Unlock instant, AI-driven research and patent intelligence for your innovation.

High-purity implanting planar array microelectrode and its production

A planar array and manufacturing method technology, which is applied in the fields of electrodes, artificial respiration, physical therapy, etc., can solve the problems of increasing the density of microelectrode arrays, complex manufacturing process, and difficult realization, so as to improve the stimulation or recording effect, simple manufacturing process, and Ease of mass production

Inactive Publication Date: 2009-12-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing problem is that when making a high-density microelectrode array, the electrode area will increase exponentially. On the basis of maintaining the original electrode area, increasing the density of the micro-electrode array, the wiring problem becomes a difficult point
Someone proposed to control the electrodes by making organic field effect transistors (organic field effect transistors) and adopting the method of matrix addressing, so that the micro-electrode matrix with M×N distribution can be controlled only by M+N wires instead of M×N wires [Dara Feili, et al. "Flexible organic field effect transistors for biomedical microimplants using polyimide and parylene C as substrate and insulator layers", J.Micromech.Microeng., 2006, 16: 1555-1561], although this method reduces the number, but the production process is complicated and it is difficult to realize

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-purity implanting planar array microelectrode and its production
  • High-purity implanting planar array microelectrode and its production
  • High-purity implanting planar array microelectrode and its production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The specific characteristics of the high-density implantable planar array microelectrode manufacturing method provided by the present invention are further described below in conjunction with the accompanying drawings:

[0019] 1) The silicon wafer 1 is cleaned by a conventional semiconductor process cleaning method, and an aluminum film 2 with a thickness of about 1 micron is prepared by evaporation on the surface, as a sacrificial layer for electroplating conductive structures and release ( figure 1 );

[0020] 2) Baking the silicon wafer at 120°C for 20 minutes, spin-coating 6809 photoresist (3000 rpm, 30 seconds) on the aluminum film layer of the silicon wafer, and pre-baking at 80°C for 20 minutes;

[0021] 3) Photolithography, sputtering Ti / Pt / Ti (2500 ), combined with the Lift-off process to form the electrode stimulation site or recording site metal layer 3 ( figure 2 );

[0022] 4) Spin-coat photosensitive polyimide Durimide 7510 (3000 rpm, 30 seconds), ma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-density implanted planar array microelectrode and its manufacturing method. The recording site and its connecting wires are distributed between different insulating layers, and a through-hole structure is made on the insulating insulating layer, and the metal connection structure is formed in the through-hole by the electroplating process, so as to realize the stimulation site or recording of the electrodes located on the upper and lower sides of the insulating insulating layer The connection between the site and its connecting wire; after the electroplating process, the upper surface is polished by chemical polishing to ensure a good electrical connection between the electroplated metal column and the upper sputtered metal layer. The fabrication method provided by the invention can fabricate array microelectrodes with a higher density than conventional single-layer wiring design per unit area, and realize higher selective stimulation or recording of implanted array microelectrodes.

Description

technical field [0001] The invention relates to a method for manufacturing a high-density implanted planar array microelectrode, which can be applied to the fields of neurological disease treatment, neurobiological basic research and the like, and belongs to the field of implanted microelectrodes. Background technique [0002] Neural engineering system is currently a very active and rapidly developing research field, such as brain-computer interface, neural prosthesis and other issues have received more and more attention. In a neuroengineered system, the most fundamental and critical part is the neuro-electronic interface, the electrodes. According to different objects of action and application goals, people have successively researched and developed various forms of implantable microelectrodes, including hoop-shaped microelectrodes, needle-shaped array microelectrodes, planar array microelectrodes, and sieve-shaped microelectrodes. Among them, the planar array microelectr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): A61N1/04A61N1/36
Inventor 李刚孙晓娜周洪波姚源赵建龙
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI