Close-shaped magnetic multi-layer film and preparation method and use thereof

A multi-layer film and magnetic technology, applied in the direction of spin-exchange coupled multi-layer film, magnetic film to substrate, magnetic layer, etc., can solve the problem of complex structure design and preparation of memory cells, increasing free layer inversion issues such as field and power consumption

Inactive Publication Date: 2007-07-18
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the geometric structure of memory cells (such as bit layers and other pinning layers) used in the prior art adopts non-closed structures, such as rectangles, ellipses, etc., this structure will lead to high density and small size memory cells. Larger demagnetization field and shape anisotropy, this defect will undoubtedly increase the reversal field and power consumption of the free layer, and also bring many adverse effects on the uniformity and consistency of the magnetoelectric properties of the memory cell, And it brings a lot of structural complexity to the design and preparation of the memory unit. For example, in order to reduce the demagnetization field, a sandwich composite bit layer and a bottom pinning layer are generally used.

Method used

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  • Close-shaped magnetic multi-layer film and preparation method and use thereof
  • Close-shaped magnetic multi-layer film and preparation method and use thereof
  • Close-shaped magnetic multi-layer film and preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Example 1. Preparation of non-pinning closed rectangular annular magnetic multilayer film

[0051] Using high-vacuum magnetron sputtering equipment in the 1mm thick SiO cleaned by conventional methods 2 On the Si substrate, the lower buffer conductive layer Au with a thickness of 2nm, the hard magnetic layer (HFM) Co with a thickness of 3nm, the intermediate layer (I1) Cu with a thickness of 1nm, and the soft magnetic layer (SFM) with a thickness of 1nm were deposited sequentially. Co and a cap layer Ru with a thickness of 4 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; pressure of high-purity argon gas for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; Rate; when depositing hard and soft magnetic layers, a 500e plane induced magnetic field is applied. The deposited magnetic multilayer film adopts the micro-processing technology in th...

Embodiment 2

[0052] Example 2, Preparation of non-pinning closed rectangular ring-shaped magnetic multilayer film

[0053] Using high-vacuum magnetron sputtering equipment in the 1mm thick SiO cleaned by conventional methods 2 On the Si substrate, the lower buffer conductive layer Au with a thickness of 2nm, the hard magnetic layer (HFM) Co with a thickness of 3nm, the intermediate layer (I1) Cu with a thickness of 1nm, and the soft magnetic layer (SFM) with a thickness of 1nm were deposited sequentially. Co and a cap layer Ru with a thickness of 4 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; Rate; when depositing hard magnetic layer and soft magnetic layer, apply a 50Oe plane induced magnetic field. The deposited magnetic multilayer film adopts the micro-processing techno...

Embodiment 3

[0054] Example 3, Preparation of a pinned closed rectangular ring-shaped magnetic multilayer film

[0055] Using high vacuum magnetron sputtering equipment to clean 0.8mm thick Si / SiO by conventional methods 2 The lower buffer conductive layer Au with a thickness of 2 nm, the antiferromagnetic pinning layer (AFM) IrMn with a thickness of 10 nm, and the pinned magnetic layer (FM1) Co with a thickness of 3 nm were sequentially deposited on the substrate. 90 Fe 10 ; then deposit 1nm of Al, the insulating layer formed through plasma oxidation for 50 seconds as the intermediate layer (I2); on this intermediate layer, the free soft magnetic layer (FM2) Co with a thickness of 3nm is deposited successively 90 Fe 10 and a capping layer of Au with a thickness of 2 nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rm...

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Abstract

A magnetic multilayer film of closed form is prepared as making cross section of magnetic multilayer film be close rectangular ring or oval ring with rectangular internal ring width of 10-100000nm, rectangular external ring width of 20-200000nm, ratio of width to length on rectangular internal ring of 1:1-5, short axle of oval internal ring of 10-100000nm, ratio of short axle to long axle of 1:1.1-5 and oval external ring short axle of 20-200000nm; classifying said magnetic multilayer film to be pining closed form and non-pining closed form according to their formed material.

Description

technical field [0001] The invention relates to a closed-shaped magnetic multilayer film, its preparation method, and its application in devices. Background technique [0002] Since Baibich et al first observed the giant magnetoresistance (Giant Magneto Resistance, GMR) effect in the magnetic multilayer film system in the late 1980s, the research on the magnetic multilayer film system has been a topic of general concern to researchers. Because the GMR effect has a high magnetoresistance ratio, it can be widely used in magnetoresistance sensors, magnetic recording and reading heads, and other fields. Devices made of GMR not only have excellent characteristics such as high sensitivity, small size, and low power consumption, but can also bring many new features such as radiation resistance and non-volatile information storage. In particular, the application of the GMR effect to magnetic recording and reading heads has brought a profound revolution to the entire field of inform...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32H01F10/12H01F41/14H01L43/08H01L43/12G11C11/16G11B5/39
Inventor 姜丽仙马明韩宇男覃启航魏红祥韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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