A non-crystal sold film material Ag1-x-yGexSey and making method and its application

A thin-film material and amorphous technology, applied in metal material coating technology, static memory, ion implantation plating, etc., can solve the problems of complex structure, low access speed, large volume, etc., and achieve simple and simplified component structure The effect of production process and small device size

Inactive Publication Date: 2008-02-13
NANJING UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional non-volatile memory is mainly magnetic memory, and its main disadvantage is that writing and reading must rely on mechanically moving parts such as magnetic heads, so the access speed is very low and the volume is large, and the recording density is difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A non-crystal sold film material Ag1-x-yGexSey and making method and its application
  • A non-crystal sold film material Ag1-x-yGexSey and making method and its application
  • A non-crystal sold film material Ag1-x-yGexSey and making method and its application

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0060] Embodiment 1. The preparation method of solid electrolyte amorphous AGS thin film material used to prepare non-volatile phase change memory element, the preparation steps are as follows:

[0061] (1) AGS alloy target (9) is made by suspension smelting cold crucible equipment: the ratio of Ag, Ge, Se mixture is 33% mol Ag, 20% molGe and 47% molSe, and the ratio is good when melting at 600℃. The mixture of Ge and Ge forms an alloy, and then the silver-germanium alloy and Se are continuously smelted at 500° C. to form a block, and the obtained block is polished and cut into a circular target.

[0062] (2) Fix the AGS target (9) on the target stage (10) of the pulsed laser deposition film forming system, the substrate (6) on the substrate stage (13), and the resistance heating furnace (15) on the substrate Below the stage (13), they are all placed in the growth chamber (11) of the pulsed laser deposition film-making system;

[0063] (3) Vacuum the growth chamber (11) to 5×10 th...

Example Embodiment

[0067] Embodiment 2. The preparation method of the non-volatile phase change memory device based on the solid electrolyte amorphous AGS film, the preparation steps are as follows:

[0068] (1) The non-reactive electrode film 2 is deposited on the silicon wafer substrate 1 by a pulsed laser deposition method, the material of which is platinum, and the thickness of the non-reactive electrode film 2 is 200 nanometers;

[0069] (2) A layer of insulating layer 3 is deposited on the non-reactive electrode film 2 by means of radio frequency magnetron sputtering, the material of the insulating layer is silicon dioxide, and its thickness is 100 nanometers;

[0070] (3) Using focused particle beam etching in the insulating layer 2 to process micro holes with a diameter of 100 nanometers, exposing the lower non-reactive electrode film 2;

[0071] (4) Cover the substrate on which the micro-holes 5 are processed with a metal mask engraved with a hole with a diameter of 0.5 mm, and the holes of...

Example Embodiment

[0076] Embodiment 3. The preparation method of the non-volatile phase change memory device based on the solid electrolyte amorphous AGS film, the specific preparation steps are as follows:

[0077] (1) A layer of insulating layer 2 is deposited on the high-conductivity silicon substrate 2 by radio frequency magnetron sputtering. The material of the insulating layer is silicon dioxide with a thickness of 200 nanometers. A silicon dioxide ceramic target is used during sputtering. , Use argon gas with a pressure of 10 Pa as the sputtering gas, and the low temperature of the lining is 80 ℃;

[0078] (2) Using focused ion beam etching to process micro-holes with a diameter of 1 micron in the insulating layer 3, exposing the lower high-conductivity silicon non-reactive electrode 2;

[0079] (3) Cover the substrate on which the micro-holes are processed with a metal mask engraved with holes with a diameter of 0.4 mm, and the holes of the mask are aligned with the micro-holes 5;

[0080] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation for a phase-transition memory material of amorphous thin film Ag1-x-yGexSey, wherein, x is less than 0.3 and more than 0.1, y is less than 0.60 and more than 0.38, x and y are atomic ratio, AGS for short. Based on the resistance switching effect, a non-volatile phase-transition memory is designed and prepared. The memory comprises totally five layers, a layer of non-reactive electrode (2, platinum or high-conductivity silicon) is deposited on the surface of the substrate (1), an insulating and barrier layer (3, silicon dioxide) is deposited on the non-reactive electrode (2), meanwhile a millipore is etched at the middle part, the diameter of the millipore decides the component size, a AGS thin film layer (4) is deposited on the insulating layer (3), and finally a reactive electrode (5, Ag) is deposited on the film surface. The phase-transition memory has the advantages of small size, simple structure, non-volatility, fast reading and writing, low operating voltage, low power consumption, high writable times and non-destructive read out.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and materials thereof, and specifically relates to a material and a preparation method of a novel non-volatile high-density storage device capable of fast reading and writing, which are applied to information storage. Background technique [0002] Non-volatile memory is one of the most important and widely used memory. The traditional non-volatile memory is mainly magnetic memory. Its main disadvantage is that writing and reading must rely on mechanically moving parts such as magnetic heads. Therefore, the access speed is very low and the volume is large, and the recording density is difficult to further increase. In recent years, people have developed magnetic random access memory (M-RAM) relying on spintronic materials. It needs to introduce a magnetic field in the process of reading and writing, and its structure is complex. It has not yet been put into the market. Recently, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00G11C11/56C22C45/00C23C14/06C23C14/22
Inventor 刘治国陈亮尹奎波国洪轩殷江
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap