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Method for enhancing chip brightness

A chip and brightness technology, which is applied in the field of improving chip brightness and roughening the surface of the chip substrate to improve the brightness of the chip, so as to achieve the effect of improving the external quantum efficiency, improving the total reflection problem, and improving the light extraction efficiency

Inactive Publication Date: 2008-03-12
上海蓝宝光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for the luminous efficiency, because the substrate of the flip chip 8 is very smooth, the light loss due to total reflection accounts for about 50%. Currently, the luminous efficiency of the chip produced by the flip chip technology can only reach 20 to 30 at most. Lumens / Watt, still some distance away from lighting

Method used

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  • Method for enhancing chip brightness
  • Method for enhancing chip brightness
  • Method for enhancing chip brightness

Examples

Experimental program
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Embodiment 1

[0021] As shown in Figure 3, it is a schematic diagram of making a photonic crystal structure on the surface of the substrate in Example 1, a method for improving the brightness of the chip, the electrodes of the flip chip 8 are bonded to the silicon heat sink chip 9, and it is characterized in that Make photonic crystal on the surface 11 of the sapphire substrate 10 of packing welding chip 8, its method is:

[0022] (1) First paste a layer of 0.2 micron-0.8 micron thick silicon dioxide or silicon nitride protective film layer on the surface 11 of the sapphire substrate 10 of the flip chip 8;

[0023] (2) coating photoresist on protective film layer then, photoresist is exposed with laser exposure machine;

[0024] (3) Under the protection of the photoresist, the silicon dioxide or silicon nitride protective film layer is etched by an inductively coupled reactive ion etching machine using chlorine gas to form a photonic crystal structure 13 on the surface of the sapphire subst...

Embodiment 2

[0027] As shown in Figure 4, for embodiment 2, make photonic crystal structure schematic diagram on substrate surface and transparent electrode surface, make photonic crystal simultaneously on the surface 11 of the sapphire substrate 10 of flip chip 8 and on the surface of transparent electrode 12 Structure, using steps 1, 2 and 3 to form a photonic crystal structure on the surface 11 of the sapphire substrate 10:

[0028] First, apply a photoresist on the surface of the transparent electrode indium tin oxide (ITO) 12 of the flip chip 9, and use a laser exposure machine (Nano Engineering Optical System) to expose the photoresist, and after development, the photoresist is obtained as shown in Figure 5 Or pattern as shown in Figure 6; Under the protection of photoresist, etch transparent electrode indium tin oxide (ITO) 12 by inductively coupled reactive ion etching machine (ICP-RIE), obtain photonic crystal as shown in Figure 5 or As shown in Figure 6. The effect of forming a ...

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Abstract

The invention relates to a method for lighting up the chip to adhere the electrode of the backbonded chip with the silicon heat sinking chip, which is characterized in making photonic crystal structure of the light dipping surface (sapphire underlay) of the backbonded chip and the surface of the transparency electrode tin indium oxide. The photonic crystal structure is helpful to decrease perfect reflection and light up the dipping bright, by which the light extraction can be improved to 50% to 90% to obtain the brightness of 90% more than the normal backbonded chip under the driving by the current of 350 milliampere.

Description

technical field [0001] The invention relates to a method for improving the brightness of a chip, in particular to a method for roughening the surface of a chip substrate so as to improve the brightness of the chip, which belongs to the technical field of chips. Background technique [0002] The so-called light-emitting diode (LED) is a P / N diode made of a semiconductor material with a direct energy gap. Under the condition of thermal equilibrium, most of the electrons do not have enough energy to jump to the conduction band. Then apply a forward pressure, the electrons will jump to the conduction band, and the original position of the electrons on the original price bond band will generate holes. Under proper bias voltage, electrons and holes will combine in the P / N interface area (P-N Juction) to emit light, and the current of the power supply will continuously replenish electrons and holes to N-type semiconductors and P-type semiconductors, making electrons, The hole is c...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 冯雅清叶国光梁伏波朱思远黄力伟
Owner 上海蓝宝光电材料有限公司