Method for mounting semiconductor device, as well as circuit board, electrooptic device, and electronic device

Inactive Publication Date: 2005-10-27
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0026] With such a configuration, a short circuit, occurring at the time of bonding, among the plurality of electrodes that are formed on the semiconductor device can be prevented. As a result, the external electrode comprising the convexity and conductive unit of the semiconductor device can surely be coupled to the electrode of the substrate, which improves the coupling reliability.
[0027] Further, the present invention is a circuit board comprising a semiconductor device manufactured by the method of formi

Problems solved by technology

However, with the miniaturization (pitch narrowing) of the electrodes of a driver IC, the size of conductive particles contained in the above conductive bonding material such as ACF and ACP is becoming close to the size of the gap between the electrodes described above.
Therefore, it has become difficult to mount a driver IC using a conductive bonding material.
However, since a resin protrusion made of polyimide has a high elastic modulus lower than a driver IC bonding temperature (high temperature), the resin does not make a transformation at the time of bonding, which has caused a problem of reduction in coupling reliability.
Therefore, in COG bonding, NCF stays in the recess on the resin protrusion top, which may cause poor conduction

Method used

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  • Method for mounting semiconductor device, as well as circuit board, electrooptic device, and electronic device
  • Method for mounting semiconductor device, as well as circuit board, electrooptic device, and electronic device
  • Method for mounting semiconductor device, as well as circuit board, electrooptic device, and electronic device

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[0046] First Embodiment

[0047] The first embodiment of the present invention will now be described in detail referring to the accompanying drawings. In addition, in each of the drawings used in the following description, the scale of each layer, member, or the like is changed as a matter of convenience to show such layer, member, or the like in recognizable sizes.

[0048] Semiconductor device

[0049]FIG. 1A is a partial enlarged top view of a substrate on which a semiconductor element is formed, showing a semiconductor device according to the present invention. FIG. 1B is a cross-sectional view along line A-A in FIG. 1A. FIG. 1C is another cross-sectional view along line B-B in FIG. 1A. In addition, the substrate in the present embodiment can be either a semiconductor substrate such as a silicon wafer on which a number of semiconductor chips are formed or an independent semiconductor chip. Further, in the case of a semiconductor chip, the shape of the chip is not limited to a general ...

Example

[0066] Second Embodiment

[0067] The second embodiment will now be described in detail referring to the accompanying drawings.

[0068] In the method for forming a semiconductor device according to the first embodiment, the conductive unit covering from the electrode 2 and spreading over the surface of the protrusion 4 is formed with a single layer of the first conductive layer 5. In contrast, the second embodiment provides a different method wherein the conductive unit covering from the electrode 2 and spreading over the surface of the protrusion 4 is formed with two layers including the first conductive layer 5 and the second conductive layer 7. In addition, the other details of the method for forming a semiconductor device are the same as those of the first embodiment. Therefore, the same reference numerals are used for the components common to both embodiments and detailed description is omitted.

[0069] First, employing the manufacturing steps shown in FIGS. 2 to 6 of the first emb...

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Abstract

A method of forming a bonded structure comprises the steps of: mounting a semiconductor device having an electrode; a convexity protruding higher than the electrode and formed of a resin; and a conductive unit electrically coupled to the electrode and extending over the surface of the convexity, onto a specific substrate with an intermediary of a bonding material; and mounting the semiconductor device by hot pressing within a temperature range including the glass transition temperature of the resin.

Description

RELATED APPLICATIONS [0001] This application claims priority to Japanese Patent Application No. 2004-130866 filed Apr. 27, 2004 and 2005-008686 filed Jan. 17, 2005 which are hereby expressly incorporated by reference herein in their entirety. BACKGROUND [0002] 1. Technical Field [0003] The present invention relates to a method of forming a bonded structure, as well as a circuit board, an electro-optic device and an electronic device. [0004] 2. Related Art [0005] One conventional coupling method for bonding a driver IC on a substrate of a display device is a known as chip-on-glass (COG) coupling. The COG coupling employs a method wherein, for example, a driver IC is bonded by forming an Au-plated bump on a driver IC and then electrically coupling the bump formed on the driver IC with an electrode terminal formed on a substrate of a display device using a conductive bonding material such as anisotropic conductive film (ACF) and anisotropic conductive paste (ACP) (see Japanese Unexamin...

Claims

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Application Information

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IPC IPC(8): G09F9/00H01L21/60H01L21/603H01L23/485
CPCH01L24/11H01L24/81H01L2224/0231H01L2224/114H01L2224/1147H01L2224/116H01L2224/13099H01L2224/16H01L2224/81801H01L2224/83191H01L2224/83192H01L2224/83193H01L2924/01013H01L2924/01022H01L2924/01029H01L2924/01046H01L2924/01074H01L2924/01078H01L2924/01079H01L2924/01082H01L2924/04941H01L2924/19041H01L2924/19043H01L2924/3025H01L24/13H01L2924/01005H01L2924/01006H01L2924/01024H01L2924/01033H01L2924/0105H01L2924/014H01L2224/13666H01L2224/13144H01L2224/13147H01L2224/13171H01L2224/1319H01L2224/13644H01L2224/13647H01L2224/13655H01L2224/13664H01L2224/13671H01L2224/13684H01L2224/13624H01L2924/0001H01L2224/0401Y10T156/10H01L2924/0665H01L2924/00014H01L2924/15788H01L2924/181H01L2224/05171H01L2224/05624H01L2224/05124H01L2224/05671H01L2224/05647H01L2224/05684H01L2224/05166H01L2224/05147H01L2224/05664H01L2224/05655H01L2224/05644H01L2224/05155H01L2224/05666H01L2224/051H01L2224/05164H01L2224/05144H01L2224/05184H01L2224/056H01L2224/13008H01L2224/13566H01L24/02H01L2924/00H01L2224/02H01L2924/013H01L2924/01023H01L21/52H01L23/12H01L23/48
Inventor TANAKA, SHUICHI
Owner SEIKO EPSON CORP
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