Method for preparing interval and configuration adjustable and controllable nano particle ordered array

A nanoparticle and ordered array technology is applied in the field of preparation of nanoparticle ordered arrays with adjustable spacing and configuration, which can solve the problems of high efficiency and low cost, achieve good long-range order, overcome difficult control, Simple preparation process
CN1884042AInactive Publication Date: 2006-12-27NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV
Publication Date
2006-12-27
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to preparation method of space and configuration-adjustable nano granule ordered array. The method comprises steps of dissolving block polymer in solvent, rotably coating the substrate(5) with solution, placing substrate in weighing bottle with toluene drop, sealing the bottle with aluminum foil or cotton cloth, and making ordered pattern template, fixing it on substrate, placing it in settling chamber (8), exhausting air to vacuum, filling inert gas into condense chamber (6). Atomizer (1) produce atom gas through magnetron sputtering or high temperature evaporation. The atom gas is condensed by inert gas to form into nano particle and form highly-oriented nano particle beam current (4) through spray nozzle . The nano particle beam current is deposited on template substrate. The deposit is stopped when covering rate is not more than 100%, thus linear nano particle array or two-dimensional ordered nano particle array is obtained. The invention has simple process, low cost, high efficiency, easy to achieve scaled production.
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Description

1. Technical field

[0001] Nanomaterials and nanodevices, bio / chemical sensors 2. Background technology

[0002] Nanoparticle arrays have an important application background in nanotechnology, and a variety of preparation methods have been developed internationally. However, there is still a lack of cheap and effective control methods for the preparation of ordered arrays of nanoparticles with diameters below 30 nm. Although the existing photolithography technology can accurately construct ordered arrays of particles on the order of microns and hundreds of nanometers, the photolithography technology is limited by the diffraction of light and is not suitable for preparing structures below 100 nm. Theoretically speaking, electron beam etching technology and ion beam etching technology are also capable of preparing nanostructures of tens of nanometers or even below 10 nm, but electron beam or ion beam etching technology is extremely low in efficiency due to its high cost. The ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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