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Preparation method of blue light-emitting diode

A light-emitting diode, blue technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that cannot meet the short-wave requirements of optoelectronic integrated light-emitting, difficult to obtain blue light emission, and unstable luminous properties, etc., to achieve low cost and responsiveness The effect of short time and long service life

Inactive Publication Date: 2007-12-05
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the isoelectronic center defect is a luminescent center
Several issues hinder the application of porous silicon
The first is that the luminous properties are unstable
The second luminous range is limited to red and green light, and it is difficult to obtain blue light emission
[0009] In short, the above-mentioned silicon-based materials can only emit infrared light, red light or green-purple light, and it is difficult to emit blue light, so they cannot meet the short-wave emission requirements of optoelectronic integration.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] N-type single crystal silicon with a resistivity of 30Ω·cm is used as the substrate, and the implantation energy is 50keV (kiloelectron volts), 5×10 16 ions / cm 2 (oz / cm2) of carbon ions; the N-type monocrystalline silicon sample that has been implanted with carbon ions is placed in a tube furnace for annealing. During annealing, the sample is first placed in a quartz boat, and then the quartz boat is placed in the tube In the quartz tube in the type furnace, pass high-purity flowing hydrogen (or nitrogen or argon) for surface passivation, the gas flow rate is controlled at 2500ml / min (ml / min), the annealing temperature is 1100°C, and the annealing time is 20 minutes; use 20V constant voltage instrument to control power supply, and the current density is 70mA / cm 2 Electrochemical corrosion was carried out under the conditions for 10 minutes; the corrosion solution was prepared according to hydrochloric acid: ethanol = 1: 5 parts by weight; the corrosion current was 100m...

Embodiment 2

[0040] N-type single crystal silicon with a resistivity of 50Ω·cm was used as the substrate, and the implantation energy was 20keV (kiloelectron volts), 5×10 16 ions / cm 2 (oz / cm2) of carbon ions; the N-type monocrystalline silicon sample that has been implanted with carbon ions is placed in a tube furnace for annealing. During annealing, the sample is first placed in a quartz boat, and then the quartz boat is placed in the tube In the quartz tube in the type furnace, pass high-purity flowing hydrogen (or nitrogen or argon) for surface passivation, the gas flow rate is controlled at 1000ml / min (ml / min), the annealing temperature is controlled at 800°C, and the annealing time is constant. 80 minutes; use a 50V constant voltage instrument to control the power supply, and the current density is 20mA / cm 2 Electrochemical corrosion was carried out under the conditions for 50 minutes; the corrosion solution was prepared according to hydrochloric acid: ethanol = 1: 3 parts by weight;...

Embodiment 3

[0042] N-type single crystal silicon with a resistivity of 40Ω·cm was used as the substrate, and the implantation energy was 30keV (kiloelectron volts), 5×10 16 ions / cm 2 (oz / cm2) of carbon ions; the N-type monocrystalline silicon sample implanted with carbon ions is placed in a tube furnace for annealing. During annealing, the sample is first placed in a quartz boat, and then the quartz boat is placed in the tube. In the quartz tube in the type furnace, the surface is passivated by flowing high-purity hydrogen (or nitrogen or argon), the gas flow rate is controlled at 1500ml / min (ml / min), the annealing temperature is 950°C, and the annealing time is 60 minutes; use 30V constant voltage instrument to control power supply, and the current density is 100mA / cm 2 Electrochemical corrosion was carried out under the conditions for 30 minutes; the corrosion solution was prepared according to hydrochloric acid: ethanol = 1: 1 parts by weight; the corrosion current was 50mA / cm 2 , an...

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Abstract

The invention provides a preparation method of blue light emitting diode and includes the following steps: a. implant the carbon ions with its energy between 20keV and 50keV and 5 multiplied by 10 to the power 16 ions / Sq cm into the N-type single crystal of silicon with its resistivity between 30 omega multiplied by centimeter and 50 omega multiplied by centimeter; b. put the N-type single crystal of Si implanted by carbonium ions into the tubular furnace, input the hydrogen or nitrogen gas or argon gas into it and passivate it for between 20 minutes and 90 minutes at the temperature of between 800deg.C and 1100deg.C; c. carry out the electrochemical corrosion for between 10 minutes and 50 minutes at constant pressure and with the current density between 20mA / Sq cm and 100mA / Sq cm, treat it with normal silicon plane and get the product. The gas flow of the hydrogen or nitrogen gas or argon gas is between 1000ml / min and 2500ml / mim and the corrosive liquor of the electrochemical corrosion is composed of the hydrochloric acid: grain alcohol=1:1-5, in amount of weight.

Description

technical field [0001] The present invention relates to electronic light-emitting devices, more specifically to a light-emitting diode. Background technique [0002] Blue light is one of the three primary colors in a full-color display. And it is of great significance to information transmission and information processing. It is not only a necessary technology for silicon-based full-color display, but also can improve the capacity of optical storage devices and the resolution of laser printers and laser scanners. Therefore, for a long time, people have been persistently conducting research on blue light materials. The research and development of blue diode LEDs started in the early 1970s, and was started by H.P.Marvska and Pankove in the United States who used the halide crystal growth method to grow GaN. Thereafter, Japan's Matsushita Institute of Technology conducted research and development, but it did not reach the application level. Japan's Toyoda Gosei Corporation ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 李玉国薛成山王强史礼伟
Owner SHANDONG NORMAL UNIV
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