Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method

a film deposition and cleaning technology, applied in the direction of lighting and heating apparatus, cleaning using liquids, instruments, etc., can solve the problems of film quality degradation, critical charging process, and film to have defects

Inactive Publication Date: 2001-12-27
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such incorporation of an impurity can cause degradation of the quality of the film.
Polysilane deposited on the substrate can cause the film to have a defect.
As a result, the charging process has become critical, that is, charging is needed to be performed in a shorter time.
This produces a problem that when no voltage is applied to a certain portion of the surface of the photoreceptor, that portion can have a large influence upon the voltage in neighboring portions, and thus an image defect is produced in that portion.
However, in recent more sophisticated copying apparatuses, it is needed to make a high-quality copy of a document including halftone information such as a picture, and an image defect which is not a significant problem in a line copy can result in a significant problem.
In particular, in a certain type of electrophotographic copying machine, an image defect is visually prominent, and thus the electrophotographic photosensitive drum needs to includes a still smaller number of defects.
However, the above-described conventional cleaning techniques for removing the undesired deposition film or polysilane remaining in the reactor chamber after forming the desired deposition film have the following problems to be solved to meet the requirements in terms of the characteristics of the articles such as a photoreceptor (photosensitive drum with a very large size).
That is, in the conventional techniques in which polysilane is removed by reacting polysilane with ClF.sub.3 gas, the cleaning process needs a long time to remove polysilane to a sufficient degree, and thus it is needed to supply a large amount of ClF.sub.3 and a large amount of electric power.
Furthermore, the vacuum pumping means, in particular, the rotary pump, needs to continuously suck ClF.sub.3 gas for a long time, and...

Method used

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  • Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method
  • Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method
  • Method of cleaning a film deposition apparatus, method of dry etching a film deposition apparatus, and an article production method including a process based on the cleaning or dry etching method

Examples

Experimental program
Comparison scheme
Effect test

example 2

[0136] In Example, 2 the cleaning process was performed in a manner similar to Example 1 except that the cleaning process was completed at the point D, thereby producing electrophotographic photosensitive drums. The evaluation was performed in a similar manner to Example 1, and the results are shown in Table 3.

example 3

[0137] In Example 3, electrophotographic photosensitive drums were produced in a similar manner to Example 1 except that the concentration of the source gas was changed such that the concentration was different as between the cleaning steps before and after stopping the source gas and the high-frequency power, as shown in Table 4. The evaluation was performed in a similar manner to Example 1.

[0138] The cost required for the cleaning was also evaluated (in percentage) relative to the cost for the Comparative Example 1.

[0139] The results are shown in Table 5. Note that the timing of stopping the source gas and the high-frequency power was selected in a manner similar to Example 1.

4 TABLE 4 Concentration Processing Before Concentration Pressure (Pa) Stopping After Stopping Power 100 35% 25% 1800 W

[0140]

5 TABLE 5 Defects External Scattered Appear- Along Line Cleaning Cleaning ance Line Defects Time Cost Quality Example 3 .circle-w / dot. .circle-w / dot. .circle-w / dot. 98% 90% .circle-w / dot...

example 4

[0142] In Example 4, the cleaning process was performed and electrophotographic photosensitive drums were produced in a manner similar to Example 1 except that the internal pressure was changed as shown in Table 6, and the supplying of the source gas and the high-frequency power was stopped at points 2 and 4. In addition to a similar evaluation to Example 1, defects in the films due to abnormal growth were evaluated. The cost required for the cleaning was also evaluated (in percentage) relative to the cost for the Comparative Example 1. The results are shown in Table 7.

Evaluation of Defects in the films

[0143] The surfaces of the obtained electrophotographic photosensitive drums were observed via an optical microscope, and the number and the size of defects in the films due to abnormal growth were evaluated. In Table 7, the evaluation results are represented as follows:

[0144] .circle-w / dot.: The defect density was very low, and a excellent result was obtained.

[0145] .largecircle.: Al...

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Abstract

A method for performing a cleaning process uses a cleaning gas and high-frequency power upon a film deposition apparatus for depositing a film on a substrate placed in a reactor chamber which can be evacuated to a low pressure. Supplying of high-frequency power is temporarily stopped in the middle of the cleaning process, and the cleaning process is restarted by again supplying high-frequency power. This method is capable of effectively removing by-products from the inside of a reactor chamber and makes it possible to form a high-quality deposition film, in particular, a high-quality electrophotographic photosensitive drum.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a method of cleaning a film deposition apparatus or a vacuum processing apparatus, a method of dry etching such an apparatus, and an article production method including a process based on the cleaning or dry etching method. More particularly, the present invention relates to a method of cleaning a film deposition apparatus or a vacuum processing apparatus for forming a deposition film on a substrate to produce an electrophotographic photoreceptor or a semiconductor device such as a solar cell, a line sensor for inputting an image, an imaging device, or a TFT, a method of dry etching such an apparatus, and an article production method including a process based on either one of such methods.[0003] 2. Description of the Related Art[0004] Various deposition films have been proposed for use in an electrophotographic photoreceptor and a semiconductor device such as a solar cell, a line sensor for inputting an image, a...

Claims

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Application Information

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IPC IPC(8): C23C16/44
CPCC23C16/4405Y10S134/902Y10S438/905
Inventor KATAGIRI, HIROYUKISEQI, YOSHIOMATSUOKA, HIDEAKIHITSUISHI, KOJIKARAKI, TETSUYA
Owner CANON KK
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