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Pattern-forming method, and radiation-sensitive resin composition

a resin composition and pattern-forming technology, applied in the field of pattern-forming methods and radiation-sensitive resin compositions, can solve the problems of deterioration of resist films, adversely affecting lithography characteristics, and impairing performance, so as to avoid dissociation from molecular chains

Active Publication Date: 2015-10-20
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a method for making patterns on a substrate using a special resin composition. This composition is applied to the substrate and exposed to radiation, then developed using a solution containing a high amount of organic solvent. The pattern-making process involves using a specific type of polymer that has a specific structure. This structure allows the polymer to break down when exposed to acid, resulting in the creation of a pattern on the substrate. The use of this specific polymer and the organic solvent developer solution make the pattern-making process faster and more efficient.

Problems solved by technology

However, due to elution of substances included in a resist into a liquid immersion medium, and the like in liquid immersion lithography, disadvantages have been suggested that adversely affect lithography characteristics by way of: deterioration of the resist film to impair performances thereof; regional changes of a refractive index of the liquid immersion medium due to eluted substances; contamination of the surface of a lens from eluted substances; and the like (see pamphlet of PCT International Publication No. 04 / 068242).

Method used

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  • Pattern-forming method, and radiation-sensitive resin composition
  • Pattern-forming method, and radiation-sensitive resin composition
  • Pattern-forming method, and radiation-sensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[0194]A solution was prepared by dissolving 19.1 g (50 mol %) of a monomer represented by the following formula (M-1) and 10.9 g (50 mol %) of a monomer represented by formula (M-14) in 60 g of 2-butanone, and further adding 0.32 g of dimethylazobisisobutyronitrile thereto. Next, a 200 mL three-necked flask charged with 30 g of 2-butanone was purged with nitrogen for 30 minutes, and thereafter the reaction vessel was heated to 80° C. with stirring. The monomer solution prepared beforehand was added dropwise using a dropping funnel over 3 hrs. The time when dropwise addition was started was assumed to be a start time point of polymerization and the polymerization reaction was carried out for 6 hours. After completion of the polymerization, the polymerization solution was cooled to no greater than 30° C. by water-cooling and the polymerization solution was charged into 600 g of methanol. The white powder precipitated was filtered off. Thus resultant white powder was washed twice with ...

synthesis examples 2 to 15

[0195]Polymers (A-2) to (A-15) were obtained in a similar manner to Synthesis Example 1 except that the monomers specified in Table 1 were blended in the predetermined amount. In addition, Table 1 collectively presents the Mw, Mw / Mn, and yield (%) of the respective polymers obtained, and the content of the structural units derived from the respective monomers in the respective polymers. It should be noted that the monomers used in the synthesis of the polymer (A), and the monomers used are represented by the following formulae.

[0196]

[0197]

TABLE 1MonomerStructuralStructuralStructuralStructuralOtherunit (I)unit (II)unit (III)unit (IV)structural unitamountamountamountamountamountblendedblendedblendedblendedblended(A)(% by(% by(% by(% by(% byPolymertypemole)typemole)typemole)typemole)typemole)SynthesisA-1M-150——M-1450————Example 1SynthesisA-2M-140——M-1550M-1110——Example 2SynthesisA-3M-240——M-1550M-1110——Example 3SynthesisA-4M-240——M-1545M-12 5——Example 4SynthesisA-5M-350——M-1450————Exam...

synthesis example 16

[0200]A solution was prepared by dissolving 35.8 g (70 mol %) of a monomer represented by the following formula (M-17) and 14.2 g (30 mol %) of a monomer represented by the formula (M-18) in 50 g of 2-butanone, and further adding 5.17 g of dimethyl-2.2′-azobisisobutyrate thereto. Next, a 500 mL three-necked flask charged with 50 g of 2-butanone was purged with nitrogen for 30 minutes, and thereafter the reaction vessel was heated to 80° C. with stirring. The monomer solution prepared beforehand was added dropwise using a dropping funnel over 3 hrs. The time when dropwise addition was started was assumed to be a start time point of polymerization and the polymerization reaction was carried out for 6 hours. After completion of the polymerization, the solution was cooled to no greater than 30° C. by water-cooling and transferred to a 2 l separating funnel, and homogeneously diluted with 150 g of n-hexane, followed by addition of 600 g of methanol and the components were mixed. Then 30 ...

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Abstract

A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application is a continuation application of International Application No. PCT / JP2011 / 072296, filed Sep. 28, 2011, which claims priority to Japanese Patent Application No. 2010-225259, filed Oct. 4, 2010. The contents of these applications are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to a pattern-forming method, and a radiation-sensitive resin composition.[0004]2. Discussion of the Background[0005]Miniaturization of structures in various types of electronic devices such as semiconductor devices and liquid crystal devices has been accompanied by demands for miniaturization of resist patterns in lithography processes. Although fine resist patterns having a line width of about 90 nm can be formed using, for example, an ArF excimer laser at present, finer pattern formation is required in the future.[0006]Therefore, pattern-formi...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G03F7/004G03F7/20G03F7/32G03F7/11G03F7/039C08F20/28C08F220/28
CPCG03F7/20C08F20/28G03F7/004G03F7/0046G03F7/0397G03F7/11G03F7/2041G03F7/325C08F2220/283C08F220/283H01L21/0274
Inventor SAKAKIBARA, HIROKAZUHORI, MASAFUMIITO, KOJIKIMURA, REIKOFURUKAWA, TAIICHI
Owner JSR CORPORATIOON