Soldering method, solder pellet for die bonding, method for manufacturing solder pellet for die bonding and electronic component
A chip welding and manufacturing method technology, applied in the direction of welding/cutting medium/material, welding medium, electrical components, etc., can solve the problems of poor heat dissipation, device performance degradation, poor wettability, etc., and achieve sufficient joint strength and reliability good effect
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Embodiment 1
[0020] A 10×10×0.3 (mm) semiconductor element chip was bonded to a 30×30×0.3 (mm) substrate (nickel-plated copper substrate) by soldering with solder particles. The lead-free solders used are as shown in Table 1, and are those in which P was added to the Sn-Cu-Ni-based solder. The shape of the solder particles is formed into 10×10×0.1 (mm), the solder particles are sandwiched between the semiconductor element and the substrate, and the temperature is above 235°C in a hydrogen-nitrogen mixed gas atmosphere with an oxygen concentration of 50ppm. Heating was performed for 3 minutes, the peak temperature was 280° C., and reflow was performed with a total reflow time of 15 minutes. The thickness and metal composition of the protective film formed on the surface were measured by xps. Furthermore, the porosity was measured by observing the voids in the die-bonded portion through an X-ray apparatus.
Embodiment 2
[0022]A 10×10×0.3 (mm) semiconductor element chip was bonded to a 30×30×0.3 (mm) substrate (nickel-plated copper substrate) by soldering with solder particles. The lead-free solders used are as shown in Table 1, and are those in which P was added to the Sn-Ag-Cu-based solder. The shape of the solder particles is formed into 10×10×0.1 (mm), the solder particles are sandwiched between the semiconductor element and the substrate, and the temperature is above 235°C in a hydrogen-nitrogen mixed gas atmosphere with an oxygen concentration of 50ppm. Heating was performed for 3 minutes, the peak temperature was 280° C., and reflux was performed with a total reflux time of 15 minutes. The thickness and metal composition of the protective film formed on the surface were measured by XPS. Furthermore, the porosity was measured by observing the voids in the die-bonded portion through an X-ray apparatus.
Embodiment 3
[0024] A 10×10×0.3 (mm) semiconductor element chip was bonded to a 30×30×0.3 (mm) substrate (nickel-plated copper substrate) by soldering with solder particles. The lead-free solders used are as shown in Table 1, and are those in which P was added to the Sn-In-based solder. The shape of the solder particles is formed into 10×10×0.1 (mm), the solder particles are sandwiched between the semiconductor element and the substrate, and the temperature is above 235°C in a hydrogen-nitrogen mixed gas atmosphere with an oxygen concentration of 50ppm. Heating was performed for 3 minutes, the peak temperature was 280° C., and reflux was performed with a total reflux time of 15 minutes. The thickness and metal composition of the protective film formed on the surface were measured by xps. Furthermore, the porosity was measured by observing the voids in the die-bonded portion through an X-ray apparatus.
[0025] Tables 1-3 show the solder particle composition, the thickness and metal compo...
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Abstract
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