Process for preparing vanadium oxide film

A technology of vanadium oxide film and sputtering coating, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve difficult problems, achieve excellent performance, reduce process difficulty, and increase repeatability.

Inactive Publication Date: 2007-05-23
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the process of reactive ion sputtering coating is generally used at home and abroad to directly generate the required vanadium oxide film. Restricted by many factors, it is very

Method used

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  • Process for preparing vanadium oxide film
  • Process for preparing vanadium oxide film
  • Process for preparing vanadium oxide film

Examples

Experimental program
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Example Embodiment

Specific embodiment one

[0019] 1. Using Si plated 3 N 4 The thin-film Si wafer is used as the substrate, and the substrate is cleaned and dried for use before coating.

[0020] 2. Using reactive ion sputtering coating process to prepare vanadium oxide thin film, the specific process conditions are:

[0021] Target material: pure metal vanadium; background vacuum degree: -3 Pa; Sputtering temperature: 200±1℃; O 2 :Ar=1:1.6; working pressure: 2.8±0.6Pa; O during sputtering 2 Flow rate: 2.4sccm; Ar flow rate during sputtering: 3.9±0.2sccm; Sputtering voltage: 240V;

[0022] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0023] 3. Naturally cool to room temperature in an argon atmosphere.

[0024] The vanadium oxide film prepared according to the above-mentioned embodiment is analyzed by XPS analyzer to be a vanadium oxide mixed phase polycrystalline film based on vanadium dioxide; its resistance-temperature coefficient (TCR)...

Example Embodiment

Specific embodiment two

[0025] Steps 1 and 3 are the same and will not be repeated here; Step 2 is: preparing a vanadium oxide thin film by a reactive ion sputtering coating process, and the specific process conditions are:

[0026] Target material: pure metal vanadium; background vacuum degree: -3 Pa; Sputtering temperature: about 200℃; O 2 :Ar=1:2.0; working pressure: about 2.8Pa; O during sputtering 2 Flow rate: 1.8sccm; Ar flow rate during sputtering: about 3.9sccm; Sputtering voltage: 245V;

[0027] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0028] The vanadium oxide film prepared according to the above-mentioned embodiment is analyzed by XPS analyzer to be a vanadium oxide mixed phase polycrystalline film based on vanadium dioxide; its resistance-temperature coefficient (TCR) is at 30°C, Achieve more than 5%.

Example Embodiment

Specific embodiment three

[0029] Steps 1 and 3 are the same and will not be repeated here; Step 2 is: preparing vanadium oxide thin films by reactive ion sputtering coating process, the specific process conditions are:

[0030] Target material: pure metal vanadium; background vacuum degree: -3 Pa; Sputtering temperature: about 200℃; O 2 :Ar=1:2.4; working pressure: about 2.8Pa; O during sputtering 2 Flow rate: 1.6sccm; Ar flow rate during sputtering: about 3.9sccm; Sputtering voltage: 250V;

[0031] Dynamic and precise control of the gas flow during the sputtering process until the end of the coating;

[0032] The vanadium oxide film prepared according to the above-mentioned embodiment is analyzed by XPS analyzer to be a vanadium oxide mixed phase polycrystalline film based on vanadium dioxide; its resistance-temperature coefficient (TCR) is at 30°C, Achieve more than 3.2%.

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Abstract

A method for producing vanadium oxide film belongs to the field of electronic material technology, specifically relates to a method for producing vanadium oxide film. The invention adopts reaction ions sputtering coating technology to produce the film through strictly controlling the discharge of the reaction gas to reduce the production difficulty, improve the repeatability. Mixed phase polycrystal vanadium oxide film with vanadium oxide as the base and good performances can be produced through the method of the invention. The resistance-temperature coefficient can reach to over 3% at 30DEG C.

Description

technical field [0001] A method for preparing a vanadium oxide film belongs to the technical field of electronic materials, and in particular relates to a method for preparing a vanadium oxide film. Background technique [0002] Since the first discovery of vanadium oxide films with temperature phase transition properties in the late 1950s, vanadium oxide films have aroused widespread interest from researchers from all over the world. The research results show that among the numerous vanadium oxides, at least 8 vanadium oxides have transformation characteristics from high-temperature metal phase to low-temperature semiconductor phase, and the transformation temperature is as low as -163°C and as high as 258°C, while vanadium dioxide (VO 2 ) is most noticeable due to its transition temperature near room temperature. At the same time, the vanadium dioxide film has reversible temperature phase transition characteristics, and its typical phase transition temperature is 68°C. At...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/08C23C14/54
Inventor 吴志明蒋亚东王涛宋建伟
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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