Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rare earth metal complex, material for thin-film formation, and process for producing thin film

A technology of complexes and metal atoms, applied in rare earth metal compounds, chemical instruments and methods, metal material coating technology, etc., can solve problems such as low volatility and increased molecular weight

Inactive Publication Date: 2006-09-13
ADEKA CORP
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, they have the problem of low volatility due to increased molecular weight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare earth metal complex, material for thin-film formation, and process for producing thin film
  • Rare earth metal complex, material for thin-film formation, and process for producing thin film
  • Rare earth metal complex, material for thin-film formation, and process for producing thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] [Example 1] Production of tris(sec-butylcyclopentadiene)yttrium

[0043] In a reaction flask replaced with dry argon, 0.948 mol of sodium hydride thoroughly washed with hexane and 30 ml of tetrahydrofuran were added, and 0.948 mol of sec-butylcyclopentadiene (racemate) was added dropwise at a temperature of 10°C or below . After the dropwise addition, it was stirred at 30°C until no gas was generated and a solution was obtained. The solution was cooled to 10°C or below, and while adding it to 0.190 mol of yttrium trichloride and 30 ml of tetrahydrofuran, the temperature of the reaction system was cooled to 10°C or below. After stirring at room temperature for 10 hours, the solvent was distilled off to obtain a residue. 600 ml of toluene was added to the residue, and the solid phase was filtered. After removing the solvent from the obtained filtrate by vacuum distillation, a light-shielding distillation apparatus was used to perform vacuum distillation. 39.4 g (yield 46%) of...

Embodiment 2

[0053] [Example 2] Production of tris(sec-butylcyclopentadiene)lanthanum

[0054] In a reaction flask replaced with dry argon, 0.816 mol of sodium hydride thoroughly washed with hexane and 30 ml of tetrahydrofuran were added, and 0.816 mol of sec-butylcyclopentadiene (racemate) was added dropwise at a temperature of 10°C or below . After the dropwise addition, it was stirred at 30°C until no gas was generated and a solution was obtained. The solution was cooled to 10°C or lower, and while adding it to 0.204 mol of lanthanum trichloride and 30 ml of tetrahydrofuran, the temperature of the reaction system was cooled to 10°C or lower. After stirring for 30 minutes at room temperature, the solid phase was filtered. After removing the solvent from the obtained filtrate by vacuum distillation, a light-shielding distillation apparatus was used to perform vacuum distillation. 43.1 g (yield 42%) of light yellow liquid was prepared from the fraction with 100 Pa and distilled vapor temperatu...

Embodiment 3

[0064] [Example 3] Production of Tris(sec-butylcyclopentadiene)praseodymium

[0065] In a reaction flask replaced with dry argon, 0.158 mol of sodium hydride thoroughly washed with hexane and 50 ml of tetrahydrofuran were added, and 0.158 mol of sec-butylcyclopentadiene (racemate) was added dropwise at a temperature of 10°C or below . After the dropwise addition, it was stirred at 30°C until no gas was generated and a solution was obtained. The solution was cooled to 10°C or below, and while adding it to 0.040 mol of praseodymium trichloride and 15 ml of tetrahydrofuran, the temperature of the reaction system was cooled to 10°C or below. After stirring at room temperature for 10 hours, the solvent was distilled off to obtain a residue. 100 ml of hexane was added to the residue, and the solid phase was filtered. After removing the solvent from the obtained filtrate by vacuum distillation, a light-shielding distillation apparatus was used to perform vacuum distillation. 11.3 g (yield...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A rare earth metal complex which is a tris-s-butylcyclopentadienyl rare earth metal complex represented by the following general formula (I). It is a liquid rare earth metal complex excellent in heat resistance and volatility and suitable for use as a material for thin-film formation. (In the formula, M represents a rare earth metal.)

Description

Technical field [0001] The present invention relates to a novel rare earth metal complex with sec-butylcyclopentadiene as a ligand, a raw material for forming a thin film containing the rare earth metal complex, and a method for producing a thin film containing a rare earth metal using the raw material for forming a thin film method. The novel rare earth metal complex of the present invention is useful in the raw materials for thin film formation, especially the raw materials for chemical vapor growth (hereinafter, also simply referred to as CVD). The rare earth-containing materials produced by using the raw materials for thin film formation of the present invention Metalloid thin films are useful in components of electronic components, components of optical communication devices using optical glass, and the like. Background technique [0002] Thin films containing rare earth metals can be used as high-dielectric capacitors, ferro-dielectric capacitors, gate insulating films, sup...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F17/00C23C16/18C01B13/20C01F17/00C07F5/00C23C16/42H01L21/316
CPCC07F17/00C23C16/18C07F5/00
Inventor 芳仲笃也佐藤宏树藤本龙作
Owner ADEKA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com