Supercharge Your Innovation With Domain-Expert AI Agents!

Method for making embedded resistor in semiconductor wafer

A technology of embedded resistors and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of IO speed delay, damage to semiconductor chip performance, etc., to prevent delay and reduce occupied space , Improve the effect of packaging density

Active Publication Date: 2009-08-26
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the IO speed is delayed, which damages the performance of the entire semiconductor chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for making embedded resistor in semiconductor wafer
  • Method for making embedded resistor in semiconductor wafer
  • Method for making embedded resistor in semiconductor wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] In this embodiment, the embedded resistors are fabricated in the semiconductor wafer during the process of forming solder bumps on the semiconductor wafer. Its production process is as follows:

[0077] Carry out sequentially on the semiconductor wafer 1 that has been formed with the semiconductor device device structure and the aluminum pad 2:

[0078] 1) if figure 1 As shown, a benzocyclobutene material is coated as a passivation layer 3, followed by exposure, development, and curing in sequence;

[0079] 2) if figure 2 Shown, with physical vapor deposition method, sputter deposition multilayer metal film layer chromium / copper (Cr / Cu) layer 4, wherein, first deposit chromium layer 41, deposit copper layer 42 then;

[0080] 3) if image 3 As shown, the first photoresist layer 5 is coated, exposed, developed, and firm film layer is formed to form a photoresist pattern for the next process step;

[0081] 4) if Figure 4 As shown, the metal film layer 6 (copper lay...

Embodiment 2

[0091] In this embodiment, in the process of forming gold bumps on the semiconductor wafer, the embedded resistor is manufactured in the semiconductor wafer, and the manufacturing process is as follows:

[0092] Carry out sequentially on the semiconductor wafer 1 that has been formed with the semiconductor device structure and the aluminum pad 2:

[0093] 1) can refer to embodiment 1 figure 1 As shown, coating benzocyclobutene or polyimide material as passivation layer 3, and then sequentially carry out exposure, development, curing;

[0094] 2) can refer to embodiment 1 figure 2 As shown, it is only different from the deposited material of embodiment 1. This embodiment uses the physical vapor deposition method to sputter deposit a multilayer metal film layer titanium tungsten / gold (TiW / Au) layer 4', wherein, Deposit titanium and tungsten first, then deposit gold;

[0095] 3) with reference to Example 1 image 3 As shown, the first photoresist layer 5 is coated, exposed, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a manufacturing method for the embedding resistor in the semiconductor wafer, in particular to manufacturing the embedding resistor in the process of forming the conductive convex point on the semiconductor wafer. In the process an etching step of the top sub-metal layer of the multi-conductive layer in the area forming the embedding resistor is added, and the resistivity of the metal layer after removing the top sub-metal layer is more than that of the metal layer with the top sub-metal layer, and then the resistor which is covered by a passive layer in the later steps is formed in the semiconductor wafer, thus forming the embedding resistor which replaces the terminal resistor arranged on the package printed circuit board of semiconductor devices, increasing the packaging density and ensuring no damage to the properties of high speed semiconductor devices.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of an embedded resistor in a semiconductor wafer. Background technique [0002] In the current semiconductor industry, it is necessary to form conductive bumps on a substrate, especially solder bumps on a semiconductor device. Solder bumps are usually formed on the integrated circuit chip, thereby forming a flip-chip semiconductor chip (Flip chip), and the current general-purpose semiconductor chip flip-chip bonding technology quickly replaces the chip face-up with a conductive wire to connect the chip traditional wire bonding techniques on the individual pads. [0003] However, when a high-speed semiconductor device is mounted on a printed circuit board (PCB), a large number of resistors need to be placed near the Input Output (IO) as a terminal resistor, thereby forming a filtering structure that prevents the operating speed delay of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60
CPCH01L24/11H01L2224/11H01L2924/14H01L2924/00H01L2924/00012
Inventor 丁万春吴明鸿张璋炎
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com