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Light beam conversion shaping device for high power semiconductor laser array

A technology of beam shaping and beam conversion, which is applied in the direction of semiconductor laser devices, semiconductor lasers, laser devices, etc., can solve problems such as high cost, difficulty in design and production, and complex structure of micro-optical components, so as to achieve simple production and easy processing , low cost effect

Inactive Publication Date: 2007-10-17
BEIJING GK LASER TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complex structure of micro-optical elements, it is very difficult to design and manufacture, and the cost is very high, which is not suitable for mass production.

Method used

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  • Light beam conversion shaping device for high power semiconductor laser array
  • Light beam conversion shaping device for high power semiconductor laser array
  • Light beam conversion shaping device for high power semiconductor laser array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Referring to Fig. 1a and Fig. 1b, in the beam propagation direction of semiconductor semiconductor laser array 1, cylindrical lens 2 is placed in sequence, the input surface of cylindrical lens 2 is close to the output end of semiconductor laser array 1, and the output surface of cylindrical lens 2 is close to optical fiber array The input surface of the row 3, the output surface of the fiber array row 3 is close to the plane of the first cylindrical mirror 4, the cylindrical surface of the first cylindrical mirror 4 is close to the cylindrical surface of the second cylindrical mirror 5, and the second cylindrical mirror 5 The plane of the third cylindrical mirror 6 is close to the cylindrical surface of the third cylindrical mirror 6, and the plane of the third cylindrical mirror 6 is close to the input surface of the optical fiber 7.

[0025] The optical fiber array row 3 of this embodiment is made up of several silica optical fibers of the same diameter. In this embod...

Embodiment 2

[0028] The structure of the device made in this embodiment is the same as that of Example 1, wherein the optical fiber array row 3 is composed of several silica optical fibers with the same diameter, and 24 or 40 220 μm or 250 μm or 355 μm optical fibers can be used. The optical fiber array row 3 With respect to the cylindrical lens 2, the arrangement period is 500 μm at an angle of 45 degrees. Other parameters are the same as in Example 1.

Embodiment 3

[0030]The structure of the device produced in this embodiment is the same as that of Embodiment 1, wherein the optical fiber array row 3 can be composed of several glass filaments of the same diameter, and each glass filament in the optical fiber array row 3 is arranged at an angle of 45 degrees relative to the cylindrical lens 2. Other parameters are the same as in Example 1.

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Abstract

The invention relates to a light beam switching device of high power semiconductor laser array beam shaping, including: a cylindrical lens, an optical fiber array row, a first cylindrical lens, a second cylindrical lens, a third cylindrical lens and optical fibers placed in turn on the output light direction of the laser array. The invention adopts a light beam switching device structure with an optical fiber array row of a 45-degree obliquity, which sloves the problem of a low coupling efficiency and being very difficult to design and produce, thus making design and production relatively simple and convenient. The invention designs a new type of relatively simple micro-optical system to ensure high coupling efficiency. The invention achieve to resolve the batch process problem on the basis of ensuring a high output power, high brightness and high quality beam, so that the semiconductor laser array beam shaping production is simple, easy to adjust, and low cost. Accordingly, the invention will provide a device for the beam direction conversion and beam shaping of an high-power diode laser array.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to a beam conversion and shaping device for high-power semiconductor laser arrays. Background technique [0002] Due to the advantages of small size, light weight, long life and high power, semiconductor laser arrays have broad application prospects and huge potential markets in the fields of military, public security, industry and medical treatment, and thus have become a research hotspot pursued by countries all over the world. . However, due to the inherent structural defects of the semiconductor laser array, the output beam quality of each light-emitting unit is very poor. The specific performance is that the divergence angle of each light-emitting unit in the direction perpendicular to the p-n junction (fast axis) is 30°-40°, parallel to The divergence angle of the p-n junction direction (slow axis) is 7°-10°. Due to the different divergence angles and severe astigmatism i...

Claims

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Application Information

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IPC IPC(8): H01S5/40H01S5/06H01S5/00G02B6/00G02B6/24G02F1/35
Inventor 樊仲维李丽娜王培峰牛岗林梓甡
Owner BEIJING GK LASER TECH
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