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Method for removing residual polymer in polysilicon etching technology

A polysilicon and polymer technology, applied in chemical instruments and methods, cleaning methods and utensils, electrical components, etc., can solve the problems of large consumption of cleaning agents and ultra-clean water, long cleaning time per wafer, low production efficiency, etc. To achieve the effect of reducing process time and labor, cleaning material and energy consumption, and improving production efficiency

Active Publication Date: 2006-10-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has the following defects: manual operation is required, the labor load is large, and the operating environment is dangerous; the process is complex, the cleaning time is long, and the production efficiency is low; long-term immersion in cleaning solvent is easy to corrode the silicon wafer or leave water marks, which will affect the performance of the device; cleaning agent , The consumption of ultra-clean water is large, and the production cost is high
This method has the following defects: no heating function (cannot reach 120°C high temperature), poor cleaning effect; expensive equipment, complicated program setting (multiple cleaning processes need to be set); low production efficiency (only single-chip cleaning can be performed, and single It takes a long time to clean the film); the consumption of cleaning agent and ultra-clean water is large, and the production cost is high

Method used

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  • Method for removing residual polymer in polysilicon etching technology
  • Method for removing residual polymer in polysilicon etching technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] After the polysilicon etching process is completed, immediately use the North Microelectronics plasma etching machine to perform the following plasma ignition cleaning steps:

[0024] Process parameters are set to: NF 3 The flow is 100sccm, O 2 The flow rate is 15sccm, the He flow rate is 30sccm, the chamber pressure is 8mT, the power of the upper electrode is 100W, the power of the lower electrode is 10W, the temperature of the silicon wafer is 65°C, and the process time is 50s.

[0025] This process effectively removes the sidewall of the pattern and the surrounding polymer covering.

Embodiment 2

[0027] After the polysilicon etching process is completed, immediately use the North Microelectronics plasma etching machine to perform the following plasma ignition cleaning steps:

[0028] Process parameters are set to: SF 6 The flow is 10sccm, O 3 The flow rate is 20sccm, the Ar flow rate is 50sccm, the chamber pressure is 5mT, the upper electrode power is 50W, the lower electrode power is 5W, the silicon wafer temperature is 50°C, and the process time is 60s.

[0029] This process effectively removes the sidewall of the pattern and the surrounding polymer covering.

Embodiment 3

[0031] After the polysilicon etching process is completed, immediately use the North Microelectronics plasma etching machine to perform the following plasma ignition cleaning steps:

[0032] Process parameters are set to: SF 4 The flow is 150sccm, O 3 The flow rate is 5sccm, the chamber pressure is 20mT, the power of the upper electrode is 150W, the power of the lower electrode is 30W, the temperature of the silicon wafer is 80°C, and the process time is 5s.

[0033] This process effectively removes the sidewall of the pattern and the surrounding polymer covering.

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Abstract

The present invention provides a method for removing residual polymer in multisilicon etching process. Said method is characterized by that after the multisilicon etching process is completed, the plasma strike cleaning step of gas can be promptly made, the technological gas includes fluorine-contained gas and oxygen-contained gas. The method described by said invention can effectively remove the residual polymer positioned on graphic side wall and graphic periphery.

Description

technical field [0001] The invention relates to a semiconductor device etching process, in particular to a method for removing residual polymer in the polysilicon etching process. Background technique [0002] After the etching process of the semiconductor device is completed, a certain amount of polymer will remain on the sidewall of the etched pattern and its surroundings. The main reasons for the formation of these polymers are: carbon and etchant (gases containing fluorine, chlorine, and bromine) separated from photoresist (photoresist) and etching products (such as bromide, chloride, etc.) ) combined to form a hard-to-remove fluorocarbon polymer chain compound, covering the side walls and bottom of the graphics. [0003] The presence of these polymers has a dual effect. On the one hand, the polymer attached to the sidewall forms an anti-corrosion passivation film, thereby preventing lateral etching, which is conducive to the formation of highly anisotropic graphics an...

Claims

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Application Information

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IPC IPC(8): H01L21/306B08B7/00C23F1/12C23F4/00H01L21/3065H01L21/311H01L21/3213
Inventor 张玮
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD