Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method

An anti-ferromagnetic, multi-layer film technology, applied in the direction of magnetic objects, inductors/transformers/magnets, magnetic materials, etc., can solve problems such as easy to be corroded, high coercive force, unsuitable for spin valves and magnetic tunnels , to achieve the effect of good corrosion resistance, ideal resistivity and ideal thermal stability

Inactive Publication Date: 2005-03-02
INST OF PHYSICS - CHINESE ACAD OF SCI
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Problems solved by technology

Although the exchange bias system based on oxide antiferromagnetic materials has high resistivity; its pinning field is too small; FeMn and IrMn have relatively large pinning fields, but are easily corroded; chemically ordered antiferromagnetic The pinning field and corrosion resistance of the magnetic phase NiMn and PtMn are basically suitable, but compared with the pinning field, the coercive force is often relatively large
Moreover, for all Mn-b

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  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method
  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method
  • Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method

Examples

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Example Embodiment

[0029] Example 1:

[0030] Such as figure 2 As shown, the structure of the ferromagnetic / anti-ferromagnetic multilayer film pinning material is: glass substrate 1, buffer layer Ta 2, with a thickness of 5 nm; ferromagnetic layer Co 0.9 Fe 0.1 3. Its thickness is 12nm; the antiferromagnetic layer multilayer film [Pt / Cr]4, wherein the thickness of Pt is 1nm, the thickness of Cr is 0.8nm, and the total thickness is about 30nm; and the protective layer Ta5, the thickness of which is 5nm. The thickness or composition of each layer mentioned above is the value when the sample is vacuum deposited or before annealing. image 3 This is the sample preparation state of Example 1 of the present invention and the hysteresis loop measured with a vibrating sample magnetometer after vacuum annealing at 350°C for 5 hours. The coercive force is about 20 Oersted in the preparation state, without nails. After annealing, it produces a pinning field of 72 Oersteds, and the coercive force only increase...

Example Embodiment

[0031] Example 2:

[0032] The structure of the ferromagnetic / antiferromagnetic multilayer film pinning system is: substrate Si 1, buffer layer (Ni 0.8 Fe 0.2 ) x Cr 1-x 2. Where 0.50.9 Fe 0.1 3. Its thickness is 10nm; the antiferromagnetic layer multilayer film [Pt / Cr]4, wherein the thickness of Pt is 1nm, the thickness of Cr is 0.8nm, and the total thickness is about 30nm; and the protective layer Ta5, the thickness of which is 5nm. The thickness or composition of each layer mentioned above is the value when the sample is vacuum deposited or before annealing.

Example Embodiment

[0033] Example 3:

[0034] The structure of the ferromagnetic / antiferromagnetic multilayer film pinning system is as follows: substrate Si1, buffer layer Ta 2 with a thickness of 5nm; ferromagnetic layer Co 3 with a thickness of 10nm; antiferromagnetic layer Cr 0.5 Pt 0.5 4. Its thickness is 20 nm, and the protective layer Ta 5 has a thickness of 5 nm. The thickness or composition of each layer mentioned above is the value when the sample is vacuum deposited or before annealing.

[0035] In the following, Example 1 is taken as an example to illustrate the preparation method of the ferromagnetic / CrPt antiferromagnetic multilayer film pinning system of the present invention. The steps to prepare the Co-Fe ferromagnetic / Pt-Cr antiferromagnetic multilayer film pinning system are as follows: First, the vacuum deposition method, such as the magnetron sputtering method, is used, and the background vacuum degree is better than 10 -5 Pa, and the deposition working pressure in an inert atmo...

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Abstract

The invention discloses a ferromagnetic/antiferromagnetic multilayer film drilling system and its preparing method, including a substrate, a buffer layer, a drilled ferromagnetic layer, a antiferromagnetic layer and a protective layer. The preparing method: depositing the three layers in turn on the substrate and vacuum-annealing so as to obtain it. It adopts CLPt as the antiferromagnetic drilling material, which has a relative great drilling effect on the ferromagnetic layer, and it is more important that it extremely improves its thermal stability and anticorrosive ability and largely reduces atomic dispersion between the ferromagnetic/antiferromagnetic layers. Its preparing process is simple and its property is stable.

Description

technical field [0001] The invention relates to a key element in a magnetoelectronic device: a ferromagnetic / antiferromagnetic multilayer film pinning system, which can be directly applied to spin valves, magnetic tunnel junctions and even magnetic random access memories ( MRAM). [0002] The invention also relates to a preparation method of a ferromagnetic / antiferromagnetic multilayer film pinning system. Background technique [0003] The ferromagnetic / antiferromagnetic multilayer film system is one of the basic components of spin valves and magnetic tunnel junctions. Its main function is to make the ferromagnetic layer act as a magnetic The reference layer of (document Phys. Rev. B 43, 1297 (1991) and IEEE Circuits Devices Mag. 18, 17 (2002)). From the perspective of practical application, the antiferromagnetic requirements of this system are: it can produce relatively large coupling strength, relatively high blocking temperature, relatively thin thickness, good corrosio...

Claims

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Application Information

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IPC IPC(8): H01F1/00H01F41/00
Inventor 代波蔡建旺赖武彦
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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