Low toxicity ZnSe bluish violet light quanta point preparation method

A quantum dot, low-toxicity technology, applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of narrow emission spectrum, short luminescence wavelength, difficult synthesis, etc., and achieve safe raw materials, high fluorescence efficiency, and low price Effect

Inactive Publication Date: 2006-11-22
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Today's high-quantum-efficiency CdSe semiconductor nanomaterials have the advantages of quantum size effect, quantum confinement effect, high fluorescence efficiency, narrow emission spectrum, and continuous distribution of excitation spectrum. Due to the limitation, it can only synthesize quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0011] 1. Weigh 0.079g of selenium powder with a weight percentage of 3.33%, put it into a penicillin bottle, add 1ml of tri-n-octylphosphine, with a weight percentage of 33.55%, and 2ml of octadecene, with a weight percentage of 63.12%, after sealing Ultrasonic for about 30 minutes to completely dissolve the selenium powder to prepare a selenium stock solution.

[0012] 2. Weigh 0.0163g of ZnO, 0.73% by weight, 0.228g of stearic acid, 10.25% by weight, and 2.5ml of octadecene, 89.02% by weight, put them into a three-necked bottle, and stir them magnetically Nitrogen gas is filled at the same time, heated to 160° C. with a heating mantle, and kept for 5 minutes until the solution is a colorless and transparent solution; then the temperature is naturally cooled to room temperature to obtain a zinc precursor.

[0013] 3. Add 1.5 g of hexadecylamine to step 2, 34.7% by weight, 0.6 g of tri-n-octylphosphine oxide, 13.88% by weight, heat and stir to 300 ° C and immediately inject t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparing method of low poisonous ZnSe quantum point in the luminous material technology domain, which comprises the following steps: preparing zinc priority solution through ZnO, geoceric acid and octadecene in the nitrogen condition; preparing selenium reserving liquid through selenium powder, tripositive octyl phosphine and octadecene in the sealing container; adding tripositive octyl phosphine oxide and hexadecylamine in the zinc priority solution; injecting the selenium reserving liquid rapidly in the nitrogen condition; cooling to prepare ZnSe quantum point.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, relates to fluorescent nanometer materials, and relates to a method for preparing semiconductor blue-violet light ZnSe nanometer materials. The invention adopts a high-temperature organic solvent of octadecene (ODE) to prepare low-toxicity ZnSe blue-violet light quantum dots. Background technique [0002] In recent years, II-VI group quantum dot materials with semiconductor wide bandgap have been made by various methods, and they have shown attractive application prospects in optoelectronic devices, such as making light-emitting diodes, quantum dot lasers, biological probes, etc. And optical converters or modulators etc. Since the report on CdSe quantum dots by Nie et al. on "Science" in 1998, II-VI, III-V group semiconductor nanomaterials (CdSe, CdS, CdTe, ZnSe, InP, GaAs, etc.) have attracted a great deal of attention. Scholars at home and abroad attach great importance to it, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/54
Inventor 曾庆辉孔祥贵刘瑞麟张友林孙雅娟
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products