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Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same

一种制造方法、铪膜的技术，应用在化学仪器和方法、金属材料涂层工艺、半导体/固态器件制造等方向，能够解决再现性差、成膜温度高等问题，达到抑制气化特性的效果

Inactive Publication Date: 2005-09-07
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Hf(OtBu) 4 Although it can be formed at low temperature, it has the problem of poor reproducibility. Hf(DPM) 4 Although it has stability, it has the disadvantage of high film-forming temperature

Method used

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  • Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
  • Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
  • Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0115] First, commercially available hafnium tetrachloride and toluene containing more than 1000 ppm of zirconium element were prepared respectively, and hafnium tetrachloride was suspended in toluene to prepare a suspension. In addition, prepare 3-chloro-hexafluoroacetylacetone and 3-chloro-2,4-pentanedione respectively, mix these compounds at a weight ratio of 1:10, and then dilute the mixture with diethyl ether as a solvent to prepare a diluent , so that 80% of the total ratio is solvent. The suspension and the diluent are mixed to form a reaction solution of hafnium tetrachloride.

[0116] Then, a toluene solvent is added to alkali metals such as lithium metal, sodium metal or potassium metal, and heated to 50° C. to react. The obtained supernatant reaction solution was slowly added dropwise to the hafnium tetrachloride reaction solution under ice cooling. Next, the hafnium tetrachloride reaction liquid to which the supernatant reaction liquid was added dropwise was filt...

Embodiment 2

[0120] Except repeatedly carrying out 15 petroleum ether extractions, prepare Hf (Et 2 N) 4 . The obtained Hf(Et 2 N) 4 The Zr content contained in is measured by UV-VIS absorption spectrometry and is 100 ppm. The Zr content is 100ppm of Hf (Et 2 N) 4 As a hafnium-containing film-forming material.

Embodiment 3

[0122] Except repeatedly carrying out 18 petroleum ether extractions, prepare Hf (E t N) 4 . The obtained Hf(Et 2 N) 4 The Zr content contained in is measured by UV-VIS absorption spectrometry and is 50 ppm. The Zr content is 50ppm of Hf (Et 2 N) 4 As a hafnium-containing film-forming material.

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Abstract

A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

Description

technical field [0001] The present invention relates to a hafnium-containing film forming material suitable as a raw material for manufacturing a hafnium-containing film, a method for manufacturing the material, and a method for manufacturing a hafnium-containing film made of the material. The hafnium-containing film can be used in conventional media Electric thin film, optical thin film, catalyst thin film, solid electrolyte thin film, etc. In more detail, the present invention relates to a method suitable for manufacturing Si-O-Hf thin films, HfO by Metal Organic Chemical Vapor Deposition (hereinafter referred to as MOCVD) 2 A hafnium-containing film-forming material that is a raw material of a hafnium-containing thin film such as a thin film, a method for producing the material, and a method for producing a hafnium-containing film made of the material. Background technique [0002] At present, a silicon oxide film is used as a high-dielectric gate insulating film. In rec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C01G25/00C01G27/00C01G27/02C07F7/00H01L21/316
CPCC07F7/006C07F7/003C01G27/00C01G27/02C01G25/00
Inventor 斋笃曾山信幸柳泽明男
Owner MITSUBISHI MATERIALS CORP
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