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High heat conductivity silicon nitride ceramics material and preparation method thereof

A silicon nitride ceramic, high thermal conductivity technology, applied in the field of inorganic non-metallic materials, can solve problems such as difficulty in sintering, and achieve the effects of high thermal conductivity, improved thermal conductivity, and improved flexural strength

Inactive Publication Date: 2010-06-09
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using MgSiN 2 Although replacing MgO can improve thermal conductivity, however, due to MgSiN 2 Can't mix with SiO like MgO 2 The reaction forms a low-viscosity grain boundary phase, which is difficult to sinter

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0020] The invention provides a silicon nitride ceramic material with high thermal conductivity and a preparation method thereof. Adding rare earth fluoride YF to silicon nitride powder 3 and alkaline earth metal oxide MgO, after ball milling, drying, crushing, and sieving processes to obtain a uniformly mixed composite powder, and then use the HIGH-MULTI5000 multifunctional sintering furnace produced by Fuji Denpa Corporation in Japan at 1800 ° C and 0.1 MPa Hot-press sintering under a nitrogen atmosphere and an axial pressure of 0.3t for 1 hour, then raise the temperature to 1900°C, and sinter under a nitrogen pressure of 1 MPa for 3 hours under normal pressure to prepare the high thermal conductivity, high-strength silicon nitride ceramics of the present invention .

[0021] Rare earth oxides can purify crystal grains and promote the growth of silicon nitride columnar crystals during the sintering process of silicon nitride ceramics, and the research of the present inventi...

Embodiment 1

[0037] Embodiment 1 adds 5wt% YF in silicon nitride powder 3 and 3wt% MgO as a sintering aid, adding alcohol and ball milling and mixing for 24 hours, drying and grinding, and passing through an 80-mesh sieve to obtain a uniformly mixed composite powder. Put the powder into a graphite mold, and prepare silicon nitride ceramics according to the above-mentioned sintering process.

[0038] The relative density of the obtained silicon nitride ceramics is 99.6%, and it can be detected from its structure that it contains silicon nitride grains and MgY 4 Si 3 o 13 The grain boundary phase has a thermal conductivity of 97W / mK, a bending strength of 848MPa, a Vickers hardness of 19GPa, a dielectric constant of 8.4, and a dielectric loss of 1×10 -3 , the volume resistivity is 1.2×10 13 Ω·m.

Embodiment 2

[0039] Example 2 is basically the same as Example 1 except that the added amount of MgO is 2wt%.

[0040] The relative density of the obtained silicon nitride ceramics is 99.5%, and it can be detected from its structure that it contains silicon nitride grains and MgY 4 Si 3 o 13 The grain boundary phase has a thermal conductivity of 89W / mK, a flexural strength of 722MPa, a Vickers hardness of 19GPa, a dielectric constant of 8.9, and a dielectric loss of 7×10 -4 , the volume resistivity is 1.2×10 13 Ω·m.

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PUM

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Abstract

This invention discloses a ceramic material of silicon nitride with high heat conductivity, and its preparation method. Due to the use of rare element fluoride YF3 is substituted for rare elements oxides as agglutinant, and due to the adding of alkaline metal oxide MgO, to lower the molten temperature and viscosity of the glass phase produced during sintering, so to lower the sintering temperatureto make the crystal boundary bing crystallization, to increase heat conductivity of this invention product being higher than that of prior art product by 14%, and bending strength by 9%. This invention has important value in commercial application.

Description

technical field [0001] The invention belongs to the field of inorganic non-metallic materials, in particular to a silicon nitride ceramic material with high thermal conductivity and a preparation method thereof. Background technique [0002] As the power of power electronic devices represented by IGBT continues to increase, heat dissipation has become a factor restricting its further development. As the carrier of electronic devices, ceramic circuit substrates are directly in contact with semiconductor chips. Improving their thermal conductivity or reducing the thickness of packaging materials is a prerequisite for solving the heat dissipation problem of electronic devices, and the use of high thermal conductivity and high strength ceramic materials is the key. In addition, as energy and environmental issues become increasingly prominent, various electric vehicles such as electric vehicles, hybrid vehicles, and fuel cell vehicles emerge as the times require, requiring the us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/645
Inventor 宁晓山张洁滕甫
Owner TSINGHUA UNIV