Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface

Abstract

The invention is concerned with production method of high transmission ration window layer zinc selenium sulfur to GaAs sun energy batteries structure in type of n+ / p. Take p type of GaAs or germanium mono crystal slice as underlay. Use metal organic compound vapor deposition and molecule bundle lift-off growth technology to develop sun energy batteries lift-off slice and extend to the project section of the top batteries. Extend a layer of zinc selenium sulfur material of the project section as window layer and extend impure GaAs cap layer on the window layer and get the batteries lift-off slice. Braising plating gold germanium nickel / gold positive electricity on the upper face of lift-off slice and produce titanium / gold negative electricity on the surface of high impure GaAs of the bottom of lift-off slice. Fret cap layer, alloy, braising plating reducing reflection film, fret table-board, encapsulate the batteries, fix device of gathering light, cooling device and the equipment for tracking the sun to produce the batteries.

Description

technical field [0001] The present invention belongs to the field of semiconductor technology, in particular to a n + / p-type GaAs solar cell surface high transmittance window layer zinc selenium sulfur (ZnSe 0.944 S 0.056 ) preparation method. Background technique [0002] In the field of optoelectronic technology, AlGaAs alloy materials and AlGaAs / GaAs heterostructures have been studied in depth; in the field of photovoltaic cells, Al 0.8 Ga 0.2 The As layer has also been widely used as the window layer of GaAs cells. where Al 0.8 Ga 0.2 The band gap of As is about 2.1eV, and most sunlight can pass through, but because the band gap is not wide enough, it will absorb some high-energy photons, resulting in a current loss of about 10% in GaAs cells; in addition, its energy band compensation mainly occurs In the conduction band, in order to limit the reverse diffusion of photogenerated electrons, it is only suitable for p-type window layer, and it is easy to oxidize. T...

AI Technical Summary

Problems solved by technology

However, the lattice constant of ZnSe is 0.567nm, and the lattice mismatch rate with both GaAs and GaInP is 0.23%. During epitaxial growth, a large number of defects will be generated, forming effective recombination centers, and reducing the performance of the battery in all aspects.