Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide

A curable composition and radiation technology, applied in the direction of photosensitive materials, optics, and optomechanical equipment used in optomechanical equipment, to achieve the effect of excellent pattern accuracy

Inactive Publication Date: 2005-11-16
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional insulating films cannot directly form wiring trenches or through-holes. Usually, after patterning a photoresist on the insulating film, dry etchin

Method used

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  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide
  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide
  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0162] Example 1

[0163] In a solution obtained by dissolving 317.9 g of tetraethoxysilane and 247.9 g of methyltriethoxysilane in 1116.7 g of diglyme, the solution was added dropwise over 30 minutes under stirring to prepare 167.5 g of 0.644% by weight nitric acid. After the completion of the dropwise addition, after reacting for 3 hours, part of the ethanol and diglyme produced were distilled off in a warm bath under reduced pressure to obtain 1077.0 g of a polysiloxane solution. To 525.1 g of this polysiloxane solution, add 53.0 g of diglyme, 2.38% by weight of tetramethylammonium nitrate aqueous solution (pH 3.6) and 3.0 g of water, and then at room temperature (25°C) The mixture was stirred and dissolved for 30 minutes to obtain a polysiloxane solution for a radiation curable composition. The weight average molecular weight of the polysiloxane measured by the GPC method was 830. 0.193 g of a photoacid generator (PAI-1001, manufactured by Hari Chemical Co., Ltd.) was blended ...

Example Embodiment

[0165] Example 2

[0166] In a solution of 96.13 g of tetraethoxysilane and 165.44 g of methyltriethoxysilane in 562.99 g of propylene glycol methyl ether acetate, the solution was added dropwise over 5 minutes under stirring to prepare 75.47 g of 0.644% by weight nitric acid. 18.9 g of a 2.38% by weight tetramethylammonium nitrate aqueous solution (pH 3.6) was prepared. After the completion of the dropwise addition, after reacting for 3 hours, part of the ethanol and propylene glycol methyl ether acetate produced were distilled off in a warm bath under reduced pressure to obtain 359.94 g of a polysiloxane solution. Propylene glycol methyl ether acetate was added thereto to obtain 450.02 g of a polysiloxane solution for a radiation curable composition. The weight average molecular weight of the polysiloxane measured by the GPC method was 1110. 0.080 g of a photoacid generator (PAI-101, manufactured by Hikari Chemical Co., Ltd.) was blended with 20.0 g of this polysiloxane solution...

Example Embodiment

[0168] Example 3

[0169] 0.040 g of a photobase generator (NBC-101, manufactured by Shiri Chemical Co., Ltd.) was blended with 10.0 g of the polysiloxane solution for a radiation curable composition obtained in Example 2 to prepare a radiation curable composition. In addition, the usage-amount of (a) component is 20 weight% with respect to the total amount of radiation curable composition. (b) The use amount of the component is 0.4% by weight with respect to the total amount of the radiation curable composition. (d) The use amount of the component is 0.1% by weight with respect to the total amount of the radiation curable composition.

[0170] 2 mL of the above-mentioned radiation curable composition was dropped into the center of a 6-inch silicon wafer, a coating film was formed on the wafer using a spin coating method (rotation at 700 r / min for 30 seconds), and it was dried on a hot plate at 100° C. for 30 seconds. After that, the dried coating film was passed through a mask fo...

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Abstract

PROBLEM TO BE SOLVED: To provide a radiation curable composition for obtaining a hardener superior in pattern precision even when an exposure amount is comparatively small, and to provide its storing method, a cured film forming method, and a pattern forming method.

Description

technical field [0001] The present invention relates to a radiation curable composition, its storage method, its cured film forming method, its pattern forming method, its pattern application method, its electronic element, and its optical waveguide. Background technique [0002] Conventionally, as insulating films used in LSI (Large Scale Integration), PDP (Plasma Display Panels), etc., SiO deposited by CVD has been widely used in view of excellent performance such as heat resistance and electrical reliability. 2 Film, organic SOG (spin-on-glass) film or inorganic SOG film formed by coating method. However, conventional insulating films cannot directly form wiring trenches or through-holes. Usually, a photoresist is patterned on the insulating film, and then dry etching using plasma or wet etching using a chemical solution is performed. The etching process is followed by a resist removal step and a cleaning step to form a pattern. In contrast, if photosensitive properties...

Claims

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Application Information

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IPC IPC(8): G03F7/075
Inventor 樱井治彰阿部浩一
Owner HITACHI CHEM CO LTD
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