LED with high light extracting efficiency and preparing method thereof

A light-emitting diode, high-light extraction technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of photon loss, the light in the sidewall cannot be used, etc., achieve small absorption loss, improve light extraction efficiency, avoid voids and pinhole effect

Inactive Publication Date: 2006-08-30
BEIJING TIMESLED TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Flip-chip traditional structure ordinary electrode LED with high reflective mirror is generally a flat plate type, which only reflects light on one plane, and the light on the side wall cannot be used, and many photons are emitted from the side wall and lost

Method used

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  • LED with high light extracting efficiency and preparing method thereof

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Embodiment Construction

[0018] On a grown LED structure wafer, use sputtering or evaporation to grow the P-electrode ohmic contact layer 4 on the wafer P-type semiconductor 9. The P-electrode ohmic contact layer is made of Ni / Au, with a thickness of 40 Å and 70 Å respectively. . Use photoresist as a mask to carve out the LED table structure pattern on the wafer by photolithography, and then use the ion etching system ICP to carve out the LED table; after carving out the LED table, strip and remove the remaining photoresist; then Put the sample in a rapid annealing furnace, the P electrode ohmic contact layer 4 alloy, the condition is that the ratio of oxygen and nitrogen components is 4 at 500°C:

[0019] Rapid annealing in a gas mixture of 1 for 1 minute;

[0020] 1) Protect the P electrode ohmic contact layer 4 and the side of the LED table with glue by ordinary photolithography, and sputter a Ti / Al metal film on the N-type semiconductor 9 at the bottom of the LED table as the N electrode by sput...

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Abstract

The invention is a light-emitting diode (LED) for improving light pickup efficiency, comprising: thickened P electrode, high reflecting metallic mirror, P electrode Ohm contact layer, P-type semiconductor, multi-quantum trap active region, thickened N electrode, N electrode Ohm contact layer, N-type semiconductor, and substrate, where the P-type semiconductor, multi-quantum trap active region, N-type semiconductor compose a table of the LED from the top down, and the substrate is a light outgoing side; and it is characterized by alternatively growing high and low refractivity materials on the LED side wall to form a high reflecting multilayer dielectric film. And the preparing method of the LED is characterized by preparing the high reflecting multilayer dielectric film after preparing the high reflecting metallic mirror. And the invention makes one-time growth of the high reflecting multilayer dielectric film while passivating the side wall. And the process is simple and the light output is improved at least by 20%.

Description

1. Technical field [0001] The invention relates to a structure for improving the light extraction efficiency of a semiconductor light-emitting diode (LED) and a preparation method thereof, belonging to the field of semiconductors. 2. Background technology [0002] Due to its small size, long life, high efficiency, high shock resistance, low power consumption, and low heat generation, light-emitting diodes are widely used in various items in daily life, such as indicator lights or light sources for various home appliances. In recent years, due to the development trend of multi-color and high-brightness, the scope of application has expanded to outdoor displays such as lighting, large outdoor display screens, traffic lights, etc. In particular, the use of GaN-based high-power light-emitting diodes (LEDs) may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of opt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/10
Inventor 沈光地达小丽郭霞高国
Owner BEIJING TIMESLED TECH CO LTD
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