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Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method

An anti-ferromagnetic, multi-layer film technology, applied in the direction of magnetic objects, inductors/transformers/magnets, magnetic materials, etc., can solve problems such as easy to be corroded, high coercive force, unsuitable for spin valves and magnetic tunnels , to achieve the effect of good corrosion resistance, ideal resistivity and ideal thermal stability

Inactive Publication Date: 2005-03-02
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the exchange bias system based on oxide antiferromagnetic materials has high resistivity; its pinning field is too small; FeMn and IrMn have relatively large pinning fields, but are easily corroded; chemically ordered antiferromagnetic The pinning field and corrosion resistance of the magnetic phase NiMn and PtMn are basically suitable, but compared with the pinning field, the coercive force is often relatively large
Moreover, for all Mn-based antiferromagnets, the diffusion of Mn atoms is difficult to stop, which will seriously destroy the spin valve, especially the overall performance of the magnetic tunnel junction (document J.Appl.Phys.87, 2469 (2000) and J. Appl. Phys. 89, 6907 (2000))
In addition Cr 0.7 Al 0.3 (Document Appl.Phys.Lett.70, 2915 (1997)) is also used as a pinning material, but its pinning field is too small to be used in spin valves and magnetic tunnel junctions

Method used

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  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method
  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method
  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method

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Embodiment 1

[0030] Such as figure 2 Shown, the structure of ferromagnetic / antiferromagnetic multilayer film pinning material is: glass substrate 1, buffer layer Ta 2, its thickness is 5nm; Ferromagnetic layer Co 0.9 Fe 0.1 3, the thickness of which is 12nm; antiferromagnetic multilayer film [Pt / Cr] 4, wherein the thickness of Pt is 1nm, the thickness of Cr is 0.8nm, the total thickness is about 30nm; and the protective layer Ta 5, the thickness of which is 5nm. The thickness or composition of each layer above is the value when the sample is vacuum deposited or before annealing. image 3 It is the sample preparation state of Example 1 of the present invention and the hysteresis loop measured with a vibrating sample magnetometer after vacuum annealing at 350°C for 5 hours. The coercive force is about 20 Oersted in the preparation state, and there is no nail After annealing, it produces a pinning field of 72 Oersted, and the coercive force only increases slightly, with a value of 28 Oerst...

Embodiment 2

[0032] The structure of the ferromagnetic / antiferromagnetic multilayer pinning system is: substrate Si 1, buffer layer (Ni 0.8 Fe 0.2 ) x Cr 1-x 2, where 0.50.9 Fe 0.1 3. The thickness is 10nm; the antiferromagnetic multilayer film [Pt / Cr] 4, wherein the thickness of Pt is 1nm, the thickness of Cr is 0.8nm, the total thickness is about 30nm; and the protective layer Ta 5, the thickness is 5nm. The thickness or composition of each layer above is the value when the sample is vacuum deposited or before annealing.

Embodiment 3

[0034] The structure of the ferromagnetic / antiferromagnetic multilayer film pinning system is as follows: substrate Si1, buffer layer Ta2, its thickness is 5nm; ferromagnetic layer Co3, its thickness is 10nm; antiferromagnetic layer Cr 0.5 Pt 0.5 4, whose thickness is 20 nm, and the protective layer Ta 5, whose thickness is 5 nm. The thickness or composition of each layer above is the value when the sample is vacuum deposited or before annealing.

[0035] The following takes Example 1 as an example to illustrate the preparation method of the ferromagnetic / CrPt antiferromagnetic multilayer film pinning system of the present invention. The steps of preparing the Co-Fe ferromagnetic / Pt-Cr antiferromagnetic multilayer film pinning system are as follows: firstly, vacuum deposition method is adopted, such as magnetron sputtering method, and the background vacuum degree is better than 10 -5 Pa, and the deposition working pressure under the inert atmosphere is 0.5Pa, the buffer lay...

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Abstract

The invention discloses a ferromagnetic / antiferromagnetic multilayer film drilling system and its preparing method, including a substrate, a buffer layer, a drilled ferromagnetic layer, a antiferromagnetic layer and a protective layer. The preparing method: depositing the three layers in turn on the substrate and vacuum-annealing so as to obtain it. It adopts CLPt as the antiferromagnetic drilling material, which has a relative great drilling effect on the ferromagnetic layer, and it is more important that it extremely improves its thermal stability and anticorrosive ability and largely reduces atomic dispersion between the ferromagnetic / antiferromagnetic layers. Its preparing process is simple and its property is stable.

Description

technical field [0001] The invention relates to a key element in a magnetoelectronic device: a ferromagnetic / antiferromagnetic multilayer film pinning system, which can be directly applied to spin valves, magnetic tunnel junctions and even magnetic random access memories ( MRAM). [0002] The invention also relates to a preparation method of a ferromagnetic / antiferromagnetic multilayer film pinning system. Background technique [0003] The ferromagnetic / antiferromagnetic multilayer film system is one of the basic components of spin valves and magnetic tunnel junctions. Its main function is to make the ferromagnetic layer act as a magnetic The reference layer of (document Phys. Rev. B 43, 1297 (1991) and IEEE Circuits Devices Mag. 18, 17 (2002)). From the perspective of practical application, the antiferromagnetic requirements of this system are: it can produce relatively large coupling strength, relatively high blocking temperature, relatively thin thickness, good corrosio...

Claims

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Application Information

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IPC IPC(8): H01F1/00H01F41/00
Inventor 代波蔡建旺赖武彦
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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