Light-emitting device using group III nitride group compound semiconductor
a semiconductor and group iii technology, applied in semiconductors, solid-state devices, lasers, etc., can solve the problems of device insufficient control of driving voltage, warpage and stress in the device, and inability to obtain light with high purity and narrow emission spectrum, etc., to achieve the effect of improving device efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0139]An n-type contact layer (an n+-layer of high carrier concentration) 203, an n-type cladding layer 204, and an n-type optical guide layer 205 may include virtually the same structure as the semiconductor layers in the semiconductor laser 100 of the first embodiment, or the n-type contact layer 103, the n-type cladding layer 104 and the n-type optical guide layer 105, respectively.
[0140]An active layer 206 having a multiple quantum well (MQW) structure may be formed on the n-type optical guide layer 205. The active layer 206 may be formed to comprise thirteen (13) layers by laminating approximately 5 nm in thickness of Al0.95In0.05N quantum barrier layer 2061 and about 5 nm in thickness of Al0.70In0.30N quantum well layer 2062 together alternately. In other words, the active layer 206 may include a multiple quantum well (MQW) structure comprising six (6) pairs of a quantum barrier layer 2061 and a quantum well layer 2062, or comprising 7 quantum barrier layers 2061 and 6 quantum...
second embodiment
[0163]In the second embodiment, the mismatching relaxation layer 2021 may comprise AlN. Alternatively, the mismatching relaxation layer 2021 may be made of binary compounds such as GaN and InN, ternary compounds such as AlGaN, InGaN and AlInN, and quaternary compounds such as AlGaInN. In this case, the mismatching relaxation layer may be formed at a low temperature in which a single crystal does not grow, and its thickness is preferably in a range of 100 Å to 1000 Å.
[0164]A single crystal layer formed on a mismatching relaxation layer may be made of the same material with the same or different composition ratio used to form the mismatching relaxation layer or a different material from that of the mismatching relaxation layer. In this embodiment, the single crystal layer may be made of GaN. Alternatively, the single crystal layer may be made of a ternary compound such as AlGaN, InGaN and ALInN, a quaternary compound such as AlGaInN having an arbitrary composition ratio. A growth temp...
third embodiment
[0172]FIG. 5 illustrates the third embodiment as a group III nitride group compound semiconductor laser 300.
[0173]As shown in FIG. 5, the main characteristics of the semiconductor laser 300 may be as follows:
(1) A MQW active layer 306 (comprising five layers in total, two periods of MQW structure)
[0174](1) A quantum well layer 3062 (Al1-xInxN; x≈0.20, about 5 nm in thickness)[0175](2) A quantum barrier layer 3061 (Al1-yGayN; y≈0.80, about 5 nm in thickness)
[0176]In comparison, the first embodiment may employ only one Al0.15Ga0.85N buffer layer 102 as a buffer layer. However, in this third embodiment, a crystal growth in lateral direction of a buffer layer 302, which have no insulation layer and has two layer structure, may be used to laminate group III nitride group compound semiconductor layers in sequence in the semiconductor laser 300.
[0177]In short, a second characteristic of the semiconductor laser 300 may be used to form a buffer layer 302 as follows:[0178](2) A buffer layer 3...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More