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Process for preparing vanadium oxide film

A technology of vanadium oxide film and sputtering coating, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve difficult problems, achieve excellent performance, reduce process difficulty, and increase repeatability.

Inactive Publication Date: 2007-05-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the process of reactive ion sputtering coating is generally used at home and abroad to directly generate the required vanadium oxide film. Restricted by many factors, it is very important to precisely control the reaction gas flow rate, which makes it very difficult to find a repeatable method for preparing vanadium oxide by reactive ion sputtering coating process

Method used

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  • Process for preparing vanadium oxide film
  • Process for preparing vanadium oxide film
  • Process for preparing vanadium oxide film

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Experimental program
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Effect test

specific Embodiment approach 1

[0019] 1. Using Si-plated 3 N 4 Thin-film Si wafers are used as substrates, and the substrates are cleaned and dried for subsequent use before coating.

[0020] 2. The vanadium oxide film is prepared by reactive ion sputtering coating process, and the specific process conditions are:

[0021] Target material: pure metal vanadium; background vacuum degree: -3 Pa; sputtering temperature: 200±1°C; O 2 : Ar=1:1.6; Working pressure: 2.8±0.6Pa; O during sputtering 2 Flow: 2.4sccm; Ar flow during sputtering: 3.9±0.2sccm; sputtering voltage: 240V;

[0022] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0023] 3. Naturally cool to room temperature in an argon atmosphere.

[0024] The vanadium oxide thin film obtained according to the above-mentioned embodiment is analyzed by an XPS analyzer to be a vanadium oxide mixed-phase polycrystalline thin film based on vanadium dioxide; when its resistance-temperature coefficient (T...

specific Embodiment approach 2

[0025] Steps 1 and 3 are the same, and will not be repeated here; Step 2 is: using reactive ion sputtering coating technology to prepare a vanadium oxide film, and the specific process conditions are:

[0026] Target material: pure metal vanadium; background vacuum degree: -3 Pa; Sputtering temperature: around 200°C; O 2 : Ar=1:2.0; working pressure: about 2.8Pa; O during sputtering 2 Flow: 1.8sccm; Ar flow during sputtering: about 3.9sccm; sputtering voltage: 245V;

[0027] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0028] The vanadium oxide thin film obtained according to the above-mentioned embodiment is analyzed by an XPS analyzer to be a vanadium oxide mixed-phase polycrystalline thin film based on vanadium dioxide; when its resistance-temperature coefficient (TCR) is at 30° C., reach more than 5%.

specific Embodiment approach 3

[0029] Steps 1 and 3 are the same, and will not be repeated here; Step 2 is: using reactive ion sputtering coating process to prepare vanadium oxide film, and the specific process conditions are:

[0030] Target material: pure metal vanadium; background vacuum: -3 Pa; Sputtering temperature: around 200°C; O 2 : Ar=1:2.4; working pressure: about 2.8Pa; O during sputtering 2 Flow: 1.6sccm; Ar flow during sputtering: about 3.9sccm; sputtering voltage: 250V;

[0031] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0032] The vanadium oxide thin film obtained according to the above-mentioned embodiment is analyzed by an XPS analyzer to be a vanadium oxide mixed-phase polycrystalline thin film based on vanadium dioxide; when its resistance-temperature coefficient (TCR) is at 30° C., Reach more than 3.2%.

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Abstract

A method for producing vanadium oxide film belongs to the field of electronic material technology, specifically relates to a method for producing vanadium oxide film. The invention adopts reaction ions sputtering coating technology to produce the film through strictly controlling the discharge of the reaction gas to reduce the production difficulty, improve the repeatability. Mixed phase polycrystal vanadium oxide film with vanadium oxide as the base and good performances can be produced through the method of the invention. The resistance-temperature coefficient can reach to over 3% at 30DEG C.

Description

technical field [0001] A method for preparing a vanadium oxide film belongs to the technical field of electronic materials, and in particular relates to a method for preparing a vanadium oxide film. Background technique [0002] Since the first discovery of vanadium oxide films with temperature phase transition properties in the late 1950s, vanadium oxide films have aroused widespread interest from researchers from all over the world. The research results show that among the numerous vanadium oxides, at least 8 vanadium oxides have transformation characteristics from high-temperature metal phase to low-temperature semiconductor phase, and the transformation temperature is as low as -163°C and as high as 258°C, while vanadium dioxide (VO 2 ) is most noticeable due to its transition temperature near room temperature. At the same time, the vanadium dioxide film has reversible temperature phase transition characteristics, and its typical phase transition temperature is 68°C. At...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08C23C14/54
Inventor 吴志明蒋亚东王涛宋建伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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