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Method for growing lithium aluminate crystal

A growth method, lithium aluminate technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve problems such as unfavorable industrialization and slow growth rate

Inactive Publication Date: 2007-10-17
深圳市淼浩高新科技开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantage is that the growth rate is slow, which is not conducive to industrialization

Method used

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  • Method for growing lithium aluminate crystal
  • Method for growing lithium aluminate crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Use a domestic single crystal furnace (such as manufactured by Xi'an University of Technology factory, with computer control, upper load cell), tungsten-molybdenum alloy crucible, medium frequency induction heating, zirconia insulation material, the specific configuration is shown in Figure 1.

[0024] In this example, a [001] oriented seed is used. Will Li 2 CO 3 and Al 2 o 3 According to the molar ratio of 1.02:1, the block obtained by mixing and sintering at 1000°C for 10 h was put into a crucible with a diameter of 100 mm, and the vacuum was evacuated for 10 -2After Pa, fill it with argon to 0.8atm. Heat up and melt, reduce the preheated seed crystal of the seed rod, the seed crystal rotates at 20rpm, let the seed crystal touch the melt surface, pull it at 1.5mm / hr after heat balance; close the neck and put the shoulder. After the crystal diameter is about 15mm, gradually reduce the pulling speed and rotation speed, respectively to 0.8mm / hr and 15rpm until the ...

Embodiment 2

[0030] The steps and equipment are the same as in Example 1, except that the seeding shouldering speed is gradually changed from 1.5 to 1.0 mm / hr, and the rotation speed is kept at 10 rpm. Lithium aluminate crystals of excellent quality were obtained.

Embodiment 3

[0032] The steps and equipment are the same as in Example 1, except that the tungsten crucible and tungsten crucible cover are used, the gas charged is nitrogen, the seeding shoulder speed is gradually changed from 1.5 to 1.0mm / hr, and the rotation speed is kept at 10rpm. Also obtain lithium aluminate crystals with excellent quality, low dislocation density, low scattering, high structural integrity, and optical uniformity Δn=9×10 -7 .

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Abstract

The present invention provides a process for upgrowth of lithium aluminate crystal to develop crystal with synthetic fused mass method, wherein a czochralski method is adopted for seminationsowing, neck receiving and shoulder putting, and a kyropoulos method and / or temperature gradient technique is adopted during the equal-diameter growth. The equipments and the modes of heating used in the process are not restricted strictly, and a czochralski equipment is adopted usually, which can be used regardless induction heating or resistance heating. Said process possess the advantages of czochralski method, kyropoulos method and temperature gradient technique: it can develop crystal with large size without much pollution, wherein the liquid level and the instances of crystal growth can be observed; it can also adopt the existent czochralski method equipment. At the same time, the process overcomes the shortcomings (such as high color centre and location erroneous rate) of the czochralski method and the temperature gradient technique, can produce crystal with excellent quality, small stress, without slip band and twins defects, with low dislocation density, with excellent crystal perfection and optical homogeneity, easy to its industrialization.

Description

technical field [0001] The invention relates to crystal growth, in particular to a melt growth lithium aluminate crystal, in particular to a comprehensive melt growth method combined with various growth methods such as pulling, kerosene and temperature gradient. technical background [0002] Gallium Nitride (GaN) is one of the most important new materials discovered by humans in the field of semiconductors after silicon single crystals, and it is a revolution in the fields of light sources, displays, and lighting. Currently the most widely used GaN substrate material is sapphire (Al 2 o 3 ) and GaN have a lattice mismatch rate as high as 13.6%. [0003] Although the matching between the epitaxial film and the substrate can be improved through the buffer layer, this serious lattice mismatch will still lead to the generation of high-density defects in the epitaxial film, which will greatly reduce the life and performance of the device. Although the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B15/00
Inventor 陈盈君
Owner 深圳市淼浩高新科技开发有限公司
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