Growing method of indium arsenide nano-ring prepared by indium arsenide-indium alluminum arsenide laminate point
A growth method and technology of indium arsenide, which are applied in the directions of nanotechnology, nanotechnology, nanostructure manufacturing, etc., to achieve the effects of simple method, high efficiency and improved areal density
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[0030] combined reference figure 1 and figure 2 :
[0031] (1) realize main equipment of the present invention
[0032] Molecular Beam Epitaxy System
[0033] Mechanical vacuum pump + diffusion vacuum pump (or other vacuum equipment)
[0034] temperature control system
[0035] According to the specific conditions of the growth equipment, make appropriate adjustments to the growth technology route.
[0036] (2) using a semi-insulating GaAs (001) single crystal as the substrate 10;
[0037] (3) Using a molecular beam epitaxy system to epitaxially grow a 200nm GaAs buffer layer on the GaAs substrate 10 (not shown in the figure, the buffer layer may not be present);
[0038] (4) At a temperature of 550°C, 5.6×10 -6 Torr's As 2 Heteroepitaxial growth of 10 molecular monolayer (ML) InAlAs layers 20 in the atmosphere, and the formation of self-assembled quantum dots was observed by the high-energy electron diffraction system;
[0039] (5) epitaxially growing a molecular si...
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