Manufacturing method of silicon chip solar battery

A technology of solar cells and manufacturing methods, which is applied to high power, can solve problems such as not taking into account, not realizing the compensation function, not taking into account the impact, etc., and achieve the effects of optimizing design, improving efficiency, and simplifying the process

Inactive Publication Date: 2005-11-09
陈娟娟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology does not take into account the impact on the aluminum back field caused by printing pure silver paste at the small window of the aluminum paste
The compensation effect of divalent aluminum on the back side for pentavalent phosphorus has not been realized at the small window of aluminum paste
In addition, this technology does not take into account that in the firing through silicon nitride film process, the front PN junction needs further design

Method used

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Examples

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Embodiment Construction

[0022] The specific embodiment will be described below in conjunction with the content of the process of the present invention, and the method for manufacturing the silicon wafer solar cell of the present invention will be further described.

[0023] Use the above step 1 for the front chemical pretreatment: the manufacturing process of the semiconductor PN junction is: the temperature in the constant temperature zone is 900 °C, and the temperature in the constant temperature zone for the PN junction of polycrystalline silicon solar cells is slightly lower than the temperature of the PN junction of monocrystalline silicon solar cells. , 850°C, 5 minutes preheating: Nitrogen 300ml / min, Oxygen 85ml / min, constant source diffusion for 10 minutes: Nitrogen 300ml / min, Oxygen 85ml / min, Nitrogen 70ml / min, 20 minutes constant Source propulsion: Nitrogen 300ml / min, oxygen 85ml / min.

[0024]Adopt above-mentioned step 3 and step 4 to carry out inductively coupled plasma peripheral etching ...

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PUM

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Abstract

This invention discloses a process method for a silicon chip solar energy battery including the following six steps: front-channel chemical pretreatment, processing of semiconductor PN junction, etching circumference with ICP, depositing the SiN film, silk-screen printing the front and back electrodes, metallizing the front and back electrodes and burning through the SiN film, among which, AgAl pulp is applied for the printing at the Al pulp small window to ensure to get the structure of Al back field and realizes the compensation of trivalent Al to phosphor at the small window. This invention further optimizes the design to the depth of PN junction of the battery.

Description

technical field [0001] The utility model relates to a solar cell manufacturing technology, in particular to a low-cost, high-efficiency, high-power, large-area silicon chip solar cell manufacturing method, which belongs to the field of solar energy applications. Background technique [0002] The basis for the exponential growth in the output and sales of crystalline silicon wafer solar cells in the past two decades is the improvement and development of crystalline silicon wafer solar cell production technology and the continuous reduction of production costs. [0003] In the existing technical magazines and patent documents of various countries in the world, there are many reports on the process of crystalline solar cells. After careful analysis, they are not the same. Each specialized process has its own characteristics and the background and application of technical equipment that can be supported. Most of the reports are on the research of a single process. After literat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陈娟娟陈钊李忠陈肖金昊陈嘉煜王瑞秀白玉凤
Owner 陈娟娟
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