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Method for preparing polycystalline thin film material of ferroferric oxide

A technology of ferric tetroxide and thin film materials, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as incompatibility, influence, and inability to solve the problem of thin film material preparation

Inactive Publication Date: 2007-07-25
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned preparation methods reported previously all prepared Fe under the condition of substrate heating (higher than 300°C). 3 o 4 Thin film materials cannot solve Fe 3 o 4 The low temperature (room temperature) preparation problem of thin film materials is not compatible with the current microelectronics process, which seriously affects Fe 3 o 4 Wide application of thin film materials in the field of spintronics

Method used

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  • Method for preparing polycystalline thin film material of ferroferric oxide
  • Method for preparing polycystalline thin film material of ferroferric oxide
  • Method for preparing polycystalline thin film material of ferroferric oxide

Examples

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Embodiment 1

[0022] The facing target reactive sputtering method is adopted, in which high-purity Fe with a purity higher than 99.99% is selected as the target material, and the background vacuum of the vacuum system of the sputtering device is required to be 1.0×10 -5 ~6.0×10 -6 Pa range; reaction gas (O 2 ) flow rate to the sputtering gas (Ar) flow ratio is required to be in the range of 1% to 5%; to ensure that the sample is not overoxidized to form γ-Fe 3 o 2 . Sputtering power 20W / cm 2 ; Use a glass slide to clean the substrate so that no obvious particles exist on the surface.

[0023] After starting up, wait for the back vacuum of the vacuum system to be 6.0×10 -6 Pa, put Ar and O mixed in a ratio of 100:2 into the vacuum chamber 2 ; After the air pressure in the vacuum chamber is stable, the sputtering purity is higher than 99.99%. Apply a negative high voltage of 1200V on the Fe target to the gas in the vacuum chamber to form a glow discharge. After the glow is stable, afte...

Embodiment 2

[0027] The general magnetron sputtering method is adopted, in which high-purity Fe with a purity higher than 99.99% is selected as the target material, and the background vacuum of the vacuum system of the sputtering device is required to be 2.0×10 -5 ~6.0×10 -6 Within the range of Pa; the ratio of the flow rate of the reaction gas to the flow rate of the sputtering gas is required to be in the range of 1% to 6%; to ensure that the sample is not overoxidized to form γ-Fe 3 o 2 . Sputtering power 15W / cm 2 ; Use the glass slide to clean the substrate.

[0028] After starting up, wait until the back vacuum of the vacuum system is 1.0×10 -5 After Pa, Ar and O mixed in a ratio of 100:4 were introduced into the vacuum chamber. 2 ; After the air pressure in the vacuum chamber is stable, the sputtering purity is higher than 99.99%. A negative high voltage of 800V is applied to the Fe target, and the sputtering current is 0.5A. The gas in the vacuum chamber forms a glow discharge...

Embodiment 3

[0031] The target-facing reactive sputtering method is adopted, and the basic steps are the same as those in Example 1. The substrate is a polished silicon wafer or a glass slide, and an ultrasonic cleaner is used to clean the substrate conventionally. The target material is a high-purity Fe target with a purity higher than 99.99%. After starting up, wait for the back vacuum of the vacuum system to be 6.0×10 -6 After Pa, a mixture of Ar and O in a ratio of 100:1 was introduced into the vacuum chamber. 2 . After the air pressure in the vacuum chamber is stabilized, a negative high voltage of 1000V is applied to the sputtering Fe target, and the sputtering current is 0.2A to form a glow discharge in the vacuum chamber. Pre-sputter for 20 minutes, and after the glow is stable, open the substrate shutter to deposit the film. After 40 minutes of sputtering, the substrate shutter, sputtering power supply and gas flow meter were turned off. After the samples were naturally cooled...

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Abstract

This invention relates to a method for preparing polycrystalline Fe3O4 thin film material. The method is target facing sputtering method or magnetron sputtering method. The target material is high-purity Fe with purity higher than 99.99%. The background vacuum degree of the sputtering device vacuum system is higher than 1.0*10-5 Pa. The flux ratio of the reactive gas to the sputtering gas is lower than 5%. The sputtering power is 15-20 W / cm2. The polycrystalline Fe3O4 thin film material has polycrystalline structure, and the grain sizes are uniform. In the X-ray photoelectron spectroscopy of the material, the characteristic peak of Fe2+ is located at 709 and 723 eV, and the Fe 2p1 / 2 and Fe 2p3 / 2 peaks are broaden. The characteristic peak of Fe3+ located at 719 eV does not occur. The resistance of the Fe3O4 thin film with thickness of 10-1120 nm gradually increases with the decrease of the thickness. At room temperature, when the thickness of the thin film is decreased to 10 nm, the resistance increases by nearly 4 orders of magnitude, and Verwey transformation is not observed. The relationship between the resistance and the temperature satisfies inter-particulate tunneling model: log rou ~ T-1 / 2.

Description

technical field [0001] The invention belongs to the preparation of functional materials, in particular to a preparation method of polycrystalline ferric oxide thin film material. Background technique [0002] Inhomogeneous nanomagnetic system, such as antiferromagnetically coupled magnetic multilayer film [Phys.Rev.Lett., 61, 2472 (1988)], magnetic metal-nonmagnetic metal [Phys.Rev.Lett., 68, 3745 ( 1992)], magnetic metal-insulator particle thin film system [Mater.Sci.Eng.B, 31, 219(1995) and Phys.Rev.Lett., 76, 475(1996)] and magnetic tunnel junction [J.Magn. The giant magnetoresistance (GMR) research in Magn.Mater, 151, 403 (1995)] has gradually formed a new interdisciplinary subject—spintronics (or called magnetoelectronics) [Physics Today, APRIL, 26 (1995)]. Since the GMR value is proportional to the spin polarizability of ferromagnetic materials [Phys. Rev. B, 53, R11927 (1996) and 39, 6995 (1989)], a high spin polarizability means a significant GMR effect. [0003] ...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/54C23C14/08
Inventor 白海力刘晖申俊杰米文搏姜恩永
Owner TIANJIN UNIV
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