Method for preparing interval and configuration adjustable and controllable nano particle ordered array

A nanoparticle and ordered array technology is applied in the field of preparation of nanoparticle ordered arrays with adjustable spacing and configuration, which can solve the problems of high efficiency and low cost, achieve good long-range order, overcome difficult control, Simple preparation process

Inactive Publication Date: 2006-12-27
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In short, for the large-scale preparation of ordered arrays of nanoparticles with a size less than 30 nanometers with adjustable spacing and configuration, there is no general method with high efficiency and low cost.

Method used

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  • Method for preparing interval and configuration adjustable and controllable nano particle ordered array
  • Method for preparing interval and configuration adjustable and controllable nano particle ordered array
  • Method for preparing interval and configuration adjustable and controllable nano particle ordered array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1 A method for preparing an ordered array of nanoparticles with adjustable spacing and configuration, the preparation steps are as follows:

[0024] (1) Dissolve 0.1g of polystyrene-polybutadiene-polystyrene (SBS) triblock polymer in 9.9g of toluene to form a final solution of 1wt% by weight; The solution was spin-coated on a clean quartz glass sheet at 2500rpm; the quartz glass sheet was placed in a weighing bottle, and 5ml of toluene was dropped in it, and then the weighing bottle was sealed with cotton cloth to control the evaporation rate and prepare a template with parallel columnar shapes in the plane ;

[0025] (2) Fix the template of the above-mentioned ordered pattern on the rotatable substrate holder 5, and then seal the substrate holder 5 in a suitable position in the high vacuum deposition chamber 8;

[0026] (3) Utilize pumping system Rhodes pump 9 and molecular pump 10 to vacuumize, make the vacuum degree of deposition chamber 8 be 5 * 1 -5 At Pa...

Embodiment 2

[0028] Example 2 The preparation method of an ordered array of nanoparticles with adjustable spacing and configuration, the preparation steps are as follows:

[0029] (1) 0.05g polystyrene-polymethyl methacrylate diblock polymer is dissolved in 9.95g chloroform, forms the final solution that percentage by weight is 0.5wt%; 25 μ l final solutions are spun with 2800rpm with micro sampler Apply on a clean silicon wafer; place the silicon wafer in a weighing bottle, drop 10ml of chloroform into it, then seal the weighing bottle with aluminum foil to control the evaporation rate and prepare a template with an ordered porous layered morphology;

[0030] (2) Fix the template of the above-mentioned ordered pattern on the rotatable substrate holder 5, and then seal the substrate holder 5 in a suitable position in the high vacuum deposition chamber 8;

[0031] (3) Utilize pumping system Rhodes pump 9 and molecular pump 10 to evacuate, make the vacuum degree of deposition chamber 8 be 7....

Embodiment 3

[0033] Example 3 The preparation method of an ordered array of nanoparticles with adjustable spacing and configuration, the preparation steps are as follows:

[0034] (1) Dissolve 0.08 g of polystyrene-polyisoprene diblock polymer in 10 g of chloroform to form a final solution with a weight percentage of 1 wt %; use a micro sampler to spin-coat 25 μl of the final solution at 2800 rpm on the cleaning Place the silicon wafer in a weighing bottle, drop 15ml of chloroform in it, then seal the weighing bottle with aluminum foil to control the evaporation rate and then prepare a template with an ordered porous layered morphology;

[0035] (2) Fix the template of the above-mentioned ordered pattern on the rotatable substrate holder 5, and then seal the substrate holder 5 in a suitable position in the high vacuum deposition chamber 8;

[0036] (3) Utilize pumping system Rhodes pump 9 and molecular pump 10 to evacuate, make the vacuum degree of deposition chamber 8 be 7.5 * 10 -5 Pa, ...

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Abstract

The invention relates to preparation method of space and configuration-adjustable nano granule ordered array. The method comprises steps of dissolving block polymer in solvent, rotably coating the substrate(5) with solution, placing substrate in weighing bottle with toluene drop, sealing the bottle with aluminum foil or cotton cloth, and making ordered pattern template, fixing it on substrate, placing it in settling chamber (8), exhausting air to vacuum, filling inert gas into condense chamber (6). Atomizer (1) produce atom gas through magnetron sputtering or high temperature evaporation. The atom gas is condensed by inert gas to form into nano particle and form highly-oriented nano particle beam current (4) through spray nozzle . The nano particle beam current is deposited on template substrate. The deposit is stopped when covering rate is not more than 100%, thus linear nano particle array or two-dimensional ordered nano particle array is obtained. The invention has simple process, low cost, high efficiency, easy to achieve scaled production.

Description

1. Technical field [0001] Nanomaterials and nanodevices, bio / chemical sensors 2. Background technology [0002] Nanoparticle arrays have an important application background in nanotechnology, and a variety of preparation methods have been developed internationally. However, there is still a lack of cheap and effective control methods for the preparation of ordered arrays of nanoparticles with diameters below 30 nm. Although the existing photolithography technology can accurately construct ordered arrays of particles on the order of microns and hundreds of nanometers, the photolithography technology is limited by the diffraction of light and is not suitable for preparing structures below 100 nm. Theoretically speaking, electron beam etching technology and ion beam etching technology are also capable of preparing nanostructures of tens of nanometers or even below 10 nm, but electron beam or ion beam etching technology is extremely low in efficiency due to its high cost. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 时钟涛韩民周剑峰宋凤麒万建国王广厚
Owner NANJING UNIV
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