Wind speed sensor based on micro mechanic working and its producing method

A wind speed sensor and micromachining technology, which is applied in the direction of measuring fluid velocity using thermal variables, can solve the problems of large thermal coupling, affect sensor sensitivity, and high cost, and achieve the effects of small lateral heat transfer, improved sensitivity, and simple packaging.

Active Publication Date: 2005-03-02
SOUTHEAST UNIV
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Problems solved by technology

In these structures, the direct thermal coupling between the heating unit and the temperature measuring unit is large, which seriously affects the sensitivity of the sensor; in addition, as a thermal flow sensor, the chip needs to be in direct contact with the fluid, and at the same time, chip com

Method used

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  • Wind speed sensor based on micro mechanic working and its producing method
  • Wind speed sensor based on micro mechanic working and its producing method
  • Wind speed sensor based on micro mechanic working and its producing method

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Embodiment Construction

[0022] The invention is a miniature wind speed sensor sensitive to wind speed and wind direction signals. The entire structure of the sensor is integrated on the silicon substrate 5, and the central part is composed of four rectangular heating strips 2 forming a square, and there are bulk silicon temperature measuring resistors 1 symmetrically distributed outside each heating strip 2, and the bulk silicon temperature measuring resistors 1 and the heating bar 2 are provided with an inner ICP groove 31, and an outer ICP groove 32 is arranged outside the bulk silicon temperature measuring resistor 1, and the bulk silicon temperature measuring resistor 1 passes through the narrow silicon 4 with very narrow ends and the entire silicon substrate 5 connection; the inner ICP groove 31 between the heating strip 2 and the bulk silicon temperature measuring resistor 1 serves as thermal isolation. An oxide layer 51 is provided on the upper surface of the silicon substrate 5, and a layer o...

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Abstract

The invention is a wind speed sensor based on micro mechanical process and its manufacturing method, which uses silicon resistance as temperature measuring unit, the invention is a wind speed sensor and its manufacturing method with silicon substrate conduction. The whole structure of the sensor is integrated on the substrate, the manufacturing method is: a) plants a layer of oxidization layer on the silicon substrate, photoetching and corroding the internal ICP slots and external ICP slots, and injects the edge area of the heating bar; b) deposits a layer of multi-crystal silicon on the silicon, and forms a multi-crystal resistance through photoetching; c) photoetchs the injecting area; injects phosphor with high density, which is used as the contacting area of the substrate and the silicon induce; d) carries on low temperature silicon dioxide deposition, and corrodes out the inducing line contact window; e) deposits the aluminum, photoetchs the aluminum inducer, and corrodes aluminum; f) deposits passivation layer; g) photoetchs IPC slots, and carries on ICP etching; h) thins the back surface, and releases out the structure of the silicon resistance.

Description

technical field [0001] The invention is an integrated wind speed sensor for measuring wind speed and wind direction, in particular, a wind speed sensor using bulk silicon resistance as a temperature measuring unit and a silicon substrate for heat transfer and a manufacturing method thereof. Background technique [0002] Anemometers have a wide range of applications in meteorology, transportation, and outdoor work. Traditional wind speed measurement is realized by mechanical means, but it is bulky, costly, consumes a lot of power, and is easy to wear. With the development of integrated circuit technology, the heat flow wind speed sensor using silicon material overcomes the shortcomings of large volume and high power consumption. This silicon thermal flow sensor is generally based on MEMS (micro-machining) technology, using platinum resistance as the heating and temperature measurement unit; or using CMOS (complementary metal-oxide-silicon) technol...

Claims

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Application Information

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IPC IPC(8): G01P5/12
Inventor 高冬晖秦明黄庆安
Owner SOUTHEAST UNIV
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