Method for making gallium nitride based laser tube core using face-down bonding technique

A gallium nitride-based, laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems that affect the working performance and life of the die, and the heat dissipation effect is not good.

Inactive Publication Date: 2009-12-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

This preparation method does not have a good heat dissipation ef

Method used

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  • Method for making gallium nitride based laser tube core using face-down bonding technique
  • Method for making gallium nitride based laser tube core using face-down bonding technique
  • Method for making gallium nitride based laser tube core using face-down bonding technique

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Embodiment Construction

[0025] See first figure 1 As shown, this is a cross-sectional view of a gallium nitride-based laser die structure. The manufacturing process is to epitaxially grow a GaNN-type electrode contact layer 11 and an N-type AlGaN optical confinement layer 12 on a sapphire substrate 10 by using the MOCVD method. N-type GaN waveguide layer 13 , light emitting active region 14 , P-type GaN waveguide layer 16 , P-type AlGaN optical confinement layer 16 and P-type GaN electrode contact layer 17 . see again figure 2 As shown, the width of the die of the laser is designed to be 250 microns, the structure of the gallium nitride-based laser die and the size of the corresponding die division channel are designed, and the designed N-type electrode contact area and division are made using ion beam etching technology. The channel area is etched to the N-type GaN electrode contact layer, and then a layer of silicon dioxide insulating film 20 with a thickness of 0.2 microns is deposited on the su...

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Abstract

This invention relates to reverse welding technique to process gallium nitride laser tube core method, which comprises the following steps: growing orderly electrode contact layer, light limit layer, waveguide layer, lighting source area, waveguide layer, light limit layer and electrode contact layer on underlay; etching electrode contacting layer and processing P shape Ohm contacting electrode; reducing underlay thickness; dividing laser tube core; using reverse welding technique to weld divided gallium nitride laser tube core N shape ohm electrode layer and supportive part and metal welding materials together; forming P shape electrode leading hole from supportive part back hole to isolation layer of earth silicon and silicon nitride; coating metal layer on supportive back and leading tube core P shape electrode to form one reverse gallium nitride laser tube core.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing gallium nitride-based laser tube cores by flip-chip welding technology. Background technique [0002] III-V GaN-based compound semiconductors and their quantum well structure lasers (LD) have broad application prospects in the fields of increasing the optical storage density of information, laser printing, deep-sea communications, and atmospheric environment detection. If gallium nitride-based lasers replace The recording density of the current DVD optical head can reach 2-3 times the current one. If the printer uses GaN-based lasers, its resolution can be increased from the current standard 600dpi to 1200dpi. The deep sea has a window in the blue-ray range, GaN Base lasers can be used for deep-sea detection and communication, which has far-reaching significance in the field of national defense. In addition, blue lasers can also be used for short...

Claims

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Application Information

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IPC IPC(8): H01S5/00
Inventor 张书明杨辉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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