichloromethane solution of 2 wt % pyridine, 5 mL of 2-bromo-2-methylpropionyl bromide was added, and reacted in an ice-water bath for 1 hour, then continued to react at room temperature...

Embodiment 3

[0064] 1) Soak silicon wafers in chromic acid lotion to remove surface organic impurities; then rinse with deionization; blow dry with nitrogen.

[0065] 2) Horizontally and vertically etch the above-mentioned silicon wafer with laser, the laser etching width is 6 microns, the depth is 5 microns, and the parallel interval of laser beams is 18 microns (ie, the etching groove spacing); then use 0.1N NaOH solution Soak for 2 minutes; 0.1N HNO 3 Soak in solution for 10 minutes.

[0066] 3) The above-mentioned treated silicon wafer was immersed in 100 mL of toluene solution of 10 wt % trimethoxysilbutylamine, and heated to reflux for 6 hours. Then rinse with toluene and dichloromethane, and blow dry with nitrogen.

[0067] 4) The above-mentioned treated silicon chip was immersed in 100 mL of ethyl acetate solution of 2 wt % pyridine, 5 mL of 2-bromo-2-methylpropionyl chloride was added, reacted in an ice-water bath for 1 hour, and then continued to react at room temperature for 1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a process for preparing temperature-responsive polymeric thin films which consists of, carrying out free radical polymerization reaction through surface triggering atom transition on smooth surfaces or rough surfaces with micrometer or nano structure, thus making the material surface have reversible soakage.

Description

technical field [0001] The invention relates to a method for preparing a temperature-responsive polymer film, in particular to a method for initiating atom transfer radical polymerization on a smooth or rough surface with a micron or nanostructure, so that the surface of the material has wettability and reversible transformation (Hydrophilic, hydrophobic, superhydrophilic, superhydrophobic) temperature-responsive polymer films. technical background [0002] The wettability of material surfaces is a very active research frontier in the world. By changing the roughness and chemical structure of the material surface, realizing the hydrophilicity, superhydrophilicity or hydrophobicity, superhydrophobicity of the material surface has important scientific significance in both theoretical research and practical application. Jiang Lei, a researcher at the Institute of Chemistry, Chinese Academy of Sciences, used the design idea of ​​binary synergistic interf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C08F120/56C08J5/18
Inventor 王国杰孙涛垒江雷
Owner INST OF CHEM CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com