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Method for manufacturing solar cell

A solar cell and manufacturing method technology, applied to high power, can solve the problems of not realizing compensation, not taking into account the impact, not taking into account, etc., to achieve the effects of optimizing design, improving efficiency, and simplifying process

Inactive Publication Date: 2006-03-08
金昊 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology does not take into account the impact on the aluminum back field caused by printing pure silver paste at the small window of the aluminum paste
The compensation effect of trivalent aluminum on the back to pentavalent phosphorus has not been realized at the small window of aluminum paste
In addition, this technology does not take into account that in the firing through silicon nitride film process, the front PN junction needs further design

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The following describes specific implementation schemes in conjunction with the content of the process of the present invention, and further illustrates a method for manufacturing a solar cell of the present invention.

[0023] Use the above-mentioned step one for the previous chemical pretreatment: The semiconductor PN junction manufacturing process is: the temperature of the constant temperature zone is 900 ℃, and the temperature of the constant temperature zone made by the polycrystalline silicon solar cell PN junction is slightly lower than that of the monocrystalline silicon solar cell PN junction. , At 850℃, 5 minutes preheating: nitrogen flow 300ml / min, oxygen 85ml / min, 10 minutes constant source diffusion: nitrogen flow 300ml / min, oxygen 85ml / min, carrying source nitrogen 70ml / min, 20 minutes set Source advancement: 300ml / min nitrogen and 85ml / min oxygen.

[0024]The above steps 3 and 4 are used for inductively coupled plasma peripheral etching and silicon nitride f...

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Abstract

According to production process, the invention includes following six steps: preceding chemical pretreatment; preparing semiconductor PN junction; etching periphery through inductance coupling plasma (ICP); depositing film of silicon nitride; screen printing front electrode and back electrode; metallizing front electrode and back electrode and burning through film of silicon nitride. Silver- aluminum paste is adopted for printing small window of aluminum paste in order to guarantee that the small window also obtains structure of aluminum backfield as well as realizes compensation from trivalent aluminum for quinquevalent phosphor at the small window. The invention optimum designs depth of frontal PN junction of silicon cell in technique for burning through film of silicon nitride. Effect of the invention is that efficiency of solar cell in single crystal silicon reaches to 14.6%, and efficiency of solar cell in polysilicon to 14.0%.

Description

Technical field [0001] The invention relates to solar cell manufacturing technology, in particular to a low-cost, high-efficiency, high-power, large-area solar cell manufacturing method, and belongs to the field of solar energy applications. Background technique [0002] The basis for the exponential growth in the production and sales of crystalline silicon wafer solar cells in the past two decades is the improvement and development of the production technology of crystalline silicon wafer solar cells and the continuous reduction of production costs. [0003] In the existing science and technology magazines and the patent documents of various countries in the world, there are many reports on the process of crystalline solar cells, carefully analyzed, and they are not the same. Each specialized process has its own characteristics and supported technical equipment background and application. In terms of scope, most of the reports are the study of a single process. Through literatur...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 顾箐陈娟娟陈钊李忠金昊
Owner 金昊