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Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide

A curable composition and radiation technology, applied in the direction of photosensitive materials, optics, and optomechanical equipment used in optomechanical equipment, to achieve the effect of excellent pattern accuracy

Inactive Publication Date: 2005-11-16
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional insulating films cannot directly form wiring trenches or through-holes. Usually, after patterning a photoresist on the insulating film, dry etching treatment using plasma or wet etching using chemical solution is performed. Etching process, followed by resist removal process and cleaning process to form a pattern

Method used

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  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide
  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide
  • Radiation-curing composition, method for storing same, method for forming cured film, method for forming pattern, method for using pattern, electronic component, and optical waveguide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0163] To a solution in which 317.9 g of tetraethoxysilane and 247.9 g of methyltriethoxysilane were dissolved in 1116.7 g of diglyme, 167.5 g of nitric acid adjusted to 0.644% by weight was added dropwise over 30 minutes while stirring. After completion of the dropwise addition, the reaction was carried out for 3 hours, and a part of ethanol and diglyme were distilled off in a warm bath under reduced pressure to obtain 1077.0 g of a polysiloxane solution. To 525.1 g of this polysiloxane solution, 53.0 g of diglyme, 2.38% by weight of tetramethylammonium nitrate aqueous solution (pH 3.6) and 3.0 g of water were added. Stirring and dissolution were performed for 30 minutes to obtain a polysiloxane solution for a radiation curable composition. The weight average molecular weight of polysiloxane measured by GPC method was 830. 0.193 g of a photoacid generator (PAI-1001, manufactured by Midori Chemical Co., Ltd.) was mixed with 10.0 g of this polysiloxane solution for a radiation...

Embodiment 2

[0166] In the solution that dissolves 96.13g of tetraethoxysilane and 165.44g of methyltriethoxysilane in 562.99g of propylene glycol methyl ether acetate, 75.47g of nitric acid adjusted to 0.644% by weight and 18.9 g of 2.38 weight% tetramethylammonium nitrate aqueous solution (pH 3.6) was prepared. After completion of the dropwise addition, the reaction was carried out for 3 hours, and a part of ethanol and propylene glycol methyl ether acetate generated were distilled off in a warm bath under reduced pressure to obtain 359.94 g of a polysiloxane solution. Propylene glycol methyl ether acetate was added thereto to obtain 450.02 g of a polysiloxane solution for a radiation curable composition. The weight average molecular weight of the polysiloxane measured by the GPC method was 1110. 0.080 g of a photoacid generator (PAI-101, manufactured by Midori Chemical Co., Ltd.) was mixed with 20.0 g of this polysiloxane solution for a radiation curable composition to prepare a radiat...

Embodiment 3

[0169] 0.040 g of a photobase generator (NBC-101, manufactured by Midori Chemical Co., Ltd.) was mixed with 10.0 g of the polysiloxane solution for a radiation-curable composition obtained in Example 2 to prepare a radiation-curable composition. In addition, the usage-amount of (a) component is 20 weight% with respect to the radiation curable composition whole quantity. (b) The usage-amount of a component is 0.4 weight% with respect to the radiation curable composition whole quantity. (d) The usage-amount of a component is 0.1 weight% with respect to the radiation curable composition whole quantity.

[0170] 2 mL of the radiation-curable composition was dropped at the center of a 6-inch silicon wafer, and a coating film was formed on the wafer by spin coating (700 r / min for 30 seconds), and dried for 30 seconds with a 100° C. hot plate. Thereafter, the dried coating film was passed through a mask for a linear pattern negative film with a minimum line width of 2 μm, and was ex...

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Abstract

PROBLEM TO BE SOLVED: To provide a radiation curable composition for obtaining a hardener superior in pattern precision even when an exposure amount is comparatively small, and to provide its storing method, a cured film forming method, and a pattern forming method.

Description

technical field [0001] The present invention relates to a radiation curable composition, its storage method, its cured film forming method, its pattern forming method, its pattern application method, its electronic element, and its optical waveguide. Background technique [0002] Conventionally, as insulating films used in LSI (Large Scale Integration), PDP (Plasma Display Panels), etc., SiO deposited by CVD has been widely used in view of excellent performance such as heat resistance and electrical reliability. 2 Film, organic SOG (spin-on-glass) film or inorganic SOG film formed by coating method. However, conventional insulating films cannot directly form wiring trenches or through-holes. Usually, a photoresist is patterned on the insulating film, and then dry etching using plasma or wet etching using a chemical solution is performed. The etching process is followed by a resist removal step and a cleaning step to form a pattern. In contrast, if photosensitive properties...

Claims

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Application Information

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IPC IPC(8): G03F7/075
Inventor 樱井治彰阿部浩一
Owner HITACHI CHEM CO LTD
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