Coating liquid for forming silicon dioxide serial illinition

A technology of silicon dioxide and coating liquid, which is applied in the manufacturing of coatings, electrical components, semiconductor/solid-state devices, etc., and can solve the problems of reducing the dielectric constant and rising of the silicon dioxide-based film.

Inactive Publication Date: 2006-04-26
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, if the silica-based film formed using the coating solution for forming a silica-based film described in Patent Document 1 is removed in the step of removing the photoresist layer with a stripping solution and applied to the photoresist layer, There is a problem that the reduction of the silicon dioxide-based film and the increase in the dielectric constant are likely to occur when the stripping liquid is contacted in the process of using the stripping liquid after the ashing treatment.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0147] 177.30 g of pure water and 10.6 μl of nitric acid having a concentration of 60 mass % were added to 731.79 g of methyltriethoxysilane, and stirred for 3 hours. Then, it was allowed to react at room temperature for 6 days to obtain a reaction solution containing a reaction product. The weight average molecular weight (Mw) of this reaction product was 1800.

[0148] The obtained reaction solution was distilled under reduced pressure at 100 mmHg or less at 60° C., and concentrated to a solid content concentration of 51% by mass.

[0149] Next, 86.32 g of polypropylene glycol with a weight average molecular weight of 1000 (manufactured by Sanyo Chemical Industry: Niu-Po-LPP-1000) was added to the concentrated reaction solution (35% by mass relative to the solid content in the above reaction solution). ).

[0150] In addition, 123.32 g of a solution containing tetramethylammonium hydroxide (TMAH) at a concentration of 100 ppm in isopropyl alcohol (IPA) was added (the conce...

Embodiment 2

[0167] To 1432.8 g of propylene glycol dimethyl ether, 147.6 g of triethoxysilane and 122.4 g of methyltriethoxysilane were added and stirred. Next, 97.2 g of pure water and 120 µl of nitric acid having a concentration of 60% by mass were added thereto, followed by stirring for 3 hours. Then, it was reacted at room temperature for 10 days to obtain a reaction solution containing a reaction product. The weight average molecular weight (Mw) of this reaction product was 1600.

[0168] The obtained reaction solution was distilled under reduced pressure at 100 mmHg or less at 40° C., and concentrated to a solid content concentration of 12% by mass.

[0169] Next, 108 g of polypropylene glycol having a weight average molecular weight of 400 (manufactured by Sanyo Kasei, product name: Niu-Po-LPP-400) was added to the concentrated reaction solution (100% by mass relative to the solid content in the above reaction solution) .

[0170] Separately, 12 g of a solution containing tetram...

Embodiment 3

[0187] 177.30 g of pure water and 10.6 μl of nitric acid having a concentration of 60 mass % were added to 731.79 g of methyltriethoxysilane, and stirred for 3 hours. Then, it was reacted at room temperature for 6 days to obtain a reaction solution (1) containing a reaction product. The weight average molecular weight (Mw) of this reaction product was 1800.

[0188] The obtained reaction solution (1) was distilled under reduced pressure at 60° C. below 100 mmHg, concentrated to a solid content concentration of 51% by mass, and then diluted by adding propylene glycol dimethyl ether until the solid content concentration was 35% by mass, thereby obtaining 1st siloxane polymer solution.

[0189] Separately, 73.9 g of triethoxysilane was dissolved in 799.0 g of ethylene glycol dimethyl ether and stirred. Next, 24.2 g of pure water and 3.2 µl of nitric acid having a concentration of 60% by mass were added thereto, followed by stirring for 3 hours. Then, it was reacted at room tem...

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Abstract

The invention relates to a coating liquid for the formation of a silicon dioxide-based coating film, containing (A) a reaction product which is obtained by the hydrolysis reaction of alkyl trialkoxy silane or (A') the reaction product which is obtained by the hydrolysis reaction of the silane compound which is composed of the alkyl trialkoxy silane and trialkoxy silane and at least one (B) which is selected from poly alkylene glycol and the tail end alkylates. The invention provides the coating liquid for the formation of the silicon dioxide-based coating film of the silicon dioxide-based coating film which can form the low dielectric constant and be difficult to cause the film reduction and the increase of the dielectric constant due to the stripping liquid.

Description

technical field [0001] The present invention relates to a coating liquid for forming a silica-based film. Background technique [0002] At present, there is an increasing demand for high integration of semiconductor devices, and for example, technologies for realizing high speed and low power consumption of ULSI (Ultra LSI) are attracting attention. Among them, the reduction of wiring resistance and capacitance is important, so the development of an interlayer insulating film with a low dielectric constant is required. [0003] In the following Patent Document 1, it is described that a condensate containing (a) a condensate obtained by hydrolyzing a trialkoxysilane in an organic solvent under an acid catalyst, and (b) a polyalkylene glycol and / or its terminal A coating solution for forming a silica-based film of an alkylate, and a technique for forming a silica-based film with a dielectric constant of 3.2 or less. [0004] [Patent Document 1] JP-A-2002-319582 [0005] How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/04H01L21/312
Inventor 饭田启之佐藤功高滨昌
Owner TOKYO OHKA KOGYO CO LTD
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