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Thermoelectric device

a technology of thermoelectric devices and junction materials, which is applied in the direction of junction materials of thermoelectric devices, etc., can solve the problems of lattice distortion in the si layer, difficulty in realizing a thermoelectric device having high power factor, etc., and achieves the effects of suppressing thermal conductivity, increasing electron density, and high power factor

Inactive Publication Date: 2016-08-18
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a thermoelectric device with improved power factor by using a stacked structure with a Si layer and a SiGe layer. The Si layer is improved in mobility of electrons and holes through lattice distortion caused by a difference in lattice constant between the SiGe layer and the Si layer. The addition of a specified element to the SiGe layer can increase electric conductivity while suppressing a decrease in Seebeck coefficient, further improving the power factor of the thermoelectric device. The stacked structure has high crystallinity and can realize higher power factor with increased electron density and decreased thermal conductivity.

Problems solved by technology

However, even when a hetero-structure including two layers having different band gaps, such as Si / SiGe, is realized, it is difficult to actually realize a thermoelectric device having high power factor.
The stacked structure causes lattice distortion in the Si layer due to a difference in lattice constant between the SiGe layer and the Si layer.

Method used

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Examples

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Effect test

example 1

[0078]In Example 1, a N-type sample exclusive for thermoelectric evaluation was formed and evaluated, in which the sample had characteristics equivalent to those of the thermoelectric device 14 including the stacked thin film 10 according to the first embodiment, and the SiGe layer 2 was doped with Sb. First, the stacked thin film 10 was formed on the substrate 1.

[0079]A single-crystal Si substrate was prepared as the substrate 1. The (100) plane of the substrate 1 was used as a deposition surface. The substrate 1 was washed at a high temperature with a concentrated liquid prepared by adding an alkali or acid to a hydrogen peroxide base and then washed with hydrofluoric acid.

[0080]The stacked thin film 10 was formed on the washed substrate 1. First, the Sb-doped SiGe layer 2 was formed. The thickness of the SiGe layer 2 was 10 nm. The Si:Ge composition ratio by atomic number ratio in the SiGe layer 2 was 70:30. Sb was added at the same time as the deposition. The amount of Sb added ...

example 2

[0082]In Example 2, the Si:Ge composition ratio by atomic number ratio in the SiGe layer 2 of Example 1 was changed to 85:15. Excepting the composition ratio, Example 2 was the same as Example 1.

example 3

[0083]In Example 3, the Si:Ge composition ratio by atomic number ratio in the SiGe layer 2 of Example 1 was changed to 63:37. Excepting the composition ratio, Example 3 was the same as Example 1.

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Abstract

A thermoelectric device includes a semiconductor stacked thin film including a SiGe layer and a Si layer in contact with the SiGe layer. The SiGe has a Si:Ge composition ratio by atomic number ratio within a range of 85:15 to 63:37. The stacked thin film has a plurality of stacked structures each having the SiGe layer and the Si layer.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a thermoelectric device having thermoelectric properties.[0003]2. Description of the Related Art[0004]Thermoelectric devices utilizing thermoelectric properties of materials are investigated. Examples of a thermoelectric device using the Seebeck effect include a power-generating device utilizing a temperature difference between the outside air and human bodies, and a power-generating device utilizing waste heat from an automotive car, an incinerator, a heating device, or the like. Examples of a thermoelectric devices using the Peltier effect include cooling devices for CPU and a laser medium. In particular, the power generating device utilizing a temperature difference attracts attention as an energy harvesting component.[0005]Thermoelectric devices which have been investigated are bulk-type devices using bulk materials such as bismuth-tellurium (BiTe)-based, lead-tellurium (PbTe)-based,...

Claims

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Application Information

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IPC IPC(8): H01L35/26H01L35/22
CPCH01L35/22H01L35/26H10N10/857H10N10/855
Inventor MAEKAWA, KAZUYAASATANI, TAKASHI
Owner TDK CORPARATION
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