Method for growing R-surface sapphire crystal

A growth method, sapphire technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as unfavorable industrialization and slow growth speed

Inactive Publication Date: 2007-10-17
深圳市淼浩高新科技开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that the growth rate is sl

Method used

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  • Method for growing R-surface sapphire crystal
  • Method for growing R-surface sapphire crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Use a domestic single crystal furnace (such as manufactured by Xi'an University of Technology factory, with computer control, upper load cell), tungsten-molybdenum alloy crucible, medium frequency induction heating, zirconia insulation material, the specific configuration is shown in Figure 1.

[0026] The growth direction of R-face sapphire is [1120] direction, so the [1120] direction seed crystal is used.

[0027] Put 2,500 grams of sintered alumina into a crucible with a diameter of 100 mm, and vacuum up to 10 -2Pa was filled with hydrogen to 0.8atm. Heat up and melt, lower the seed rod to preheat the seed crystal, the seed crystal rotates at 30rpm, let the seed crystal touch the liquid surface of the melt, pull it at 2.5mm / hr after heat balance; close the neck and put the shoulder. After the crystal diameter is about 15mm, gradually reduce the pulling speed and rotation speed, respectively to 1.5mm / hr and 15rpm until the crystal diameter is 30mm, further gradually ...

Embodiment 2

[0034] The steps and equipment are the same as in Example 1, except that the seeding shouldering speed is gradually changed from 1.5 to 1.0 mm / hr, and the rotation speed is kept at 10 rpm. A high-quality R-face sapphire was obtained.

Embodiment 3

[0036] The steps and equipment are the same as in Example 1, except that the tungsten crucible and the tungsten crucible cover are used, the gas filled is nitrogen, the seeding shouldering speed is gradually changed from 1.5 to 1.0mm / hr, and the rotation speed is kept at 10rpm. Also obtain excellent quality R-plane sapphire, low dislocation density, low scattering, high structural integrity, optical uniformity Δn=9×10 -7 .

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Abstract

The present invention provides a process for upgrowth of R surface sapphire to develop crystal with synthetic fused mass method, wherein a czochralski method is adopted for seminationsowing, neck receiving and shoulder putting, and a kyropoulos method and/or temperature gradient technique is adopted during the equal-diameter growth. The equipments and the modes of heating used in the process are not restricted strictly, and a czochralski equipment is adopted usually, which can be used regardless induction heating or resistance heating. Said process possess the advantages of czochralski method, kyropoulos method and temperature gradient technique: it can develop crystal with large size without much pollution, wherein the liquid level and the instances of crystal growth can be observed; it can also adopt the existent czochralski method equipment. At the same time, the process overcomes the shortcomings (such as high color centre and location erroneous rate) of the czochralski method and the temperature gradient technique, can produce crystal with excellent quality, small stress, without slip band and twins defects, with low dislocation density, with excellent crystal perfection and optical homogeneity, easy to its industrialization.

Description

technical field [0001] The invention relates to crystal growth, in particular to a melt growth R-plane sapphire crystal, in particular to a comprehensive melt growth method combined with multiple growth methods such as pulling, kerosene and temperature gradient. technical background [0002] Gallium Nitride (GaN) is one of the most important new materials discovered by humans in the field of semiconductors after silicon single crystals, and it is a revolution in the fields of light sources, displays, and lighting. The most widely used GaN substrate material is sapphire crystal. [0003] The GaN epitaxial film prepared on sapphire is usually grown along the C axis, and the C axis is the polar axis of GaN, which leads to a strong built-in electric field in the quantum well of the active layer of the GaN-based device, which reduces the luminous efficiency. The development of non-polar surface epitaxy is expected to overcome this physical phenomenon and ...

Claims

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Application Information

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IPC IPC(8): C30B29/20
Inventor 陈盈君
Owner 深圳市淼浩高新科技开发有限公司
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