Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface

A technology of solar cells and high transmittance, which is applied in the manufacture of circuits, electrical components, and final products, and can solve problems such as reducing battery performance

Inactive Publication Date: 2007-04-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lattice constant of ZnSe is 0.567nm, and the lattice mismatch rate with both GaAs and GaInP is 0.23%. During epitaxial growth, a large number of defects will be generated, forming effective recombination centers, and reducing the performance of the battery in all aspects.

Method used

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Experimental program
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Effect test

Embodiment 1

[0023] (1): Use gallium arsenide (GaAs) or germanium (Ge) single wafer as the substrate;

[0024] (2): Using metal organic compound vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth techniques to grow n + / p-type solar cell epitaxial wafer, epitaxial to the emitter layer of the top cell;

[0025] (3): Epitaxial layer of zinc selenium sulfur (ZnSe 0.944 S 0.056 ) material as the window layer, in which the temperature is controlled at 600°C and the pressure is controlled at 300Pa; argon is used as the carrier gas to carry Zn vapor and H 2 Se / H 2 S gas enters the deposition chamber, and the flow rate of the carrier gas is strictly controlled at 0.5L / min.

[0026] (4): Epitaxially highly doped GaAs cap layer on the window layer to complete the preparation of the cell epitaxial wafer;

[0027] (5): AuGeNi / Au positive electrode is evaporated on the epitaxial wafer, and Ti / Au back electrode is made on the highly doped GaAs at the bottom of the epitaxial wafer to ...

Embodiment 2

[0030] The steps of this embodiment 2 are exactly the same as the steps of embodiment 1, the difference is that step (3): epitaxially layer a layer of zinc selenium sulfur (ZnSe 0.944 S 0.056 ) material as the window layer, in which the temperature is controlled at 800°C and the pressure is controlled at 500Pa; argon is used as the carrier gas to carry Zn vapor and H 2 Se / H 2 S gas enters the deposition chamber, and the flow rate of the carrier gas is strictly controlled at 2.5L / min.

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Abstract

The invention is concerned with production method of high transmission ration window layer zinc selenium sulfur to GaAs sun energy batteries structure in type of n+/p. Take p type of GaAs or germanium mono crystal slice as underlay. Use metal organic compound vapor deposition and molecule bundle lift-off growth technology to develop sun energy batteries lift-off slice and extend to the project section of the top batteries. Extend a layer of zinc selenium sulfur material of the project section as window layer and extend impure GaAs cap layer on the window layer and get the batteries lift-off slice. Braising plating gold germanium nickel/ gold positive electricity on the upper face of lift-off slice and produce titanium/ gold negative electricity on the surface of high impure GaAs of the bottom of lift-off slice. Fret cap layer, alloy, braising plating reducing reflection film, fret table-board, encapsulate the batteries, fix device of gathering light, cooling device and the equipment for tracking the sun to produce the batteries.

Description

technical field [0001] The present invention belongs to the field of semiconductor technology, in particular to a n + / p-type GaAs solar cell surface high transmittance window layer zinc selenium sulfur (ZnSe 0.944 S 0.056 ) preparation method. Background technique [0002] In the field of optoelectronic technology, AlGaAs alloy materials and AlGaAs / GaAs heterostructures have been studied in depth; in the field of photovoltaic cells, Al 0.8 Ga 0.2 The As layer has also been widely used as the window layer of GaAs cells. where Al 0.8 Ga 0.2 The band gap of As is about 2.1eV, and most sunlight can pass through, but because the band gap is not wide enough, it will absorb some high-energy photons, resulting in a current loss of about 10% in GaAs cells; in addition, its energy band compensation mainly occurs In the conduction band, in order to limit the reverse diffusion of photogenerated electrons, it is only suitable for p-type window layer, and it is easy to oxidize. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 白一鸣陈诺夫梁平孙红胡颖王晓东
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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