Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film supporting substrate used in filter for hydrogen production and method for manufacturing filter for hydrogen production

A manufacturing method and filter technology, applied in chemical instruments and methods, using solid contact hydrogen separation, membrane technology, etc., can solve the problems of inability to fully exert the durability of the filter, the difficulty of avoiding the deterioration of the adhesive, and the hydrogen permeation efficiency Obstacles and other problems, to achieve the effect of improving hydrogen permeation efficiency, improving hydrogen permeation efficiency, and large hydrogen permeation area

Inactive Publication Date: 2006-08-16
DAI NIPPON PRINTING CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is necessary to remove the adhesive from the Pd alloy film located in the pores of the support, which brings about a problem that the manufacturing process is complicated.
In addition, since the reformer is used under high temperature and high pressure, it is difficult to avoid the deterioration of the adhesive, and the durability of the filter cannot be fully exerted.
[0010] Further, in order to maintain the desired strength of the support body, the size of the opening diameter of the hole that the support body has is limited, and furthermore, the expansion of the area of ​​the effective Pd alloy film for hydrogen penetration is also limited, which brings about the improvement of hydrogen gas. barriers to efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film supporting substrate used in filter for hydrogen production and method for manufacturing filter for hydrogen production
  • Thin film supporting substrate used in filter for hydrogen production and method for manufacturing filter for hydrogen production
  • Thin film supporting substrate used in filter for hydrogen production and method for manufacturing filter for hydrogen production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0106] Fabrication of filters for hydrogen production

[0107] Prepare a SUS430 material with a thickness of 50 μm as a base material, and apply a photosensitive resist material (OFPR manufactured by Tokyo Ohka Industry Co., Ltd.) (film thickness 7 μm (when dry)) to both sides of the SUS430 material by dipping method, Next, a photomask in which a plurality of circular openings having an opening size (opening diameter) of 120 μm is arranged at a pitch of 200 μm is placed on the above-mentioned resist coating film, and the resist coating is applied through the photomask. The film was exposed and developed using sodium bicarbonate solution. In this way, a resist pattern having a circular opening with an opening size (opening diameter) of 120 μm was formed on both surfaces of the SUS430 material. In addition, the centers of the openings of the resist patterns formed on the respective surfaces were made uniform by the SUS430 material.

[0108]Then, using the above resist pattern ...

Embodiment 2

[0135] Fabrication of filters for hydrogen production

[0136] A SUS304 material with a thickness of 50 μm was prepared as a base material, and a photosensitive resist material (OFPR manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied (film thickness 7 μm (when dry)) to both sides of the SUS304 material by a dipping method. Next, a photomask in which a plurality of circular openings having an opening size (opening diameter) of 120 μm is arranged at a pitch of 200 μm is placed on the above-mentioned resist coating film, and the resist coating is applied through the photomask. The film was exposed and developed using sodium bicarbonate solution. In this way, a resist pattern with circular openings having an opening size (opening diameter) of 120 μm was formed on both surfaces of the SUS304 material. In addition, the centers of the openings of the resist patterns formed on the respective surfaces were made uniform by the SUS304 material.

[0137] Next, using the above resis...

Embodiment 3

[0160] Fabrication of filters for hydrogen production

[0161] In the same manner as in Example 2, a plurality of through holes were formed in the SUS304 material to obtain a conductive base material.

[0162] Next, Ni strike plating (thickness: 0.01 μm) was performed on the above-mentioned SUS304 material under the following conditions, and then resin parts (AZ111 manufactured by Shipley Co., Ltd.) were filled in the through-holes of the above-mentioned SUS304 material. The filling of these resin parts is carried out by means of grouting. (The above is the filling process)

[0163] (Conditions for Ni strike plating)

[0164] ·Electroplating solution composition: nickel chloride ...... 300g / L

[0165] Boric acid ...... 30g / L

[0166] PH: 2

[0167] ·Liquid temperature: 55~65℃

[0168] ·Current density: 10A / dm 2

[0169] Next, the following pretreatment is performed on one surface of the SUS304 material filled with the resin component in the through hole, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Current densityaaaaaaaaaa
Login to View More

Abstract

In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer of a fuel cell so as to be capable of stably producing high purity hydrogen gas.

Description

technical field [0001] The present invention relates to a method for manufacturing a filter for hydrogen production, in particular to a method for producing a filter for hydrogen production by steam reforming various hydrocarbon fuels to generate hydrogen-rich gas for fuel cells. [0002] In addition, it relates to a filter for hydrogen production, and in particular to a thin film support substrate for a hydrogen production filter that converts various hydrocarbon fuels into a hydrogen-rich gas to generate hydrogen-rich gas for fuel cells, and This supporting thin film supporting substrate is used in a method of manufacturing a filter for hydrogen production. Background technique [0003] In recent years, from the viewpoint of global environmental protection, there has been concern about the generation of global warming gases such as carbon dioxide, and the use of hydrogen as a fuel has attracted attention due to its high energy efficiency. In particular, fuel cells are als...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01D69/10B01D71/02H01M4/94B01D69/12C01B3/56C25D1/00H01M8/06
CPCY02E60/50
Inventor 八木裕前田高德太田善纪内田泰弘
Owner DAI NIPPON PRINTING CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com