Integrated optic grating interference micro mechanical acceleration sensor and its producing method
An acceleration sensor and grating interference technology, which is applied in the direction of measuring acceleration, optomechanical equipment, speed/acceleration/impact measurement, etc., can solve the problems of small comb gap and comb width, affecting detection accuracy, and large process limitations, etc., to achieve The effect of reducing restrictions, expanding the scope of use, and reducing the difficulty of implementation
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Embodiment 1
[0060] Referring to FIG. 9 , an integrated grating interference micromechanical acceleration sensor of the present invention is produced, and the sensor is composed of a first glass sheet 2 and a silicon sheet as a sensitive element. A metal grating 8 and a metal grating 9 are arranged on the first glass sheet 2 , the width of the grating bars is 5 microns, the pitch of the grating bars is 5 microns, and electrodes 9 and connection terminals 10 are also provided.
[0061] With reference to Fig. 6, described mass block 5 is set on silicon wafer 3, and this mass block 5 is provided with 4 bosses 6 with protective effect, and is plated one deck metal (or silicon) reflection surface 7 at the bottom surface of mass block 5; At least one silicon nitride beam 4 is an elastic structure used to support the mass block (silicon island) 5, the thickness of the beam can be within the range of 0.1-30 microns, the beam 4 is connected to the bottom of the mass block 5, and the beam The other ...
Embodiment 2
[0068] Referring to Fig. 10, an integrated grating interference micromachined acceleration sensor of the present invention is produced. In the present embodiment, only the structure of the support beam 4 is different from that of Embodiment 1. There are support beams around the silicon island (or both sides of the symmetry), and the support beams are about two centerlines of the silicon island (the centerline passes through the silicon island). The center point of the island, and parallel to two sets of parallel sides of the silicon island respectively) Symmetrical, the structure of the silicon wafer and the supporting beam is shown in Figure 7. In this embodiment, the number of supporting beams is at least 2, that is, there is one beam on opposite sides of the mass block; the number of supporting beams can also be 4 or an integer multiple of 4. Concrete preparation method is with embodiment 1.
Embodiment 3
[0070] Referring to Fig. 10, an integrated grating interference micromachined acceleration sensor of the present invention is fabricated. In the present embodiment, only the structure of the support beam 4 is different from that of Embodiment 1. There are support beams around the silicon island (or both sides of the symmetry), and the support beams are asymmetrical about the two center lines of the silicon island, but The center point of the silicon island is symmetrical, and the structure of the silicon wafer and the supporting beam is shown in Figure 8. In this embodiment, the number of supporting beams is at least 2, that is, there is one beam on opposite sides of the mass block; the number of supporting beams can also be 4 or an integer multiple of 4. Concrete preparation method is with embodiment 1.
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