Coating and ion beam mixing apparatus and method to enhance the corrosion resistance of the materials at the elevated temperature using the same
a technology of mixing apparatus and ion beam, which is applied in the direction of vacuum evaporation coating, coating, electrolysis components, etc., can solve the problems of human existence being threatened, low danger, and the selection of the material used in the apparatus for performing the process becoming the most important issue, so as to improve the adhesion and improve the resistance to thermal stresses
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example 1
Analysis of SiC Thin Film Coated Using an Ion Beam Deposition Method
[0079]An SiC thin film was melted and vaporized and was then deposited on Inconel 690 by applying an electric power of 10 kW using an electron beam evaporative deposition method, and then Auger depth profiling was performed. The results of the Auger depth profiling are shown in FIG. 4.
[0080]As shown in FIG. 4, the SiC thin film was deposited on the surface of the Inconel 690, but the surface of the SiC thin film is covered with SiO2, because the SiO2 is easily formed, compared to the SiC. Therefore, difficulties in process control are likely to arise, because the coating process and the ion beam irradiation process are respectively performed in different reaction chambers, and it has been found that the coating process and the ion beam irradiation process must be performed in a single reaction chamber.
experimental example 1
Experiment on Change in Resistance of Thin Film to Sulfuric Acid Solution Corrosion by Ion Beam Irradiation
[0081]Inconel 680H samples were cut to a size of 20 mm×20 mm×5 mm, the entire surfaces thereof were polished to an average surface roughness (Ra) of 50 nm or less, and then SiC was deposited thereon. Next, the samples were put into a sulfuric acid solution having a concentration of 50% at 300° C., and then were corroded for 1 hour, in a state in which test samples were irradiated with an ion beam, and the other samples were not irradiated with an ion beam. After 1 hour had passed, the surface contours of the samples were observed. The results thereof are shown in FIG. 5.
[0082]As shown in FIG. 5, a thin film remains on the surface of the sample irradiated with an ion beam, but the thin film is almost peeled off of the surface of the sample not irradiated with the ion beam. The colors of the surface of sample appear to be different due to the difference in the thickness of the th...
experimental example 2
Experiment on Changes in Resistance to Electrical Etching of Thin Film Due to Ion Beam Irradiation
[0084]A circular SiC thin film having a diameter of 20 mm was deposited on the surface of Hastelloy X, which has a size of 20 mm×20 mm×5 mm and is polished to a surface roughness of 50 nm or less. Next, in the state in which testing samples were irradiated with an ion beam, and the other samples were not irradiated with the ion beam, the thin film reaches the surface of a material not coated with electrodes, and was electrolytically etched by applying a voltage of 4 V and a current of 0.4 A. After the thin film was etched, the surface contours of the samples were observed. The results thereof are shown in FIG. 6.
[0085]As shown in FIG. 6, in the sample not irradiated with the ion beam, a peeling phenomenon in the shape of flakes occurred at the corners of the coating layer of the sample. However, in the sample irradiated with an ion beam, the thin film was spread and the peeling phenomen...
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Abstract
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