Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric conversion device and its making method and electrode

A photoelectric conversion device and manufacturing method technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of lower photoelectric conversion efficiency, high series resistance, and process fragmentation, so as to improve photoelectric conversion efficiency, reduce series resistance, reduce The effect of warping

Inactive Publication Date: 2008-02-13
NEO SOLAR POWER CORP
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing metal electrode pair 13 is usually formed on the p-n semiconductor 11 by printing or vapor deposition with materials such as silver paste or silver-aluminum paste, and then sintered at high temperature. The difference in thermal expansion coefficient between the material and the silicon material is too large, so that the solar cell 1 will warp during the sintering process, and this phenomenon is more significant when the silicon substrate 10 is thinned, resulting in fragmentation in the subsequent process. Possibility; In addition, in order to increase the light transmittance of the light-incident surface, the finger-inserted design of the electrode causes the series resistance of the solar cell 1 to be too high, which reduces the photoelectric conversion efficiency
[0006] It can be seen that the above-mentioned existing photoelectric conversion device and its manufacturing method and electrodes obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general products do not have a suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric conversion device and its making method and electrode
  • Photoelectric conversion device and its making method and electrode
  • Photoelectric conversion device and its making method and electrode

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0049] Please refer to FIG. 2 , the photoelectric conversion device 2 according to the first embodiment of the present invention includes a photoelectric conversion element 21 and an electrode pair 22 .

[0050] The photoelectric conversion element 21 includes a first semiconductor layer 211 and a second semiconductor layer 212, wherein the first semiconductor layer 211 and the second semiconductor layer 212 are connected to each other to form a junction, as light energy generates electron / hole pairs Separation. As shown in Figure 2, in this embodiment, the first semiconductor layer 211 is a p-type semiconductor, and the second semiconductor layer 212 is an n-type semiconductor, of course, the first semiconductor layer 211 can also be an n-type semiconductor. semiconductor, and the second semiconductor layer 212 is a p-type semiconductor, wherein the dopant of the p-type semiconductor can be, for example, boron (boron) and gallium (gallium), etc., and the dopant of the n-type ...

no. 2 example

[0057] Please refer to FIG. 5, an electrode 20 for a photoelectric conversion device according to a second embodiment of the present invention is characterized in that: its coefficient of thermal expansion is between 5×10 -7 / °C to 1×10 -5 / °C.

[0058] In this embodiment, the photoelectric conversion device 2 includes a first semiconductor layer 211 and a second semiconductor layer 212, and the first semiconductor layer 211 and the second semiconductor layer 212 are connected to each other to form a junction. The material, structural features and functional features of the photoelectric conversion device 2 are as described in the first embodiment, so they will not be repeated here.

[0059] The electrode 20 of this embodiment is connected to the first semiconductor layer 211 or the second semiconductor layer 212, and its material can be selected from at least tin oxide, indium tin oxide, aluminum zinc oxide, indium zinc oxide and diamond-like film. One of them is a transpar...

no. 3 example

[0061] Please refer to FIG. 6, a method for manufacturing a photoelectric conversion device according to a third embodiment of the present invention includes the following steps: In step S1, a second semiconductor layer is formed on a first semiconductor layer, and In step S2, coating a first electrode on the first semiconductor layer and coating a second electrode on the second semiconductor layer, so that the first electrode and the second electrode are respectively connected to the first semiconductor layer and the second semiconductor layer, wherein The coefficient of thermal expansion of the first electrode is between 5 x 10 -7 / °C to 1×10 -5 / °C.

[0062] Before step S1, the first semiconductor layer is formed by doping a silicon wafer by diffusion method or ion implantation method, and the thickness range of the first semiconductor layer is 60 μm to 300 μm. Here, the first semiconductor layer can be A p-type semiconductor or an n-type semiconductor. Wherein the dopan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photoelectric conversion device and the manufacturing method and the electrode. The photoelectric conversion device comprises a photoelectric conversion element and an electrode pair. The photoelectric conversion element comprises a first semi-conductor layer and a second semi-conductor layer. The first semi-conductor layer and the second semi-conductor layer are mutually connected. The electrode pair comprises a first electrode and a second electrode. The first electrode and the first semi-conductor layer are connected with each other. The second electrode and the second semi-conductor layer are connected with each other. The coefficient of thermal expansion of the first electrode is between 5*10-7 / DEG C to 1*10-5 / DEG C.

Description

technical field [0001] The invention relates to a conversion device, a manufacturing method thereof, and an electrode, in particular to a photoelectric conversion device, a manufacturing method thereof, and an electrode. Background technique [0002] With the gradual shortage of energy resources on the earth, the development of new energy has become one of the focuses of the technology industry and industry, and alternative energy products such as solar cells have become one of the targets of development. A solar cell is a photoelectric conversion device that converts light energy into electrical energy by using the photovoltaic effect, that is, using a p-n diode (ie, a diode) to absorb light energy to generate free electrons and holes, which are connected at the junction of the p-n diode Driven by the nearby built-in electric field, the free electrons move to the n-type semiconductor, and the free holes move to the p-type semiconductor, thereby generating a current, and fin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04H01L31/0224H01L31/18
CPCY02E10/50Y02P70/50
Inventor 洪传献许国强陈楷林李慧平赖明雄溫志中林坤禧
Owner NEO SOLAR POWER CORP