One-chip silicon-base miniature capacitor microphone and manufacturing method thereof

A micro-capacitor and microphone technology, applied in the field of electro-acoustics, can solve the problems such as the adhesion of the diaphragm and the back plate, the high production cost, the decline in the yield, etc., and achieve the effect of reducing the production accuracy of the process and the requirements of the equipment

Inactive Publication Date: 2005-11-09
FUDAN UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention adopts single crystal silicon material as diaphragm, and there is no patent report at present
In addition, the back plate of some microphones is made on a silicon single wafer. The etching field of the acoustic hole needs to use expensive

Method used

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  • One-chip silicon-base miniature capacitor microphone and manufacturing method thereof
  • One-chip silicon-base miniature capacitor microphone and manufacturing method thereof
  • One-chip silicon-base miniature capacitor microphone and manufacturing method thereof

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Embodiment Construction

[0039] Specific embodiments of the present invention are given below.

[0040] 1. Double-sided thermally grown SiO 2

[0041] 2. Double-sided photolithography to form alignment marks on the front and back sides, see image 3 (1)

[0042] 3. Double-sided thermally grown SiO 2

[0043] 4. Photolithographic JFET N - well and resistive regions of N - trap, see image 3 (2)

[0044] 5. As ion implantation, high temperature chemical treatment, push the surface implanted As ions to the designed well depth

[0045] 6. Photolithography of the gate region and boron diffusion resistance region of the JFET field effect transistor

[0046] 7. Boron diffusion, forming the gate area of ​​the JFET field effect transistor and the boron diffusion resistance R D and R S

[0047] 8. Photolithography of the drain-source region of the JFET field effect transistor

[0048] 9. As ion implantation, high temperature chemical treatment, forming N of the drain and source + contact hole, see...

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Abstract

This invention relates to a new structure single chip silicon-base micro-condenser microphone in which, the vibration film is processed by high elastic mono-crystal silicon film, the back pole plate is made up of PI thick films, the diaphragm electrode and the back electrode are led out by concentrated boron buried electrode, only a metal layer with the thickness greater than 1 mum is processed on the hot-pressed feet, micro-acoustic holes are set on the back pole plate, a JFET source follower is integrated on the front of a mono-crystal silicon substrate forming vibration films to reach the aim of impedance transformation. The mono-crystal silicon film is released by HF vapor phase corroding technology, no adhesion occurs between the vibration film and the back pole plate to increase the rate of product greatly.

Description

technical field [0001] The invention belongs to the field of electroacoustic technology, and in particular relates to a monolithic silicon-based miniature capacitive microphone and a manufacturing method thereof. Background technique [0002] Silicon-based miniature microphones are a research hotspot in the field of electroacoustic technology around the world, and are the direction to replace traditional FEP microphones in the future. Its advantages are: small size, high temperature resistance, suitable for large-scale automated production lines, easy to mass produce, and can also be integrated with ICs to form a microsystem. The diaphragms of existing silicon-based miniature condenser microphones all use materials such as silicon nitride / silicon dioxide composite films, polysilicon / silicon nitride composite films, polysilicon films, and polyimide films. The use of a composite film is mainly due to the fact that the single film material will have tensile or compressive stre...

Claims

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Application Information

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IPC IPC(8): H04R19/04
Inventor 沈绍群夏钟福王丽李军胡绘钧胡宗保冯艺纪新明
Owner FUDAN UNIV
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