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Liquid crystal display device and producing method thereof

A technology for a liquid crystal display device and a manufacturing method, which are applied in the directions of photolithographic process exposure devices, transistors, static indicators, etc., can solve the problems of the flatness damage of the array substrate 1, the reduction of productivity, the reduction of the yield rate, etc., and achieve the pre-programming process The effect of short cycle times and high productivity

Active Publication Date: 2008-04-30
光电科学有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] As mentioned above, in order to manufacture the active array type amorphous silicon TFT array substrate, five or four photomasks are currently required, which is the main reason for the prolongation of the lead time or the decrease of the yield rate.
In addition, the prior art shown in Patent Document 2 reduces the number of required photomasks to three, but additionally requires a process for water repellency treatment and a process for removing water repellency, which is a factor for lowering productivity.
In addition, because the planarization film underlying the pixel electrode 11A is exposed to the half-tone process, the flatness of the surface of the array substrate 1 is damaged, resulting in a high possibility of deterioration of display performance such as contrast reduction.
However, in the prior art shown in Patent Document 3, it is necessary to add a new chemical mechanical polishing process. In addition, it is difficult to maintain the flatness of the glass substrate in the grinding process of a large-area glass substrate with a side length of more than 1 m, and Patent Document 2 Also, halftoning has the potential to adversely affect display performance

Method used

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  • Liquid crystal display device and producing method thereof
  • Liquid crystal display device and producing method thereof
  • Liquid crystal display device and producing method thereof

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Embodiment 1

[0041] First, if figure 1 As shown in (A), chromium, molybdenum, tantalum, aluminum, copper, or alloys or laminates thereof are formed as the first metal film 2 on one surface of the glass substrate 1 using a film forming apparatus such as a sputtering apparatus. Next, a photoresist is coated on one surface of the first metal film 2, and a first photomask is used to form figure 1 (B) Photoresist pattern 3 shown. Then, after etching the first metal film 2 using the photoresist pattern 3 as a mask, the photoresist pattern 3 is removed to form figure 1 (C) Gate film 2A shown.

[0042] Then use a plasma CVD device or a sputtering device such as figure 2 (C) shows covering the first silicon nitride film 4 as the gate insulating layer, the first silicon film 5 as the channel of the transistor, and the second silicon film 6 doped with N-type impurities. In addition, chromium, molybdenum, tantalum, aluminum, copper, or alloys or laminates thereof are coated as the second metal...

Embodiment 2

[0047] As known from Embodiment 1, in the present invention, the pixel electrode does not need to be patterned, and the conductive film for the pixel electrode is physically and electrically separated by using the deep groove 15 formed in the photosensitive acrylic resin film 10. That's it. Therefore, when a high-reflectance metal such as aluminum or aluminum alloy or silver or silver alloy is used as the conductive thin film for the pixel electrode, the pixel electrode (reflective electrode) of a reflective liquid crystal display device can be obtained. These metals are usually coated by sputtering, and their film thickness is equal to that of a transmissive transparent electrode, generally about 0.1 μm. This also includes the meaning of avoiding a decrease in reflectance due to the crystal growth phenomenon accompanying an increase in film thickness.

[0048] However, although not shown in the figure, in order to avoid specular reflection, the substrate of the pixel electro...

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Abstract

The present invention provides a liquid crystal display device and method for manufacturing the same, to reduce the manufacturing cost, by providing a TFT array substrate used for the liquid crystal display device, with the number of photolithographic processes and the number of photomask which are less than that of conventional one. The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film is used to make contacts, taper patterns required for general through holes are formed simultaneously with a fine pattern formed in a light shielding area that is tapered more approximately to vertical, using a photomask with phase-shift effect. Thus the pixel electrode pattern can be separated without using lithography process in subsequent processes.

Description

【Technical field】 [0001] The invention relates to a flat display device such as a liquid crystal display device with a TFT array substrate and a manufacturing method thereof. 【Background technique】 [0002] In recent years, the development of substitute products for CRT flat-panel display devices has been very popular. So far, liquid crystal display devices, which have been developed from small-sized mobile displays to large-sized TV displays, are widely popular. [0003] A liquid crystal display device is an electro-optical device that sandwiches liquid crystals between two substrates. Active liquid crystal display devices with excellent display performance widely use array substrates. The signal lines and scanning lines are formed in a grid pattern, and thin film transistors (hereinafter abbreviated as TFTs) using semiconductor thin films such as amorphous silicon are provided as switching elements at intersections of the signal lines and scanning lines. In order to manuf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/136G02F1/1335G02F1/133H01L29/786G03F7/20
CPCH01L27/1214G02F2001/136236H01L29/78633G02F1/136227H01L27/124H01L27/1288G02F1/136236
Inventor 堀野滋和董畯豪曾贤楷
Owner 光电科学有限责任公司