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Microwave plasma device and method for preparing diamond film and etched carbon film

A microwave plasma and diamond thin film technology, applied in the field of plasma, can solve the problems of unfavorable research and application of plasma technology, expensive equipment and other problems, and achieve the effects of simple structure, high energy conversion efficiency, high performance and price ratio

Inactive Publication Date: 2006-11-08
HANGZHOU DAHUA INSTR MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, there are very few self-produced equipment in my country that can be used for the research and application of microwave plasma technology. The equipment for research and application of microwave plasma technology is basically imported from abroad. The price of these equipment is very expensive. And research institutions can not be interested, which is not good for our country to carry out research and application of plasma technology

Method used

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  • Microwave plasma device and method for preparing diamond film and etched carbon film
  • Microwave plasma device and method for preparing diamond film and etched carbon film
  • Microwave plasma device and method for preparing diamond film and etched carbon film

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Embodiment Construction

[0027] The markings in the accompanying drawings are as follows:

[0028] 1. Magnetron 2. Water load 3. Circulator

[0029] 4. Three-screw impedance adjuster 5. Substrate table 6. Gas outlet of reaction chamber

[0030] 7. Quartz tube reaction chamber 8. Waveguide 9. Short circuit piston

[0031] 10. Upper observation window 11. Working gas inlet 12. Cooling water connection

[0032] 13. Thermocouple 14. Microwave cavity 15. Substrate

[0033] 16. Water cooling bracket 17. Vacuum pump 18. Exhaust port

[0034] 19. Reaction chamber exhaust pipe 20. Reaction chamber intake pipe 21. Working gas inlet

[0035] 22. Diaphragm valve 23. Trim valve 24. Flow meter

[0036] 25. Pointer vacuum gauge 26. Digital vacuum gauge 27. Circulating water pump

[0037] 28. Cooling water outlet 29. Cooling water return inlet 30. Water tank 31. Compressor

[0038] The present invention will be further described below in combination with embodiments and accompanying drawings.

[0039] A devic...

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Abstract

The present invention relates to microwave plasma device and method for preparing diamond film and etched carbon film. The microwave plasma device includes at least one magnetron as the microwave source, one rectangular waveguide, one impedance regulator, one microwave resonant cavity, one quartz tube reactor inside the microwave resonant cavity and one circuit-shorting piston on side of the resonant cavity. The preparation process of diamond film includes the following steps: setting the chip on the chip table, running the vacuum pump and raising the work voltage of the magnetron gradually to generate plasma; introducing carbon containing work gas, regulating the impedance regulator to reach the maximum microwave power, working for 20-40 min to nucleate; further introducing carbon containing work gas, working stably for 2-5 hr to form diamond film on the chip. Similarly, etched carbon film may be prepared.

Description

technical field [0001] The invention relates to the technical field of microwave plasma, in particular to a device which can be used for preparing diamond film and etching carbon film on glass substrate and its application. Background technique [0002] At present, plasma technology has been more and more widely used in many high-tech fields. [0003] The preparation of diamond films by microwave plasma chemical vapor deposition is one of the most influential applications of plasma technology. Diamond has the highest hardness, high thermal conductivity and chemical stability, has good light transmission, and has a wide range of applications in optics, microelectronics and military fields. Because natural diamond is rare and expensive, the industrial application of natural diamond is limited. In 1955, General Electric Company of the United States first announced that artificial diamond had been prepared by high temperature and high pressure method. This technology has led ...

Claims

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Application Information

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IPC IPC(8): C23C16/513C23C16/27H01J37/317
Inventor 马志斌郑志荣
Owner HANGZHOU DAHUA INSTR MFG CO LTD
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