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Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring

A technology of chemical machinery and control methods, applied in chemical instruments and methods, machine tools for surface polishing, and other chemical processes, can solve problems such as dish-shaped pits, achieve the goal of reducing dish-shaped pits, not affecting the polishing rate, and realizing the speed consistent effect

Inactive Publication Date: 2006-11-15
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to overcome the above disadvantages, in order to solve the dish-shaped pit problem existing in the chemical mechanical polishing process of the existing copper wiring, to provide a kind of ULSI multiplex with strong chemical action, strong complexation, no scratch, and low cost. Control Method of Disc in Chemical Mechanical Polishing of Layer Copper Wiring

Method used

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  • Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring
  • Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring
  • Method for controlling disc-like pit during chemically mechanical polishing for ULSI multiple-layered copper wiring

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Effect test

Embodiment 1

[0038] Initial polishing and final polishing polishing conditions and polishing fluid composition settings:

[0039] The formula of Cu-CMP polishing liquid in the initial polishing stage uses 40nm silica sol as abrasive, SiO 2 Concentration is 40wt%, and the ratio of deionized water is 1:1; FA / O type I active agent is selected as surfactant, and the content is 50ml / l; FA / O chelating agent is selected, and the content is 50ml / l, in order to adjust pH 9.5-11.5; choose H 2 o 2 It is an oxidizing agent, and the addition amount of the oxidizing agent is 30ml / l. The polishing conditions are: pressure 200g / cm 2 , the flow rate is 200ml / l, the rotational speed is 100rpm / min, the temperature is 30°C, the polishing rate can be adjusted between 200-1100nm / min, and the controllability is good; the polishing time is 1-5min. The polishing rate is shown in Table 1:

[0040] Table 1 Test 1

[0041]

[0042] As can be seen from the above results, the polishing rate of copper in the in...

Embodiment 2

[0047] Initial polishing and final polishing polishing conditions and polishing fluid composition settings:

[0048] The formula of Cu-CMP polishing liquid in the initial polishing stage uses 20nm silica sol as abrasive, SiO 2 Concentration is 50wt%, and the ratio of deionized water is 1:3; FA / O type I active agent is selected as surfactant, and the content is 80ml / l; FA / O chelating agent is selected, and the content is 60ml / l, in order to adjust pH 9.5-11.5; choose H 2 o 2 It is an oxidizing agent, and the addition amount of the oxidizing agent is 30ml / l. The polishing conditions are: pressure 250g / cm 2 , the flow rate is 200ml / l, the rotation speed is 120rpm / min, the temperature is 40°C, and the polishing time is 1-5min.

[0049] The formula of the Cu-Ta CMP polishing liquid in the final polishing stage selects 15nm silica sol as the abrasive material, the concentration is 40%, and the ratio with deionized water is 1:2; the FA / O type active agent is selected as the surfa...

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Abstract

A method for controlling the dish pits on the ULSI multi-layer wiring in chamico-mechanical polishing includes such steps as diluting SiO2 hydrosol by deionized water, adding metal ion chelating agent to regulate pH=9.5-11.5, adding alcohol-ether kind of surfactant and oxidant while stirring to obtain polishing liquid, and polishing at 20-40 deg.C and 60-120 rpm under 100-250 g / sq.cm for 1-5 m for copper and for 30-60 s for copper, barrier layer and dielectric layer.

Description

technical field [0001] The invention relates to chemical mechanical planarization technology, in particular to a method for controlling dish-shaped pits in chemical mechanical polishing of ULSI multilayer copper wiring. Background technique [0002] The increase of integrated circuit density and the reduction of device feature size increase the capacitance between lines and the resistance of metal wiring, and the RC delay of metal interconnection caused by this is even greater than the intrinsic delay of the device. Since Cu has lower resistivity, superior electromigration characteristics and low thermal sensitivity than Al, it can produce smaller RC delay and improve circuit reliability, and has been used as an ideal material for interconnection lines. At the same time, because the viscosity of copper and the dielectric layer is poor, and it is easy to diffuse into silicon and silicon dioxide, forming deep-level impurities, which affects the power characteristics of the dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02C09G1/02C09G1/04
CPCB24B37/044C09G1/02C09K3/1463H01L21/3212
Inventor 刘玉岭刘博
Owner HEBEI UNIV OF TECH