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Making method of self-limited boundary film graphics

A technology of thin film graphics and boundaries, which is applied in the direction of conductive pattern formation, printed circuit manufacturing, semiconductor/solid-state device manufacturing, etc., can solve problems affecting the uniformity and flatness of thin film, performance degradation of thin film devices, and uneven film thickness, etc., to achieve Good smoothness and uniformity

Inactive Publication Date: 2007-10-17
SINOFLEX OPTOELECTRONICS CHUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, one of the main disadvantages of inkjet printing technology at present is that the formed film is prone to coffee ring effect during the preparation process, that is, due to the volatilization of the liquid, the surface morphology with thick edges and thin middle is formed, resulting in a thin film. Thick unevenness and defects
This shortcoming affects the uniformity and flatness of the film formed by inkjet printing to a large extent, and further causes the possibility of performance degradation or defects in the prepared thin film device.

Method used

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  • Making method of self-limited boundary film graphics
  • Making method of self-limited boundary film graphics
  • Making method of self-limited boundary film graphics

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Embodiment 1

[0029] Embodiment 1: Please refer to the flow charts in Fig. 2(a) to Fig. 2(e).

[0030] First, as shown in FIG. 2( a ), a glass substrate 100 is provided and cleaned with deionized water, and a polymethyl methacrylate (PMMA) barrier layer 110 is preferably formed on the glass substrate 100 . The method for forming the PMMA barrier layer 110 may be spin coating or spinless coating. The silver nanoparticles are then dispersed in an acetone solvent to form a suspension 130 .

[0031] Then, please refer to shown in Figure 2 (b), the suspension 130 of silver nanoparticles is deposited on the top of the PMMA barrier layer 110, and patterning is carried out according to the prior design when depositing, here is a circular conductive pattern film 120 . The method of forming the conductive thin film layer 120 may be inkjet printing, or other wet film forming methods. Next, please refer to shown in Figure 2 (c), when the silver nano-suspension 130 is deposited on the top of the PMMA...

Embodiment 2

[0032] Embodiment 2, please also refer to the flowcharts of FIG. 2(a) to FIG. 2(e).

[0033] First, please refer to FIG. 2( a ), a glass substrate 100 is provided and cleaned with deionized water. A polyimide (PI) barrier layer 110 is formed on the glass substrate 100 , and the method for forming the barrier layer 110 may be spin coating (Spin Coating) or non-spin coating (Spinless Coating). The silver nanoparticles are then dispersed in a chloroform solvent to form a suspension 130 . Then, as shown in FIG. 2( b ), the suspension 130 of silver nanoparticles is deposited on the polyimide barrier layer 110 , and is patterned according to the prior design during deposition, which is a rectangle here. The method of forming the rectangular conductive thin film layer 120 may be inkjet printing, or other wet film forming methods.

[0034] Then please refer to Fig. 2 (c), when the silver nano-suspension 130 is deposited on the top of the polyimide barrier layer of the glass substrat...

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Abstract

The invention belongs a thin film producing technic field, in particular, a boundary slef-restriction thin film producing method. The method comprises steps of firstly forming an obstructing layer on a glass or plastic substrate, forming a thin film above the obstructing layer by using a solution or a suspension of a film forming material of the obstructing layer having solubility or dispersibility and by a printing method, etc., forming a boundary at edges of a film-forming region by a self-bank effect, then performing anneal process on the substrate based on request, and removing the obstructing layer. The formed boundary slef-restriction thin film has a continuous boundary and a good film thickness uniformity. The produced thin film can be used in a printed circuit board (PCB), an organic light emitting diode (OLED), an organic field effect tube (OFET), a color filer (CF), a micro-lens, etc.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and in particular relates to a thin film preparation method which can be patterned and has a uniform surface, in particular to a thin film pattern preparation method with self-limited boundaries. Background technique [0002] At present, the traditional thin film preparation technologies are generally widely used in the industry, such as vacuum coating, photolithography, ion beam etching, screen printing, chemical vapor deposition (CVD) and other methods. However, in addition to screen printing with low precision, in order to prepare ultra-fine films, existing methods such as photolithography and ion beam etching have disadvantages such as high cost, complicated steps, and poor flexibility. Therefore, many companies and research institutions are trying to find new technologies for preparing high-performance and ultra-fine thin-film devices to adapt to organic light-emitting diodes (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/288H01L21/3205H01L21/768H01L51/00H01L51/40H01L51/56H05K3/00H05K3/10G02B3/00G02B5/20H10K99/00
Inventor 许军富春
Owner SINOFLEX OPTOELECTRONICS CHUZHOU
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