Nano poly crystal silicon-aluminum nitride diaphragm silicon single crystal substrate base for high temperature mechanics magnitude sensor
A technology of aluminum nitride film and polysilicon, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult cup making process, poor silicon thermal matching, large mechanical hysteresis, etc., and achieve small thermal drift and breakdown resistance Good performance, small non-linear effect
Inactive Publication Date: 2007-07-25
井叶之
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Problems solved by technology
However, when ceramic sheets are used as elastomers, the mechanical hysteresis is large, the cup-making process is difficult, and the matching with silicon heat is poor.
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[0005] 1. Using a DC magnetron sputtering apparatus to reactively sputter an aluminum nitride film on a commercially available (001) silicon single wafer. The target is made of pure aluminum (99.9%). The silicon single wafer is n-type or p-type, and the doping concentration or resistivity is suitable for anisotropic etching. Generally, the n-type is selected to be less than a few ohms.cm, and the p-type is selected to be more than a few ohms.cm. During sputtering, the reaction chamber was fed with argon and nitrogen (volume ratio 4:1, total pressure 4×10 -1 Pascal, controlled by a gas flow controller). Argon is the sputtering gas and nitrogen is the reactive gas. During sputtering, the substrate should be heated above 150°C (film formation on a hot silicon single wafer is beneficial to improve the adhesion of aluminum nitride films).
[0006] The aluminum nitride film obtained by reactive sputtering should be an insulating film, and its insulation can be directly detected b...
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Abstract
In sensor for mechanical quantity, aluminum nitride is utilized as dielectric isolation membrane between force sensitive resistance and elastic membrane of silicon single-crystal (SSC) in [001] crystal orientation. Since coefficients of thermal expansion between aluminum nitride and silicon are near, large thermal stress will not be introduced. Force sensitive resistance can be prepared on AlN membrane directly instead of prepared on n type silicon. Since there is no p-n junction, thermal drift and electricity drift of sensor are improved greatly so that the sensor can be used under high temperature. SSC as material of elastic membrane is adopted in the invention. Comparing with sapphire, SSC possesses better elasticity, small mechanical hysteresis, better heat match etc. Using reactive sputtering and aluminum abductive technique obtain Nano polysilicon. Photoetching polysilicon forms force sensitive resistance bar. Other procedure is identical to traditional technique.
Description
Technical field: [0001] The product involved in the invention is a nanometer polysilicon-aluminum nitride diaphragm-silicon single crystal substrate. This product can be used for the manufacture of high temperature mechanical quantity sensors. The main point is to use aluminum nitride for insulation and isolation between the force sensitive resistor strip and the silicon elastic film. The thermal expansion coefficient of aluminum nitride is close to that of silicon, with high adhesion and good breakdown resistance. Because there is no p-n junction and the force sensitive resistor has no reverse leakage, the mechanical quantity sensor manufactured by the product of the present invention has good characteristics (small electric drift, small thermal drift, and small nonlinearity). technical background: [0002] At present, ordinary diffused silicon pressure sensors basically use [001] silicon single crystal as the elastic body, and the silicon cup is prepared by anisotropic e...
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Login to View More IPC IPC(8): H01L29/84H01L29/12
Inventor 井叶之潘国峰孙以材
Owner 井叶之