Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment

A surface acoustic wave and communication device technology, which is applied in the manufacture/assembly of electrical components, piezoelectric/electrostrictive devices, and the selection of device materials, can solve problems such as increased manufacturing costs, inability to fully improve insulation properties, etc. Effects of preventing pyroelectric damage, preventing deterioration of attenuation characteristics or insulation characteristics outside the passband, and expanding the selection range

Inactive Publication Date: 2006-03-01
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] Therefore, if the conductive layer 59 and the ground electrode of the package 57 are connected through wiring, although the capacitive coupling between the input and output electrode parts of each filter can be reduced to a certain extent, this solution cannot be sufficient. Improve insulation properties
[0026] In addition, in the case of mounting (flip-chip mounting) with the surface on which the IDT electrodes of the piezoelectric substrate is formed to face the main surface of th

Method used

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  • Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
  • Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
  • Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0214] First, on one main surface of a piezoelectric substrate 2 (substrate thickness: 250 μm) formed by a 38.7° Y-cut X-transport lithium tantalate single crystal substrate, a Ti / Al-1 film was formed from the piezoelectric substrate 2 side by sputtering. 4 conductor layers formed by mass % Cu / Ti / Al-1 mass % Cu. The layer thicknesses are 6nm / 209nm / 6nm / 209nm, respectively.

[0215] Next, by photolithography with RIE such as figure 1 This conductive layer is patterned as shown to form a plurality of surface acoustic wave element regions, each of which has a filter region 9 including an IDT electrode 3 , an input electrode portion 5 , and an output electrode portion 6 . The etching gas used at this time is BCl 3 with Cl 2 of mixed gas.

[0216] The electrode finger line width of the comb-shaped electrode forming the IDT electrode 3 and the distance between adjacent electrode fingers are both about 1 μm.

[0217] Next, the semiconductor layer 22 made of silicon to which a tr...

no. 2 Embodiment

[0231] In this embodiment, except that the ring conductor 7 is not provided in the surface acoustic wave element 1, the others are the same as figure 1 Same, but seal construction is different.

[0232] In this example, if Figure 21 As shown in the cross-sectional view, instead of using the annular conductor 7, a sealing structure made of an annular insulator 41 and a covering member 42 for partial protection of the IDT electrode 3 is used to protect the IDT electrode 3, and the surrounding area is covered with an outer coating resin. 34 for protection, providing through-holes reaching from the upper surface of the exterior resin 34 to the input electrode part 5, the output electrode part 6 and the ground electrode part (not shown in the figure), and filling the conductive posts 43 therein as connection electrodes. By adopting such a structure, it is possible to obtain a surface acoustic wave device 40 which is smaller than the case of using the loop conductor 7 .

[0233]...

no. 3 Embodiment

[0239] First, on one main surface of a piezoelectric substrate 2 (substrate thickness: 250 μm) formed by a 38.7° Y-cut X-transport lithium tantalate single crystal substrate, a film of Ti / Al-1 mass is formed from the piezoelectric substrate side by sputtering. 4 conductor layers formed by %Cu / Ti / Al-1 mass % Cu. The film thicknesses are 6nm / 209nm / 6nm / 209nm, respectively.

[0240] Next, by photolithography with RIE such as Figure 4 This conductor layer is patterned as shown to form a plurality of surface acoustic wave device regions, which are respectively formed with the transmission side filter region 12 having the IDT electrode 3, the input electrode portions 5i, 5j, and the output electrode portions 6i, 6j and the reception side filter region 12 and the reception side filter region. device area 13. The etching gas used at this time is BCl 3 with Cl 2 of mixed gas. The line width of the comb-shaped electrodes forming the IDT electrodes 3 and the distance between adjacen...

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Abstract

An IDT electrode 3 , and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2 , and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2 . The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.

Description

technical field [0001] The present invention relates to a surface acoustic wave device (Surface Acoustic Wave Device) with flip-chip structure, especially a surface acoustic wave device with improved attenuation outside the passband, a surface acoustic wave device and a communication device using the surface acoustic wave device . Background technique [0002] In recent years, surface acoustic wave filters are used in various communication devices. [0003] With the development of higher frequency and higher functionality of communication devices, there is an increasing demand for an increase in attenuation outside the band of a surface acoustic wave filter. [0004] A schematic cross-sectional view of the flip-chip structure of a conventional surface acoustic wave device is shown in Figure 25 shown. [0005] Figure 25 Among them, 51 is a piezoelectric substrate, 52 is a ground pad, 53 is a comb-shaped IDT (Inter Digital Transducer) electrode formed on the piezoelectric ...

Claims

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Application Information

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IPC IPC(8): H03H9/25H01L41/09H01L41/18H01L41/22H01L41/312H01L41/39H03H9/145H03H9/72
Inventor 横田裕子伊藤干长峰成彦船见雅之饭冈淳弘
Owner KYOCERA CORP
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