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The method for making piezoelectric porcelain transformer

A technology of piezoelectric ceramics and manufacturing methods, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., can solve the problem of large piezoelectric anisotropy, The problems of large coercive field and high Curie point of the tetragonal phase achieve the effect of improving the comprehensive performance

Inactive Publication Date: 2007-08-01
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Lead titanate (PbTiO 3 ) has become the preferred material for piezoelectric ceramic transformers due to its high Curie point, low dielectric constant, and large piezoelectric anisotropy, but PbTiO 3 Ceramics have high grain boundary energy, large tetragonal coercive field, and large lattice anisotropy, and are difficult to prepare by conventional techniques, especially difficult to sinter into porcelain and perform sufficient artificial polarization.
PbTiO can be improved by proper doping 3 The performance of piezoelectric ceramic materials, however, the doping modification of the prior art improves Qm, Kp and d 33 value will decrease

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Preparation of Ceramic Materials by Oxide Solid State Reaction

[0023] (1) Prepare ceramic powder: adjust the Zr / Ti ratio (0.52:0.48) in PZT to obtain a highly active PZT ceramic material at the quasi-isomorphic phase boundary (MPB), and use it for solid solution to adjust the molar ratio of PZN and PZT (0.2: 0.8) make its fault tolerance factor in 0.9-1.1; use MnO 2 , Sb 2 o 3 、Cr 2 o 3 Doping PZN-PZT ceramic powder, the doping amount accounted for 1.0wt%, 0.5wt%, 0.5wt% of the total amount of ceramic powder;

[0024] (2) The ceramic powder is pressed under a pressure of 50MPa; the piezoelectric coefficient d is obtained 33 =421 PC / N, electromechanical coupling coefficient Kp=0.57, relative permittivity ε r =2310, mechanical quality factor Qm=507, dielectric loss tanδ=0.004, time stability and temperature stabilityτ of resonance frequency fr =90(10 -6 / ℃) ceramic sheet;

[0025] (3) Burning silver electrodes;

[0026] (4) Polarize the pressed ceramic sheet ...

Embodiment 2

[0031] Preparation of Ceramic Materials by Oxide Solid State Reaction

[0032] (1) Prepare ceramic powder: adjust the Zr / Ti ratio (0.47:0.44) in PZT to obtain a highly active PZT ceramic material at the quasi-isomorphic phase boundary (MPB), and use it to form a solid solution with it to adjust the molar ratio of PZN and PZT (0.1: 1) Make its fault tolerance factor 0.9-1.1; use MnO 2 , Sb 2 o 3 、Cr 2 o 3 Doping PZN-PZT ceramic powder, the doping amount accounts for 1.5wt% MnO of the total ceramic powder 2 , 0.1wt% Sb 2 o 3 and 0.9 wt% Cr 2 o 3 ;

[0033] (2) The ceramic powder is compressed under a pressure of 20MPa; the piezoelectric coefficient d is obtained 33 =412 PC / N, electromechanical coupling coefficient Kp=0.58, relative permittivity ε r =2280, mechanical quality factor Qm=517, dielectric loss tanδ=0.003, time stability and temperature stabilityτ of resonance frequency fr =90(10 -6 / ℃) ceramic sheet;

[0034] (3) Burning silver electrodes;

[0035] (4)...

Embodiment 3

[0040] Preparation of Ceramic Materials by Oxide Solid State Reaction

[0041] (1) Prepare ceramic powder: adjust the Zr / Ti ratio (0.56:0.53) in PZT to obtain a highly active PZT ceramic material at the quasi-isomorphic phase boundary (MPB), and use it to form a solid solution with it to adjust the molar ratio of PZN and PZT (0.4: 1) Make its fault tolerance factor 0.9-1.1; use MnO 2 , Sb 2 o 3 、Cr 2 o 3 Doping the ceramic powder of PZN-PZT, the doping amount accounts for 0.5wt% MnO of the total ceramic powder 2 , 0.9wt% Sb 2 o 3 and 0.1 wt% Cr 2 o 3 ;

[0042] (2) The ceramic powder is compressed under a pressure of 30MPa; the piezoelectric coefficient d is obtained 33 =425 PC / N, electromechanical coupling coefficient Kp=0.65, relative permittivity ε r =2314, mechanical quality factor Qm=508, dielectric loss tanδ=0.005, time stability and temperature stabilityτ of resonance frequency fr =90(10 -6 / ℃) ceramic sheet;

[0043] (3) Burning silver electrodes;

[00...

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Abstract

The invention relates to a production method of piezoelectric ceramic that comprises: PZN-PZT ceramic powder which adulterates MnO2, Sb2O and Cr2O3 is pressed under the 20-50MPa; The silver electrode is burnt; the ceramic piece is polarized at temperature of 50-200DEG C, electric field intensity of 500V / mm-3000V / mm for 20-40 minutes, it is burnt for 1-3 hours at temperature of 900-1240DEG C to form piezoelectric ceramic piece; Several piezoelectric ceramic pieces are folded to an integral, and down-lead upwards; it is encapsulated outer to construct the piezoelectric ceramic transformer. The step-up ratio is high that is about 2 times of overlay piezoelectric transformer of general material.

Description

technical field [0001] The invention relates to a manufacturing method of a piezoelectric ceramic transformer. Background technique [0002] As an integrated solid electronic transformer, the piezoelectric ceramic transformer can be said to be a combination of a driver and a sensor: electrical energy is converted into mechanical vibration energy through the inverse piezoelectric effect, and then converted into electrical energy through the positive piezoelectric effect. Impedance conversion is realized during the two conversions of energy, and a high voltage output is obtained at the resonant frequency of the ceramic. Compared with ordinary electromagnetic transformers, it has the advantages of small size, light weight, not afraid of high-voltage breakdown and short-circuit burning, moisture resistance, no noise, no copper and iron materials, and no electromagnetic interference. It is especially suitable for electronic circuits to be integrated and chip-shaped The requireme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/24H10N30/03
Inventor 刘彭义陈亚军叶勤唐振方
Owner JINAN UNIVERSITY
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